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EP1921681
European procedure
Extract from the Register of European Patents
EP About this file: EP1921681
| EP1921681 - Method of fabricating thin film transistor using an oriented zinc oxide layer [Right-click to bookmark this link] | |||
| Former [2008/20] | Thin film transistor using an oriented zinc oxide layer | ||
| [2018/09] | Status | No opposition filed within time limit Status updated on 07.06.2019 Database last updated on 19.10.2024 | |
| Former | The patent has been granted Status updated on 29.06.2018 | ||
| Former | Grant of patent is intended Status updated on 26.02.2018 | Most recent event Tooltip | 07.06.2019 | No opposition filed within time limit | published on 10.07.2019 [2019/28] | Applicant(s) | For all designated states Xerox Corporation Xerox Square - 20A, 100 Clinton Avenue South Rochester New York 14644 / US | [2008/20] | Inventor(s) | 01 /
LI, Yuning 3498 Copernicus Drive Mississauga Ontario L5B 3K5 / CA | 02 /
ONG, Beng S 41 Jurong East Avenue 1 04-02 Parc Oasis Singapore 609777 / SG | [2018/31] |
| Former [2008/22] | 01 /
LI, Yuning 3498 Copernicus Drive Mississauga Ontario L5B 3K5 / CA | ||
| 02 /
ONG, Beng S 41 Jurong East Avenue 1 04-02 Parc Oasis Singapore 609777 / SG | |||
| Former [2008/20] | 01 /
LI, Yuning 3498 Copernicus Drive Mississauga Ontario L5B 3K5 / CA | ||
| 02 /
ONG, Beng S 2947 Harvey Crescent Mississauga Ontario L5L 4V9 / CA | Representative(s) | Gill Jennings & Every LLP The Broadgate Tower 20 Primrose Street London EC2A 2ES / GB | [2018/31] |
| Former [2008/20] | Skone James, Robert Edmund Gill Jennings & Every LLP Broadgate House 7 Eldon Street London EC2M 7LH / GB | Application number, filing date | 07117721.6 | 02.10.2007 | [2008/20] | Priority number, date | US20060546857 | 12.10.2006 Original published format: US 546857 | [2008/20] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1921681 | Date: | 14.05.2008 | Language: | EN | [2008/20] | Type: | A3 Search report | No.: | EP1921681 | Date: | 01.04.2009 | [2009/14] | Type: | B1 Patent specification | No.: | EP1921681 | Date: | 01.08.2018 | Language: | EN | [2018/31] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 27.02.2009 | Classification | IPC: | H01L29/786 | [2008/20] | CPC: |
H01L29/7869 (EP,KR,US);
B82Y10/00 (EP,KR,US);
H01L29/04 (EP,KR,US);
H01L29/045 (EP,US);
H01L29/0665 (EP,KR,US);
H01L29/0673 (EP,KR,US)
| Designated contracting states | DE, FR, GB [2018/31] |
| Former [2009/50] | DE, FR, GB | ||
| Former [2008/20] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR | Title | German: | Verfahren zur Herstellung eines Dünnschichttransistors mit einer orientierten Zinkoxidschicht | [2018/09] | English: | Method of fabricating thin film transistor using an oriented zinc oxide layer | [2018/09] | French: | Procédé de fabrication de transistor à couche mince utilisant une couche d'oxyde de zinc orientée | [2018/09] |
| Former [2008/20] | Dünnschichttransistor mit einer orientierten Zinkoxidschicht | ||
| Former [2008/20] | Thin film transistor using an oriented zinc oxide layer | ||
| Former [2008/20] | Transistor à couche mince utilisant une couche d'oxyde de zinc orientée | Examination procedure | 01.10.2009 | Examination requested [2009/46] | 02.10.2009 | Loss of particular rights, legal effect: designated state(s) | 28.10.2009 | Despatch of a communication from the examining division (Time limit: M04) | 09.11.2009 | Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, GR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR | 05.02.2010 | Reply to a communication from the examining division | 21.04.2016 | Despatch of a communication from the examining division (Time limit: M04) | 15.07.2016 | Reply to a communication from the examining division | 27.02.2018 | Communication of intention to grant the patent | 20.06.2018 | Fee for grant paid | 20.06.2018 | Fee for publishing/printing paid | 20.06.2018 | Receipt of the translation of the claim(s) | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 28.10.2009 | Opposition(s) | 03.05.2019 | No opposition filed within time limit [2019/28] | Fees paid | Renewal fee | 02.11.2009 | Renewal fee patent year 03 | 02.11.2010 | Renewal fee patent year 04 | 31.10.2011 | Renewal fee patent year 05 | 31.10.2012 | Renewal fee patent year 06 | 31.10.2013 | Renewal fee patent year 07 | 31.10.2014 | Renewal fee patent year 08 | 02.11.2015 | Renewal fee patent year 09 | 31.10.2016 | Renewal fee patent year 10 | 02.11.2017 | Renewal fee patent year 11 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]US2005074589 (PAN ALFRED I-TSUNG [US], et al); | [A]US2005189883 (SUH MIN-CHUL [KR], et al); | [A]US2006105513 (AFZALI-ARDAKANI ALI [US], et al); | [X]WO2006081511 (HEWLETT PACKARD DEVELOPMENT CO [US], et al); | [X]US2006197064 (PAN ALFRED I [US], et al); | by applicant | WO2006081511 | US2006197064 |