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Extract from the Register of European Patents

EP About this file: EP1777751

EP1777751 - Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  02.07.2010
Database last updated on 24.04.2024
Most recent event   Tooltip30.09.2011Lapse of the patent in a contracting state
New state(s): TR		published on 02.11.2011  [2011/44]
Applicant(s)For all designated states
SanDisk Corporation
601 McCarthy Boulevard
Milpitas, CA 95035 / US
[2009/23]
Former [2007/17]For all designated states
SanDisk Corporation
140 Caspian Court
Sunnyvale, CA 94089 / US
Inventor(s)01 / Harari, Eliyahou
20238 Hill Avenue
Saratoga, CA 95070 / US
02 / Samachisa, George
6858 Castlerock Drive
San Jose, CA 95120 / US
03 / Yuan, Jack H.
10339 Tula Lane
Cupertino, CA 94014 / US
04 / Guterman, Daniel C.
305 Jacaranda Drive
Fremont, CA 94539 / US
 [2009/35]
Former [2007/17]01 / Harari, Eliyahou
20238 Hill Avenue
Saratoga, CA 95070 / US
02 / Samachisa, George
6858 Castlerock Drive
San Jose, CA 95120 / US
03 / Yuan, Jack H.
10339 Tula Lane
Cupertino, CA 94014 / US
04 / Gutermann, Daniel C.
305 Jacaranda Drive
Fremont, CA 94539 / US
Representative(s)Hitchcock, Esmond Antony
Marks & Clerk LLP
90 Long Acre
London
WC2E 9RA / GB
[N/P]
Former [2007/17]Hitchcock, Esmond Antony
Lloyd Wise Commonwealth House, 1-19 New Oxford Street
London WC1A 1LW / GB
Application number, filing date07002288.431.10.2002
[2007/17]
Priority number, dateUS2001000269631.10.2001         Original published format: US 2696
US2002016123531.05.2002         Original published format: US 161235
US2002028035225.10.2002         Original published format: US 280352
[2007/17]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1777751
Date:25.04.2007
Language:EN
[2007/17]
Type: A3 Search report 
No.:EP1777751
Date:09.05.2007
[2007/19]
Type: B1 Patent specification 
No.:EP1777751
Date:26.08.2009
Language:EN
[2009/35]
Search report(s)(Supplementary) European search report - dispatched on:EP13.04.2007
ClassificationIPC:H01L29/792
[2007/17]
CPC:
B82Y10/00 (EP,US); H10B43/30 (EP,US); G11C11/5671 (EP,US);
G11C16/0466 (EP,US); G11C16/0483 (EP,US); H01L29/4234 (EP,US);
H01L29/7923 (EP,US); H10B41/30 (EP,US); H10B41/35 (EP,US);
H10B69/00 (EP,US); G11C16/0475 (EP,US); G11C16/0491 (EP,US);
G11C2216/06 (EP,US); Y10S438/947 (EP,US) (-)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   IE,   IT,   LI,   LU,   MC,   NL,   PT,   SE,   SK,   TR [2007/17]
TitleGerman:Nichtflüchtige integrierte Mehrzustands-Speichersysteme, die dielektrische Speicherelemente verwenden[2007/17]
English:Multi-state non-volatile integrated circuit memory systems that employ dielectric storage elements[2007/17]
French:Systèmes de mémoire à circuit intégré non-volatile et à multiples états qui utilisent des éléments de mémorisation diélectrique[2007/17]
Examination procedure02.02.2007Examination requested  [2007/17]
13.12.2007Despatch of a communication from the examining division (Time limit: M06)
30.07.2008Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time
29.09.2008Reply to a communication from the examining division
31.10.2008Despatch of a communication from the examining division (Time limit: M04)
01.12.2008Reply to a communication from the examining division
13.03.2009Communication of intention to grant the patent
13.07.2009Fee for grant paid
