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EP1779190
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EP About this file: EP1779190
| EP1779190 - SILICON-INSULATOR THIN-FILM STRUCTURES FOR OPTICAL MODULATORS AND METHODS OF MANUFACTURE [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 21.08.2009 Database last updated on 04.06.2024 | Most recent event Tooltip | 21.08.2009 | Application deemed to be withdrawn | published on 23.09.2009 [2009/39] | Applicant(s) | For all designated states Honeywell International Inc. 101 Columbia Road Morristown, NJ 07960 / US | [N/P] |
| Former [2008/38] | For all designated states Honeywell International Inc. 101 Columbia Avenue P.O. Box 2245 Morristown NJ 07960 / US | ||
| Former [2007/18] | For all designated states Honeywell International Inc. 101 Columbia Road P.O. Box 2245 Morristown, NJ 07960 / US | Inventor(s) | 01 /
KEYSER, Thomas 3835 Yellowstone Ct Plymouth, MN, 55446 / US | 02 /
LARSEN, Bradley, J. 1090 Wildhurst Trail Mound, MN 5564 / US | 03 /
YUE, Cheisan, J. 1764 Skillman Ave. Roseville, MN 55113 / US | [2007/18] | Representative(s) | Hucker, Charlotte Jane Gill Jennings & Every LLP The Broadgate Tower 20 Primrose Street London EC2A 2ES / GB | [N/P] |
| Former [2007/21] | Hucker, Charlotte Jane Gill Jennings & Every LLP Broadgate House 7 Eldon Street London EC2M 7LH / GB | ||
| Former [2007/18] | Smee, Anthony James Michael Gill Jennings & Every LLP Broadgate House 7 Eldon Street London EC2M 7LH / GB | Application number, filing date | 05810130.4 | 10.08.2005 | [2007/18] | WO2005US28391 | Priority number, date | US20040915299 | 10.08.2004 Original published format: US 915299 | [2007/18] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | WO2006017847 | Date: | 16.02.2006 | Language: | EN | [2006/07] | Type: | A2 Application without search report | No.: | EP1779190 | Date: | 02.05.2007 | Language: | EN | The application published by WIPO in one of the EPO official languages on 16.02.2006 takes the place of the publication of the European patent application. | [2007/18] | Search report(s) | International search report - published on: | EP | 18.05.2006 | Classification | IPC: | G02F1/25, G02B6/132, G02F1/225 | [2007/18] | CPC: |
G02B6/132 (EP,US);
G02B6/131 (EP,US);
G02F1/025 (EP,US)
| Designated contracting states | FR, GB [2007/46] |
| Former [2007/18] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR | Extension states | AL | Not yet paid | BA | Not yet paid | HR | Not yet paid | MK | Not yet paid | YU | Not yet paid | Title | German: | SILIZIUMISOLATOR-DÜNNSCHICHTSTRUKTUREN FÜR OPTISCHE MODULATOREN UND HERSTELLUNGSVERFAHREN | [2007/18] | English: | SILICON-INSULATOR THIN-FILM STRUCTURES FOR OPTICAL MODULATORS AND METHODS OF MANUFACTURE | [2007/18] | French: | STRUCTURES DE FILM MINCE SILICIUM-ISOLANT-SILICIUM DESTINEES A DES MODULATEURS OPTIQUES ET PROCEDES DE FABRICATION ASSOCIES | [2007/18] | Entry into regional phase | 09.02.2007 | National basic fee paid | 09.02.2007 | Designation fee(s) paid | 09.02.2007 | Examination fee paid | Examination procedure | 08.03.2006 | Request for preliminary examination filed International Preliminary Examining Authority: EP | 09.02.2007 | Examination requested [2007/18] | 15.02.2007 | Amendment by applicant (claims and/or description) | 14.08.2007 | Despatch of a communication from the examining division (Time limit: M06) | 25.02.2008 | Reply to a communication from the examining division | 18.09.2008 | Despatch of a communication from the examining division (Time limit: M06) | 31.03.2009 | Application deemed to be withdrawn, date of legal effect [2009/39] | 08.05.2009 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2009/39] | Fees paid | Renewal fee | 03.08.2007 | Renewal fee patent year 03 | 19.06.2008 | Renewal fee patent year 04 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [X]US6323985 (MALONEY TIMOTHY J [US]) [X] 1-4,7,13-24,50-63 * column 5, line 39 - column 6, line 7; figure 3 *; | [XP]WO2004088394 (SIOPTICAL INC [US]) [XP] 1-63* pages 8-11; figures 2-5 *; | [XY] - LIU A ET AL, "A HIGH-SPEED SILICON OPTICAL MODULATOR BASED ON A METAL-OXIDE-SEMICONDUCTOR CAPACITOR", NATURE, NATURE PUBLISHING GROUP, LONDON, GB, (20040212), vol. 427, ISSN 0028-0836, pages 615 - 618, XP001188890 [X] 1-4,7,13-24,50-63 * the whole document * [Y] 5,6,8-12,25-49 DOI: http://dx.doi.org/10.1038/nature02310 | [XY] - LIU A ET AL, "Fast silicon optical modulator", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, (200407), vol. 5357, ISSN 0277-786X, pages 35 - 44, XP002332586 [X] 1-4,7,13-24,50-63 * the whole document * [Y] 5,6,8-12,25-49 DOI: http://dx.doi.org/10.1117/12.531994 | [Y] - AHMED S S ET AL, "Nitrided thermal SiO2 for use as top and bottom gate insulators in self-aligned double gate silicon-on-insulator metal-oxide-semiconductor field effect transistor", JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B (MICROELECTRONICS AND NANOMETER STRUCTURES) AIP FOR AMERICAN VACUUM SOC USA, (200105), vol. 19, no. 3, ISSN 0734-211X, pages 800 - 806, XP012008790 [Y] 5,6,8-12,25-49 * Sections I and II * DOI: http://dx.doi.org/10.1116/1.1364698 | [Y] - AHMED S S ET AL, "Nitrided thermal SiO2 for thin buried gate insulators in dual gate SOI-MOSFET", UNIVERSITY/GOVERNMENT/INDUSTRY MICROELECTRONICS SYMPOSIUM, 1999. PROCEEDINGS OF THE THIRTEENTH BIENNIAL MINNEAPOLIS, MN, USA 20-23 JUNE 1999, PISCATATWAY, NJ, USA,IEEE, US, (19990620), ISBN 0-7803-5240-8, pages 43 - 46, XP010345902 [Y] 5,6,8-12,25-49 * the whole document * DOI: http://dx.doi.org/10.1109/UGIM.1999.782819 | [A] - PNG C E ET AL, "Development of small silicon modulators in silicon-on-insulator (SOI)", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, (2003), vol. 4997, ISSN 0277-786X, pages 190 - 197, XP002329756 [A] 1-63 * the whole document * DOI: http://dx.doi.org/10.1117/12.476666 |