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EP1887109
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EP About this file: EP1887109
| EP1887109 - Aluminum nitride single crystal [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 22.01.2010 Database last updated on 03.09.2024 | Most recent event Tooltip | 22.01.2010 | Application deemed to be withdrawn | published on 24.02.2010 [2010/08] | Applicant(s) | For all designated states NGK Insulators, Ltd. 2-56 Suda-cho, Mizuho-ku Nagoya-City, Aichi Pref. 467-8530 / JP | [N/P] |
| Former [2008/07] | For all designated states NGK INSULATORS, LTD. 2-56 Suda-cho, Mizuho-ku Nagoya-City, Aichi Pref. 467-8530 / JP | Inventor(s) | 01 /
Kobayashi, Yoshimasa, c/o NGK Insulators Ltd. 2-56 Suda-cho, Mizuho-ku Nagoya City, Aichi-ken, 467-8530 / JP | [2008/07] | Representative(s) | Paget, Hugh Charles Edward, et al Mewburn Ellis LLP City Tower 40 Basinghall Street London EC2V 5DE / GB | [N/P] |
| Former [2008/07] | Paget, Hugh Charles Edward, et al Mewburn Ellis LLP York House 23 Kingsway London WC2B 6HP / GB | Application number, filing date | 07253014.0 | 31.07.2007 | [2008/07] | Priority number, date | JP20060210195 | 01.08.2006 Original published format: JP 2006210195 | JP20070159134 | 15.06.2007 Original published format: JP 2007159134 | [2008/07] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1887109 | Date: | 13.02.2008 | Language: | EN | [2008/07] | Type: | A3 Search report | No.: | EP1887109 | Date: | 11.02.2009 | [2009/07] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 13.01.2009 | Classification | IPC: | C30B23/00, C30B29/40 | [2008/07] | CPC: |
C30B23/00 (EP,US);
C30B29/403 (EP,US)
| Designated contracting states | DE, FR, GB [2009/42] |
| Former [2008/07] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, PL, PT, RO, SE, SI, SK, TR | Title | German: | Aluminiumnitrid-Einkristall | [2008/07] | English: | Aluminum nitride single crystal | [2008/07] | French: | Monocristal de nitrure d'aluminium | [2008/07] | Examination procedure | 12.08.2009 | Application deemed to be withdrawn, date of legal effect [2010/08] | 28.09.2009 | Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time [2010/08] | Fees paid | Renewal fee | 21.07.2009 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]US4489128 (RUTZ RICHARD F [US]) [X] 1,3 * claim 1 *; | [A]US6086672 (HUNTER CHARLES ERIC [US]); | [A]DE10248964 (BICKERMANN MATTHIAS [DE]); | [A]WO2005012602 (SICRYSTAL AG [DE], et al); | [A]US5880491 (SOREF RICHARD A [US], et al); | [X] - LIU L ET AL, "Substrates for gallium nitride epitaxy", MATERIALS SCIENCE AND ENGINEERING R: REPORTS, ELSEVIER SEQUOIA S.A., LAUSANNE, CH, (20020430), vol. 37, no. 3, ISSN 0927-796X, pages 61 - 127, XP004349792 [X] 1,3 * page 110; table 16 * * page 109 * * page 111 * DOI: http://dx.doi.org/10.1016/S0927-796X(02)00008-6 | [X] - CHAUDHURI J ET AL, "X-RAY DOUBLE CRYSTAL CHARACTERIZATION OF SINGLE CRYSTAL EPITAXIAL ALUMINUM NITRIDE THIN FILMS ON SAPPHIRE, SILICON CARBIDE AND SILICON SUBSTRATES", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (19950615), vol. 77, no. 12, ISSN 0021-8979, pages 6263 - 6266, XP000543993 [X] 1-3 * table 1 * DOI: http://dx.doi.org/10.1063/1.359158 | [X] - TANG Y-H ET AL, "Electronic structures of wide-band-gap (SiC)1-x(AlN)x quaternary semiconductors", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (20050428), vol. 97, no. 10, ISSN 0021-8979, pages 103702 - 103702, XP012069353 [X] 1,3 * page 1, column 1, paragraph 2 * * page 2, column 1, paragraph 3; table 1 * | [A] - YOKOKAWA H ET AL, "X-ray powder diffraction data for two hexagonal aluminum monoxycarbide phases", JOURNAL OF THE AMERICAN CERAMIC SOCIETY, BLACKWELL PUBLISHING, MALDEN, MA, US, (19820301), vol. 65, ISSN 0002-7820, pages C - 40, XP008099454 [A] 1-3 * figure 1 * DOI: http://dx.doi.org/10.1111/j.1151-2916.1982.tb10394.x | [A] - I.B. CULTER, P.D. MILLER, W. RAFANIELLO, "News materials in the Si-C-Al-O-N and related systems", NATURE, (19781005), vol. 275, page 434435, XP002508079 [A] 1 * figure 3; table 1 * | [A] - KAI Y ET AL, "SYNTHESIS OF LOW-RESISTIVITY ALUMINUM NITRIDE FILMS USING PULSED LASER DEPOSITION", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO,JP, (20030301), vol. 42, no. 3A, PART 02, ISSN 0021-4922, pages L229 - L231, XP001164673 [A] 2 * abstract * * page 230, column 2, paragraph 3 * DOI: http://dx.doi.org/10.1143/JJAP.42.L229 | [A] - SLACK G A ET AL, "Growth of high purity AlN crystals", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 34, no. 2, ISSN 0022-0248, (19760701), pages 263 - 279, (19760701), XP022624365 DOI: http://dx.doi.org/10.1016/0022-0248(76)90139-1 | [A] - TSUCHIDA T ET AL, "self-combustion reaction induced by mechanical activation of Al-Si-C powder mixtures", EUROPEAN JOURNAL OF SOLID STATE AND INORGANIC CHEMISTRY, GAUTHIER-VILLARS, PARIS, FR, (19950101), vol. 32, ISSN 0992-4361, pages 629 - 638, XP008099461 |