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EP1722403
European procedure
Extract from the Register of European Patents
EP About this file: EP1722403
| EP1722403 - Fabrication method for a thin film semiconductor device [Right-click to bookmark this link] | |||
| Former [2006/46] | Fabrication method for a thin film smiconductor device | ||
| [2012/10] | Status | No opposition filed within time limit Status updated on 31.05.2013 Database last updated on 18.10.2024 | Most recent event Tooltip | 31.05.2013 | No opposition filed within time limit | published on 03.07.2013 [2013/27] | Applicant(s) | For all designated states Seiko Epson Corporation 4-1, Nishishinjuku 2-chome Shinjuku-ku Tokyo 163-0811 / JP | [2012/30] |
| Former [2006/46] | For all designated states SEIKO EPSON CORPORATION 4-1, Nishishinjuku 2-Chome Shinjuku-ku Tokyo 163-0811 / JP | Inventor(s) | 01 /
Miyasaka, Mitsutoshi c/o SEIKO EPSON CORPORATION 3-5, Owa 3-chome Suwa-shi, Nagano-ken 392-8502 / JP | [2012/30] |
| Former [2006/46] | 01 /
Miyasaka, Mitsutoshi c/o SEIKO EPSON CORPORATION 3-5, Owa 3-chome Suwa-shi, Nagano-ken 392-8502 / JP | Representative(s) | MERH-IP Matias Erny Reichl Hoffmann Patentanwälte PartG mbB Paul-Heyse-Strasse 29 80336 München / DE | [N/P] |
| Former [2012/30] | MERH-IP Matias Erny Reichl Hoffmann Paul-Heyse-Strasse 29 80336 München / DE | ||
| Former [2010/10] | MERH-IP Matias Erny Reichl Hoffmann Paul-Heyse-Strasse 29 80336 München / DE | ||
| Former [2006/46] | Hoffmann, Eckart Patentanwalt, Bahnhofstrasse 103 82166 Gräfelfing / DE | Application number, filing date | 06018098.1 | 15.06.1995 | [2006/46] | Priority number, date | JP19940133374 | 15.06.1994 Original published format: JP 13337494 | JP19950072144 | 29.03.1995 Original published format: JP 7214495 | [2006/46] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1722403 | Date: | 15.11.2006 | Language: | EN | [2006/46] | Type: | A3 Search report | No.: | EP1722403 | Date: | 30.05.2007 | [2007/22] | Type: | B1 Patent specification | No.: | EP1722403 | Date: | 25.07.2012 | Language: | EN | [2012/30] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 03.05.2007 | Classification | IPC: | H01L21/336, H01L29/49, H01L21/205, H01L29/786 | [2012/08] | CPC: |
H01L29/66757 (EP,US);
H01L29/768 (KR);
F16C29/00 (EP,US);
H01L21/0237 (EP,US);
H01L21/02521 (EP,US);
H01L21/02532 (EP,US);
H01L21/02576 (EP,US);
H01L21/02579 (EP,US);
H01L21/0262 (EP,US);
H01L21/02661 (EP,US);
H01L21/28079 (EP,US);
H01L21/3105 (EP,US);
H01L29/4908 (EP,US);
H01L29/78675 (EP,US);
F16C2360/45 (EP,US);
|
| Former IPC [2006/46] | H01L21/205, // H01L21/336, H01L29/49 | Designated contracting states | DE, FR, GB [2006/46] | Title | German: | Herstellungsmethode für eine Dünnfilmhalbleiteranordnung | [2006/46] | English: | Fabrication method for a thin film semiconductor device | [2012/10] | French: | Méthode de fabrication d'un dispositif semiconducteur à couche mince | [2006/46] |
| Former [2006/46] | Fabrication method for a thin film smiconductor device | Examination procedure | 07.11.2007 | Examination requested [2007/51] | 21.12.2007 | Despatch of a communication from the examining division (Time limit: M04) | 18.04.2008 | Reply to a communication from the examining division | 21.04.2011 | Despatch of a communication from the examining division (Time limit: M04) | 19.05.2011 | Reply to a communication from the examining division | 22.02.2012 | Communication of intention to grant the patent | 06.06.2012 | Fee for grant paid | 06.06.2012 | Fee for publishing/printing paid | Parent application(s) Tooltip | EP03008849.6 / EP1335419 | EP95921972.6 / EP0714140 | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP19950921972) is 20.03.2000 | Opposition(s) | 26.04.2013 | No opposition filed within time limit [2013/27] | Fees paid | Renewal fee | 30.08.2006 | Renewal fee patent year 03 | 30.08.2006 | Renewal fee patent year 04 | 30.08.2006 | Renewal fee patent year 05 | 30.08.2006 | Renewal fee patent year 06 | 30.08.2006 | Renewal fee patent year 07 | 30.08.2006 | Renewal fee patent year 08 | 30.08.2006 | Renewal fee patent year 09 | 30.08.2006 | Renewal fee patent year 10 | 30.08.2006 | Renewal fee patent year 11 | 30.08.2006 | Renewal fee patent year 12 | 27.06.2007 | Renewal fee patent year 13 | 31.03.2008 | Renewal fee patent year 14 | 26.06.2009 | Renewal fee patent year 15 | 31.03.2010 | Renewal fee patent year 16 | 30.06.2011 | Renewal fee patent year 17 | 31.03.2012 | Renewal fee patent year 18 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [DA]EP0526779 (IBM [US]) [DA] 1 * the whole document *; | [DA]EP0592227 (SHARP KK [JP]) [DA] 1 * the whole document *; | [A] - HORNG NAN CHERN ET AL, "The effects of H2-O2-plasma treatment on the characteristics of polysilicon thin-film transistors", IEEE TRANSACTIONS ON ELECTRON DEVICES USA, (199312), vol. 40, no. 12, ISSN 0018-9383, pages 2301 - 2306, XP002429955 [A] 1 * the whole document * DOI: http://dx.doi.org/10.1109/16.249479 |