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Extract from the Register of European Patents

EP About this file: EP1900681

EP1900681 - Tunnel Field-Effect Transistors based on silicon nanowires [Right-click to bookmark this link]
Former [2008/12]Tunnel effect transistors based on silicon nanowires
[2016/43]
StatusNo opposition filed within time limit
Status updated on  19.01.2018
Database last updated on 07.06.2024
FormerThe patent has been granted
Status updated on  10.02.2017
FormerGrant of patent is intended
Status updated on  06.02.2017
Most recent event   Tooltip06.03.2020Lapse of the patent in a contracting state
New state(s): TR		published on 08.04.2020  [2020/15]
Applicant(s)For all designated states
IMEC VZW
Kapeldreef 75
3001 Leuven / BE
For all designated states
Katholieke Universiteit Leuven
K.U. Leuven R&D
Waaistraat 6
Box 5105
3000 Leuven / BE
[N/P]
Former [2017/52]For all designated states
IMEC VZW
Kapeldreef 75
3001 Leuven / BE
For all designated states
Katholieke Universiteit Leuven
K.U. Leuven R&D
Waaistraat 6
Box 5105
3000 Leuven / BE
Former [2017/11]For all designated states
IMEC
Kapeldreef 75
3001 Leuven / BE
For all designated states
Katholieke Universiteit Leuven
K.U. Leuven R&D
Waaistraat 6
Box 5105
3000 Leuven / BE
Former [2012/15]For all designated states
IMEC
Kapeldreef 75
3001 Leuven / BE
For all designated states
Katholieke Universiteit Leuven
K.U. Leuven R&D
Waaistraat 6
Box 5105
3000 Leuven / BE
Former [2009/33]For all designated states
IMEC
Kapeldreef 75
3001 Leuven / BE
Former [2008/12]For all designated states
Interuniversitair Micro-Elektronica Centrum
Kapeldreef 75
3001 Leuven / BE
Inventor(s)01 / Verhulst, Anne, S.
Broedersstraat 22
2234 Houtvenne / BE
 [2008/12]
Representative(s)Winger
Hundelgemsesteenweg 1116
9820 Merelbeke / BE
[N/P]
Former [2017/11]DenK iP
Hundelgemsesteenweg 1116
9820 Merelbeke / BE
Former [2008/12]Bird, Ariane, et al
Bird Goën & Co Klein Dalenstraat 42A
3020 Winksele / BE
Application number, filing date06024507.327.11.2006
[2008/12]
Priority number, dateUS20060845006P15.09.2006         Original published format: US 845006 P
[2008/12]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP1900681
Date:19.03.2008
Language:EN
[2008/12]
Type: B1 Patent specification 
No.:EP1900681
Date:15.03.2017
Language:EN
[2017/11]
Search report(s)(Supplementary) European search report - dispatched on:EP29.05.2007
ClassificationIPC:H01L29/739, H01L29/06, B82Y10/00, B82B1/00, H01L29/10
[2016/44]
CPC:
H01L29/0665 (EP,US); B82Y10/00 (EP,US); H01L29/0673 (EP,US);
H01L29/0676 (EP,US); H01L29/068 (EP,US); H01L29/7391 (EP,US)
Former IPC [2016/43]H01L29/739, H01L29/06, B82Y10/00, B82B1/00, H01L29/10, H01L29/808
Former IPC [2008/12]B82B1/00, H01L29/10, H01L29/808, // H01L29/772, H01L29/737
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2017/11]
Former [2008/12]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Tunnelfeldeffekttransistoren auf der Basis von Siliziumnanodrähte[2016/43]
English:Tunnel Field-Effect Transistors based on silicon nanowires[2016/43]
French:Transistors à effet de champ et effet tunnel à base de nanofils de silicium[2016/43]
Former [2008/12]Tunneleffekttransistoren auf der Basis von Siliziumnanodrähte
Former [2008/12]Tunnel effect transistors based on silicon nanowires
Former [2008/12]Transistors à effet tunnel à base de nanofils de silicium