13.07.2009Fee for publishing/printing paid
Parent application(s)   TooltipEP02784379.6  / EP1446840
Opposition(s)27.05.2010No opposition filed within time limit [2010/31]
Request for further processing for:The application is deemed to be withdrawn due to failure to reply to the examination report
30.09.2008Request for further processing filed
30.09.2008Full payment received (date of receipt of payment)
Fees paidRenewal fee
02.02.2007Renewal fee patent year 03
02.02.2007Renewal fee patent year 04
02.02.2007Renewal fee patent year 05
29.10.2007Renewal fee patent year 06
27.10.2008Renewal fee patent year 07
Opt-out from the exclusive  Tooltip
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Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipAT26.08.2009
BE26.08.2009
CY26.08.2009
CZ26.08.2009
DK26.08.2009
EE26.08.2009
FI26.08.2009
IT26.08.2009
SE26.08.2009
SK26.08.2009
TR26.08.2009
CH31.10.2009
IE31.10.2009
LI31.10.2009
LU31.10.2009
MC31.10.2009
BG26.11.2009
GR27.11.2009
ES07.12.2009
PT28.12.2009
[2011/44]
Former [2011/22]AT26.08.2009
BE26.08.2009
CY26.08.2009
CZ26.08.2009
DK26.08.2009
EE26.08.2009
FI26.08.2009
IT26.08.2009
SE26.08.2009
SK26.08.2009
CH31.10.2009
IE31.10.2009
LI31.10.2009
LU31.10.2009
MC31.10.2009
BG26.11.2009
GR27.11.2009
ES07.12.2009
PT28.12.2009
Former [2011/19]AT26.08.2009
BE26.08.2009
CY26.08.2009
CZ26.08.2009
DK26.08.2009
EE26.08.2009
FI26.08.2009
IT26.08.2009
SE26.08.2009
SK26.08.2009
CH31.10.2009
IE31.10.2009
LI31.10.2009
MC31.10.2009
BG26.11.2009
GR27.11.2009
ES07.12.2009
PT28.12.2009
Former [2011/06]AT26.08.2009
BE26.08.2009
CY26.08.2009
CZ26.08.2009
DK26.08.2009
EE26.08.2009
FI26.08.2009
SE26.08.2009
SK26.08.2009
CH31.10.2009
IE31.10.2009
LI31.10.2009
MC31.10.2009
BG26.11.2009
GR27.11.2009
ES07.12.2009
PT28.12.2009
Former [2010/28]AT26.08.2009
BE26.08.2009
CY26.08.2009
CZ26.08.2009
DK26.08.2009
EE26.08.2009
FI26.08.2009
SE26.08.2009
SK26.08.2009
MC31.10.2009
BG26.11.2009
ES07.12.2009
PT28.12.2009
Former [2010/27]AT26.08.2009
CY26.08.2009
CZ26.08.2009
DK26.08.2009
EE26.08.2009
FI26.08.2009
SE26.08.2009
SK26.08.2009
MC31.10.2009
BG26.11.2009
ES07.12.2009
PT28.12.2009
Former [2010/20]AT26.08.2009
CY26.08.2009
DK26.08.2009
EE26.08.2009
FI26.08.2009
SE26.08.2009
BG26.11.2009
ES07.12.2009
PT28.12.2009
Former [2010/19]AT26.08.2009
CY26.08.2009
FI26.08.2009
SE26.08.2009
BG26.11.2009
ES07.12.2009
PT28.12.2009
Former [2010/17]AT26.08.2009
CY26.08.2009
FI26.08.2009
SE26.08.2009
BG26.11.2009
PT28.12.2009
Former [2010/15]AT26.08.2009
CY26.08.2009
FI26.08.2009
SE26.08.2009
Documents cited:Search[XA]JP2001148434  ;
 [A]US5705415  (ORLOWSKI MARIUS K [US], et al) [A] 2-5 * column 1, line 6 - column 1, line 50 *;
 [XA]US6011725  (EITAN BOAZ [IL]) [X] 1,6-14 * column 21, line 32 - column 24, line 31 * [A] 2-5;
 [XA]WO0165567  (ADVANCED MICRO DEVICES INC [US]) [X] 1,6-14 * the whole document * [A] 2-5;
 [PX]US2002149060  (OGURA SEIKI O [US], et al) [PX] 1,6-14* page 10, paragraph 156 - page 11, paragraph 171; figures 14-16 *
 [XA]  - PATENT ABSTRACTS OF JAPAN, (20010309), vol. 2000, no. 22, & JP2001148434 A 20010529 (NEW HEIRO:KK; HALO LSI DESIGN & DEVICE TECHNOL INC) [X] 1,6-14 * abstract * [A]
by applicant   - CHAN ET AL., "A True Single-Transistor Oxide-Nitride-Oxide EEPROM Device", IEEE ELECTRON 0 DEVICE LETTERS, (198703), vol. EDL-8, no. 3, pages 93 - 95
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.