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EP About this file: EP1751805

EP1751805 - ARTIFICIAL AMORPHOUS SEMICONDUCTORS AND APPLICATIONS TO SOLAR CELLS [Right-click to bookmark this link]
Status	The application has been refused Status updated on 18.09.2009 Database last updated on 24.04.2024
Most recent event Tooltip	18.09.2009	Refusal of application	published on 21.10.2009 [2009/43]
Applicant(s)	For all designated states NEWSOUTH INNOVATIONS PTY LIMITED Rupert Myers Building Level 2, Gate 14, Barker Street, UNSW Sydney, NSW 2052 / AU
	[N/P]
Former [2007/07]	For all designated states NEWSOUTH INNOVATIONS PTY LIMITED Rupert Myers Building Level 2, Gate 14, Barker Street, UNSW Sydney, NSW 2052 / AU
Inventor(s)	01 / GREEN, Martin Andrew, Photovoltaics Spe. Res. C. School of Electronics, UNSW Sydney, NSW 2052 / AU
	[2007/07]
Representative(s)	Maiwald, Walter Maiwald GmbH Elisenhof Elisenstraße 3 80335 München / DE
	[N/P]
Former [2008/39]	Maiwald, Walter Maiwald Patentanwalts GmbH Elisenhof Elisenstrasse 3 80335 München / DE
Former [2007/07]	Maiwald, Walter Maiwald Patentanwalts GmbH Elisenhof Elisenstrasse 3 D-80335 München / DE
Application number, filing date	05735944.0	29.04.2005
	[2007/07]
	WO2005AU00614
Priority number, date	AU20040902299	30.04.2004 Original published format: AU 2004902299
	[2007/07]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO2005106966
	Date:	10.11.2005
	Language:	EN
	[2005/45]
	Type:	A1 Application with search report
	No.:	EP1751805
	Date:	14.02.2007
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 10.11.2005 takes the place of the publication of the European patent application.
	[2007/07]
Search report(s)	International search report - published on:	AU	10.11.2005
	(Supplementary) European search report - dispatched on:	EP	01.06.2007
Classification	IPC:	H01L31/0352, H01L29/12, H01L21/20, H01L31/0224, H01L31/18, H01L31/068, H01L31/0384	[2007/24]
	CPC:	H01L31/035236 (EP,US); B82Y10/00 (EP,US); B82Y20/00 (EP,US); H01L29/127 (EP,US); H01L31/022425 (EP,US); H01L31/0384 (EP,US); (+) H01L31/0687 (EP,US); H01L31/1804 (EP,US); H01L31/1812 (EP,US); Y02E10/544 (EP,US); Y02E10/547 (EP,US); Y02P70/50 (EP,US) (-)
	Former IPC [2007/07]	H01L31/0264, H01L29/15, H01L21/36
Designated contracting states	AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, MC, NL, PL, PT, RO, SE, SI, SK, TR [2007/07]
Extension states	AL	Not yet paid
	BA	Not yet paid
	HR	Not yet paid
	LV	Not yet paid
	MK	Not yet paid
	YU	Not yet paid
Title	German:	KÜNSTLICHE AMORPHE HALBLEITER UND ANWENDUNGEN AUF SOLARZELLEN	[2007/07]
	English:	ARTIFICIAL AMORPHOUS SEMICONDUCTORS AND APPLICATIONS TO SOLAR CELLS	[2007/07]
	French:	SEMI-CONDUCTEURS AMORPHES ARTIFICIELS ET APPLICATIONS A DES CELLULES SOLAIRES	[2007/07]
Entry into regional phase	29.11.2006	National basic fee paid
	29.11.2006	Search fee paid
	29.11.2006	Designation fee(s) paid
	29.11.2006	Examination fee paid
Examination procedure	29.11.2006	Amendment by applicant (claims and/or description)
	29.11.2006	Examination requested [2007/07]
	22.08.2007	Despatch of a communication from the examining division (Time limit: M06)
	30.01.2008	Reply to a communication from the examining division
	15.02.2008	Despatch of a communication from the examining division (Time limit: M04)
	17.06.2008	Reply to a communication from the examining division
	23.04.2009	Date of oral proceedings
	04.06.2009	Despatch of communication that the application is refused, reason: substantive examination [2009/43]
	14.06.2009	Application refused, date of legal effect [2009/43]
Fees paid	Renewal fee
	29.11.2006	Renewal fee patent year 03
	28.03.2008	Renewal fee patent year 04
	Penalty fee
	Additional fee for renewal fee
	30.04.2009	05 M06 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[XA]EP1134799 (ST MICROELECTRONICS SRL [IT]) [X] 9,10 * abstract * * paragraph [0038] * [A] 1-8;
		[XY]DE10104193 (MAX PLANCK GESELLSCHAFT [DE]) [X] 1,9,10 * abstract * * paragraphs [0044] , [0045] * [Y] 2-8,11-16;
		[A]WO03034113 (NKT RES & INNOVATION AS [DK], et al) [A] 1-16 * abstract *;