Examination procedure22.06.2007Examination requested  [2008/12]
21.09.2011Despatch of a communication from the examining division (Time limit: M06)
30.03.2012Reply to a communication from the examining division
14.10.2016Communication of intention to grant the patent
04.02.2017Fee for grant paid
04.02.2017Fee for publishing/printing paid
04.02.2017Receipt of the translation of the claim(s)
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  21.09.2011
Opposition(s)18.12.2017No opposition filed within time limit [2018/08]
Fees paidRenewal fee
24.11.2008Renewal fee patent year 03
25.11.2009Renewal fee patent year 04
29.11.2010Renewal fee patent year 05
28.11.2011Renewal fee patent year 06
23.11.2012Renewal fee patent year 07
29.11.2013Renewal fee patent year 08
25.11.2014Renewal fee patent year 09
26.11.2015Renewal fee patent year 10
23.11.2016Renewal fee patent year 11
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU27.11.2006
AT15.03.2017
CY15.03.2017
CZ15.03.2017
DK15.03.2017
EE15.03.2017
ES15.03.2017
FI15.03.2017
IT15.03.2017
LT15.03.2017
LV15.03.2017
MC15.03.2017
NL15.03.2017
PL15.03.2017
RO15.03.2017
SE15.03.2017
SI15.03.2017
SK15.03.2017
TR15.03.2017
BG15.06.2017
GR16.06.2017
IS15.07.2017
PT17.07.2017
GB27.11.2017
IE27.11.2017
LU27.11.2017
BE30.11.2017
CH30.11.2017
LI30.11.2017
[2020/15]
Former [2019/46]HU27.11.2006
AT15.03.2017
CY15.03.2017
CZ15.03.2017
DK15.03.2017
EE15.03.2017
ES15.03.2017
FI15.03.2017
IT15.03.2017
LT15.03.2017
LV15.03.2017
MC15.03.2017
NL15.03.2017
PL15.03.2017
RO15.03.2017
SE15.03.2017
SI15.03.2017
SK15.03.2017
BG15.06.2017
GR16.06.2017
IS15.07.2017
PT17.07.2017
GB27.11.2017
IE27.11.2017
LU27.11.2017
BE30.11.2017
CH30.11.2017
LI30.11.2017
Former [2019/31]HU27.11.2006
AT15.03.2017
CZ15.03.2017
DK15.03.2017
EE15.03.2017
ES15.03.2017
FI15.03.2017
IT15.03.2017
LT15.03.2017
LV15.03.2017
MC15.03.2017
NL15.03.2017
PL15.03.2017
RO15.03.2017
SE15.03.2017
SI15.03.2017
SK15.03.2017
BG15.06.2017
GR16.06.2017
IS15.07.2017
PT17.07.2017
GB27.11.2017
IE27.11.2017
LU27.11.2017
BE30.11.2017
CH30.11.2017
LI30.11.2017
Former [2018/50]AT15.03.2017
CZ15.03.2017
DK15.03.2017
EE15.03.2017
ES15.03.2017
FI15.03.2017
IT15.03.2017
LT15.03.2017
LV15.03.2017
MC15.03.2017
NL15.03.2017
PL15.03.2017
RO15.03.2017
SE15.03.2017
SI15.03.2017
SK15.03.2017
BG15.06.2017
GR16.06.2017
IS15.07.2017
PT17.07.2017
GB27.11.2017
IE27.11.2017
LU27.11.2017
BE30.11.2017
CH30.11.2017
LI30.11.2017
Former [2018/45]AT15.03.2017
CZ15.03.2017
DK15.03.2017
EE15.03.2017
ES15.03.2017
FI15.03.2017
IT15.03.2017
LT15.03.2017
LV15.03.2017
MC15.03.2017
NL15.03.2017
PL15.03.2017
RO15.03.2017
SE15.03.2017
SI15.03.2017
SK15.03.2017
BG15.06.2017
GR16.06.2017
IS15.07.2017
PT17.07.2017
IE27.11.2017
LU27.11.2017
CH30.11.2017
LI30.11.2017
Former [2018/41]AT15.03.2017
CZ15.03.2017
DK15.03.2017
EE15.03.2017
ES15.03.2017
FI15.03.2017
IT15.03.2017
LT15.03.2017
LV15.03.2017
MC15.03.2017
NL15.03.2017
PL15.03.2017
RO15.03.2017
SE15.03.2017
SI15.03.2017
SK15.03.2017
BG15.06.2017
GR16.06.2017
IS15.07.2017
PT17.07.2017
LU27.11.2017
CH30.11.2017
LI30.11.2017
Former [2018/33]AT15.03.2017
CZ15.03.2017
DK15.03.2017
EE15.03.2017
ES15.03.2017
FI15.03.2017
IT15.03.2017
LT15.03.2017
LV15.03.2017
MC15.03.2017
NL15.03.2017
PL15.03.2017
RO15.03.2017
SE15.03.2017
SI15.03.2017
SK15.03.2017
BG15.06.2017
GR16.06.2017
IS15.07.2017
PT17.07.2017
CH30.11.2017
