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Extract from the Register of European Patents

EP About this file: EP1933377

EP1933377 - Semiconductor device and method for manufacturing the same [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  24.02.2012
Database last updated on 15.06.2024
Most recent event   Tooltip24.02.2012No opposition filed within time limitpublished on 28.03.2012  [2012/13]
Applicant(s)For all designated states
SHINKO ELECTRIC INDUSTRIES CO., LTD.
80 Oshimada-machi
Nagano-shi, Nagano 381-2287 / JP
[2008/25]
Inventor(s)01 / Machida, Yoshihiro
c/o Shinko Electric Industries Co., Ltd. 80, Oshimada-machi
Nagano-shi Nagano 381-2287 / JP
02 / Yamano, Takaharu
c/o Shinko Electric Industries Co., Ltd. 80, Oshimada-machi
Nagano-shi Nagano 381-2287 / JP
 [2008/25]
Representative(s)Zimmermann, Gerd Heinrich, et al
Zimmermann & Partner Patentanwälte mbB
Postfach 330 920
80069 München / DE
[N/P]
Former [2008/25]Zimmermann, Gerd Heinrich, et al
Zimmermann & Partner, P.O. Box 330 920
80069 München / DE
Application number, filing date07020813.724.10.2007
[2008/25]
Priority number, dateJP2006028914924.10.2006         Original published format: JP 2006289149
[2008/25]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP1933377
Date:18.06.2008
Language:EN
[2008/25]
Type: A3 Search report 
No.:EP1933377
Date:21.10.2009
[2009/43]
Type: B1 Patent specification 
No.:EP1933377
Date:20.04.2011
Language:EN
[2011/16]
Search report(s)(Supplementary) European search report - dispatched on:EP22.09.2009
ClassificationIPC:H01L21/60, H01L23/485
[2008/25]
CPC:
H01L23/3114 (EP,US); H01L23/48 (KR); H01L21/6835 (EP,US);
H01L23/28 (KR); H01L23/485 (EP,US); H01L23/525 (EP,US);
H01L24/11 (EP,US); H01L24/12 (EP,US); H01L2221/68359 (EP,US);
H01L2221/68363 (EP,US); H01L2221/68377 (EP,US); H01L2224/0231 (EP,US);
H01L2224/02319 (EP,US); H01L2224/02333 (EP,US); H01L2224/0401 (EP,US);
H01L2224/13099 (EP,US); H01L2924/01006 (EP,US); H01L2924/01019 (EP,US);
H01L2924/01029 (EP,US); H01L2924/01033 (EP,US); H01L2924/01037 (EP,US);
H01L2924/01078 (EP,US); H01L2924/01079 (EP,US); H01L2924/01082 (EP,US);
H01L2924/01088 (EP,US); H01L2924/014 (EP,US) (-)
Designated contracting statesDE [2010/26]
Former [2008/25]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MT,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Halbleiterbauelement und Herstellungsverfahren dafür[2008/25]
English:Semiconductor device and method for manufacturing the same[2008/25]
French:Dispositif semi-conducteur et son procédé de fabrication[2008/25]
Examination procedure21.04.2010Amendment by applicant (claims and/or description)
21.04.2010Examination requested  [2010/22]
22.04.2010Loss of particular rights, legal effect: designated state(s)
27.05.2010Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR
23.11.2010Communication of intention to grant the patent
01.03.2011Fee for grant paid
01.03.2011Fee for publishing/printing paid
Opposition(s)23.01.2012No opposition filed within time limit [2012/13]
Fees paidRenewal fee
28.10.2009Renewal fee patent year 03
02.11.2010Renewal fee patent year 04
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Documents cited:Search[A]US6096577  (HASHIMOTO NOBUAKI [JP]) [A] 2-4* column 4, line 40 - column 5, line 12; figures 1a,1b *;
 [A]US2002175409  (TSUBOSAKI KUNIHIRO [JP]) [A] 1,5 * paragraph [0052] - paragraph [0100]; figures 5,6 *;
 [A]US2004115868  (ONO YOSHIHIRO [JP]) [A] 1,5 * the whole document *;
 [XA]US2004159958  (FUNAKI TSUKIO [JP]) [X] 6 * paragraph [0066] - paragraph [0068]; figure 1 * * paragraph [0077] - paragraph [0078] * * the whole document * [A]
by applicantUS2004159958
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.