		[Y] - DAS B ET AL, "LOW-COST, HIGH EFFICIENCY MULTIJUNCTION PHOTOVOLTAIC CELLS BASED ONSEMICONDUCTOR NANOSTRUCTURES", PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM PHOTOVOLTAICS FOR THE 21ST CENTURY. SEATTLE, WA, ELECTROCHEMICAL SOCIETY PROCEEDINGS VOL. 99-11, PENNINGTON,NJ : ELECTROCHEMICAL SOC, US, MEETING 195, (199905), ISBN 1-56677-233-8, pages 97 - 102, XP000994067 [Y] 2-8,11-16 * the whole document *
		[X] - MAX-PLANCK-GESELLSCHAFT, "Technologischer Durchbruch für die Silizium-Photonik", PRESSEINFORMATION, (20030721), URL: http://www.maxplanck.de/bilderBerichteDokumente/dokumentation/pressemitteilungen/2003/pressemitteilung200307211/index.html, (20070503), XP002432608 [X] 1,9,10 * the whole document *
		[X] - TSYBESKOV L ET AL, "Nanocrystalline-silicon superlattice produced by controlled recrystallization", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (19980105), vol. 72, no. 1, ISSN 0003-6951, pages 43 - 45, XP012019733 [X] 1,9,10 * the whole document * DOI: http://dx.doi.org/10.1063/1.120640
		[X] - ZACHARIAS M ET AL, "Size-controlled highly luminescent silicon nanocrystals: A SiO/SiO2 superlattice approach", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (20020128), vol. 80, no. 4, ISSN 0003-6951, pages 661 - 663, XP012031410 [X] 1,9,10 * the whole document * DOI: http://dx.doi.org/10.1063/1.1433906
		[X] - YI L X ET AL, "Si rings, Si clusters, and Si nanocrystals-different states of ultrathin SiOx layers", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (20021125), vol. 81, no. 22, ISSN 0003-6951, pages 4248 - 4250, XP012032658 [X] 1,9,10 * the whole document * DOI: http://dx.doi.org/10.1063/1.1525051
		[X] - HIRANO Y ET AL, "Photoconductive properties of nanometer-sized Si dot multilayers", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (20011001), vol. 79, no. 14, ISSN 0003-6951, pages 2255 - 2257, XP012029054 [X] 1,9,10 * the whole document * DOI: http://dx.doi.org/10.1063/1.1408600
		[X] - KONLE J ET AL, "Enhanced performance of silicon based photodetectors using silicon/germanium nanostructures", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, (200111), vol. 45, no. 11, ISSN 0038-1101, pages 1921 - 1925, XP004308900 [X] 9,10 * the whole document * DOI: http://dx.doi.org/10.1016/S0038-1101(01)00234-9
		[A] - GUHA S, "Material and device consideration for high efficiency a-Si alloy-based multijunction cells", JOURNAL OF NON-CRYSTALLINE SOLIDS, NORTH-HOLLAND PUBLISHING COMPANY, AMSTERDAM, NL, (199605), vol. 198-200, ISSN 0022-3093, pages 1076 - 1080, XP004243196 [A] 3-8,11,16 * the whole document * DOI: http://dx.doi.org/10.1016/0022-3093(96)00047-6
		[A] - ZACHARIAS M ET AL, "FORMATION OF GE NANOCRYSTALS IN AMORPHOUS GEOX AND SIGEOX ALLOY FILMS", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, (19960515), vol. 278, no. 1/2, ISSN 0040-6090, pages 32 - 36, XP000637214 [A] 1-16 * the whole document * DOI: http://dx.doi.org/10.1016/0040-6090(95)08133-X
		[A] - ZACHARIAS M ET AL, "A comparative study of Ge nanocrystals in SixGeyOz alloys and SiOx/GeOy multilayers", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (19970301), vol. 81, no. 5, ISSN 0021-8979, page 2384, XP012041673 [A] 1-16 * the whole document * DOI: http://dx.doi.org/10.1063/1.364242
		[A] - LIANG Y ET AL, "THE MECHANISM OF FORMATION AND PHOTOLUMINESCENCE OF SI QUANTUM DOTS EMBEDDED IN AMORPHOUS SIO2 MATRIX", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, (20000508), vol. 4086, ISSN 0277-786X, pages 174 - 177, XP001069758 [A] 1-16 * the whole document * DOI: http://dx.doi.org/10.1117/12.408423
	International search	[XP]US2004234745 (CHANG TING-CHANG [TW], et al);
		[XP]US2004219750 (CHANG TING-CHANG [TW], et al);
		[X]US2004126582 (NG KWOK [US], et al);
		[XP]US2004092125 (KIM YOUNG-HO [KR], et al);
		[X]US2002153522 (PARK NAE MAN [KR], et al);
		[X]WO9950916 (MASSACHUSETTS INST TECHNOLOGY [US], et al)
	Examination	- MARK WANLASS ET AL, "Monolithic, Ultra-Thin GaInP/GaAs/GaInAs Tandem Solar Cells", PHOTOVOLTAIC ENERGY CONVERSION, CONFERENCE RECORD OF THE 2006 IEEE 4TH WORLD CONFERENCE ON, IEEE, PI, (20060501), pages 729 - 732, XP031007408

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