LI30.11.2017
Former [2018/14]AT15.03.2017
CZ15.03.2017
DK15.03.2017
EE15.03.2017
ES15.03.2017
FI15.03.2017
IT15.03.2017
LT15.03.2017
LV15.03.2017
NL15.03.2017
PL15.03.2017
RO15.03.2017
SE15.03.2017
SI15.03.2017
SK15.03.2017
BG15.06.2017
GR16.06.2017
IS15.07.2017
PT17.07.2017
Former [2018/09]AT15.03.2017
CZ15.03.2017
DK15.03.2017
EE15.03.2017
ES15.03.2017
FI15.03.2017
IT15.03.2017
LT15.03.2017
LV15.03.2017
NL15.03.2017
PL15.03.2017
RO15.03.2017
SE15.03.2017
SK15.03.2017
BG15.06.2017
GR16.06.2017
IS15.07.2017
PT17.07.2017
Former [2017/51]AT15.03.2017
CZ15.03.2017
EE15.03.2017
ES15.03.2017
FI15.03.2017
IT15.03.2017
LT15.03.2017
LV15.03.2017
NL15.03.2017
PL15.03.2017
RO15.03.2017
SE15.03.2017
SK15.03.2017
BG15.06.2017
GR16.06.2017
IS15.07.2017
PT17.07.2017
Former [2017/50]AT15.03.2017
CZ15.03.2017
EE15.03.2017
ES15.03.2017
FI15.03.2017
IT15.03.2017
LT15.03.2017
LV15.03.2017
NL15.03.2017
PL15.03.2017
RO15.03.2017
SE15.03.2017
SK15.03.2017
BG15.06.2017
GR16.06.2017
IS15.07.2017
Former [2017/49]AT15.03.2017
CZ15.03.2017
EE15.03.2017
ES15.03.2017
FI15.03.2017
IT15.03.2017
LT15.03.2017
LV15.03.2017
NL15.03.2017
RO15.03.2017
SE15.03.2017
SK15.03.2017
BG15.06.2017
GR16.06.2017
IS15.07.2017
Former [2017/48]CZ15.03.2017
FI15.03.2017
LT15.03.2017
LV15.03.2017
NL15.03.2017
SE15.03.2017
BG15.06.2017
GR16.06.2017
Former [2017/41]FI15.03.2017
LT15.03.2017
LV15.03.2017
NL15.03.2017
SE15.03.2017
BG15.06.2017
GR16.06.2017
Documents cited:Search[A]WO02084757  (INFINEON TECHNOLOGIES AG [DE], et al) [A] 1-27 * page 10, line 13 - page 12, line 23; figures 3,4 *;
 [A]US2002163079  (AWANO YUJI [JP]) [A] 1-27 * abstract *;
 [A]US2002172820  (MAJUMDAR ARUN [US], et al) [A] 1-27 * paragraphs [0104] - [0109] - [0175] , [0219] , [0220]; figures 3,13,14,16,24 *;
 [A]US2004075464  (SAMUELSON LARS IVAR [SE], et al) [A] 1-27 * paragraphs [0127] - [0132]; figures 9,11,5 *;
 [A]EP1643560  (MATSUSHITA ELECTRIC IND CO LTD [JP]) [A] 1-27 * abstract *;
 [DA]WO2006073477  (IBM [US], et al) [DA] 1-27 * paragraphs [0005] , [0016] , [0023] , [0024] , [0031]; figures 2,5 *;
 [A]  - LIN C-P ET AL, "Process and Characteristics of Modified Schottky Barrier (MSB) p-Channel FinFETs", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, (200511), vol. 52, no. 11, ISSN 0018-9383, pages 2455 - 2462, XP011141557 [A] 1-27 * abstract *

DOI:   http://dx.doi.org/10.1109/TED.2005.857178
 [A]  - BJÖRK M T ET AL, "One-dimensional heterostructures in semiconductor nanowhiskers", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (20020211), vol. 80, no. 6, ISSN 0003-6951, pages 1058 - 1060, XP012031509 [A] 1-27 * the whole document *

DOI:   http://dx.doi.org/10.1063/1.1447312
Examination   - BHUWALKA K K ET AL, "A Simulation Approach to Optimize the Electrical Parameters of a Vertical Tunnel FET", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, (20050701), vol. 52, no. 7, doi:10.1109/TED.2005.850618, ISSN 0018-9383, pages 1541 - 1547, XP011135503

DOI:   http://dx.doi.org/10.1109/TED.2005.850618
    - KRISHNA KUMAR BHUWALKA ET AL, "VERTICAL TUNNEL FIELD-EFFECT TRANSISTOR", IEEE TRANSACTIONS ON ELECTRON DEVICES, IEEE SERVICE CENTER, PISACATAWAY, NJ, US, (20040201), vol. 51, no. 2, doi:10.1109/TED.2003.821575, ISSN 0018-9383, pages 279 - 282, XP001186093

DOI:   http://dx.doi.org/10.1109/TED.2003.821575
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