blank Quick help
blank Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability
Register Forum

2022.02.11

More...
blank News flashes

News Flashes

New version of the European Patent Register – SPC proceedings information in the Unitary Patent Register.

2024-07-24

More...
blank Related links

Release notes
European Patent Register Assistant
European Patent Register Resource Book
European Patent Register – pocket guide
FAQ - European Patent Register
FAQ - Register Alert
Federated Register (Flyer)
Global Dossier (Flyer)
Register events
Deep link coverage
Federated Register content
The Patent Information Tour
Fair use charter

Extract from the Register of European Patents

EP About this file: EP2038919

EP2038919 - METHOD OF MANUFACTURING A SEMICONDUCTOR NANOWIRE DEVICE [Right-click to bookmark this link]
Former [2009/13]METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE OBTAINED BY SUCH A METHOD
[2014/37]
StatusNo opposition filed within time limit
Status updated on  15.01.2016
Database last updated on 31.08.2024
Most recent event   Tooltip13.10.2017Lapse of the patent in a contracting state
New state(s): BG, CY, HU, TR		published on 15.11.2017  [2017/46]
Applicant(s)For all designated states
NXP B.V.
High Tech Campus 60
5656 AG Eindhoven / NL
[2009/50]
Former [2009/13]For all designated states
NXP B.V.
High Tech Campus 60
5656 AG Eindhoven / NL
Inventor(s)01 / HURX, Fred
NXP Semiconductors Austria GmbH
Intellectual Property Department
1102 Vienna / AT
02 / DONKERS, Johannes Josephus Theodorus Marinus
NXP Semiconductors Austria GmbH
Intellectual Property Department
1102 Vienna / AT
 [2015/11]
Former [2009/13]01 / HURX, Fred
NXP Semiconductors Austria GmbH Intellectual Property Department
1102 Vienna / AT
02 / DONKERS, Johannes Josephus Theodorus Marinus
NXP Semiconductors Austria GmbH Intellectual Property Department
1102 Vienna / AT
Representative(s)Schouten, Marcus Maria, et al
NXP B.V.
Intellectual Property & Licensing
High Tech Campus 60
5656 AG Eindhoven / NL
[2015/11]
Former [2009/42]Schouten, Marcus Maria, et al
NXP B.V. IP & L Department High Tech Campus 32
5656 AE Eindhoven / NL
Former [2009/13]Röggla, Harald
NXP Semiconductors Intellectual Property Department Gutheil-Schoder-Gasse 8-12
1101 Vienna / AT
Former [2009/13]Röggla, Harald
NXP Semiconductors IP Department Gutheil-Schoder-Gasse 8-12
1100 Wien / AT
Application number, filing date07766771.518.06.2007
[2009/13]
WO2007IB52319
Priority number, dateEP2006011565019.06.2006         Original published format: EP 06115650
[2009/13]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report
No.:WO2007148277
Date:27.12.2007
Language:EN
[2007/52]
Type: A2 Application without search report 
No.:EP2038919
Date:25.03.2009
Language:EN
The application published by WIPO in one of the EPO official languages on 27.12.2007 takes the place of the publication of the European patent application.
[2009/13]
Type: B1 Patent specification 
No.:EP2038919
Date:11.03.2015
Language:EN
[2015/11]
Search report(s)International search report - published on:EP28.02.2008
ClassificationIPC:H01L29/775, H01L29/06, H01L29/66, B82Y40/00, B82Y10/00, H01L21/321, H01L21/335
[2014/37]
CPC:
H01L29/0665 (EP,US); H01L21/18 (KR); B82Y10/00 (EP,US);
B82Y40/00 (EP,KR,US); H01L22/00 (KR); H01L29/0673 (EP,US);
H01L29/0676 (EP,US); H01L29/66439 (EP,US); H01L29/772 (KR);
H01L29/775 (EP,US); H01L21/31053 (EP,US); H01L29/66666 (EP,US) (-)
Former IPC [2009/13]H01L21/335, H01L29/772, H01L29/06, H01L21/66
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MT,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2009/13]
Extension statesAL19.01.2009
BA19.01.2009
HR19.01.2009
MK19.01.2009
RS19.01.2009
TitleGerman:VERFAHREN ZUR HERSTELLUNG EINER NANODRAHT-HALBLEITERVORRICHTUNG[2014/41]
English:METHOD OF MANUFACTURING A SEMICONDUCTOR NANOWIRE DEVICE[2014/41]
French:PROCÉDÉ DE FABRICATION D'UN DISPOSITIF NANOFIL SEMI-CONDUCTEUR[2014/41]
Former [2009/13]VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERVORRICHTUNG UND IN EINEM SOLCHEN VERFAHREN HERGESTELLTE HALBLEITERVORRICHTUNG
Former [2009/13]METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE OBTAINED BY SUCH A METHOD
Former [2009/13]PROCÉDÉ DE FABRICATION D'UN DISPOSITIF SEMI-CONDUCTEUR ET DISPOSITIF SEMI-CONDUCTEUR OBTENU PAR UN TEL PROCÉDÉ
Entry into regional phase19.01.2009National basic fee paid 
19.01.2009Designation fee(s) paid 
19.01.2009Examination fee paid 
Examination procedure19.01.2009Examination requested  [2009/13]
15.07.2009Despatch of a communication from the examining division (Time limit: M06)
13.01.2010Reply to a communication from the examining division
24.10.2014Communication of intention to grant the patent
28.01.2015Fee for grant paid
28.01.2015Fee for publishing/printing paid
28.01.2015Receipt of the translation of the claim(s)
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  15.07.2009
Opposition(s)14.12.2015No opposition filed within time limit [2016/07]
Fees paidRenewal fee
30.06.2009Renewal fee patent year 03
30.06.2010Renewal fee patent year 04
30.06.2011Renewal fee patent year 05
02.07.2012Renewal fee patent year 06
01.07.2013Renewal fee patent year 07
30.06.2014Renewal fee patent year 08
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU18.06.2007
AT11.03.2015
BE11.03.2015
BG11.03.2015
CY11.03.2015
CZ11.03.2015
DK11.03.2015
EE11.03.2015
ES11.03.2015
FI11.03.2015
IT11.03.2015
LT11.03.2015
LV11.03.2015
MC11.03.2015
MT11.03.2015
NL11.03.2015
PL11.03.2015
RO11.03.2015
SE11.03.2015
SI11.03.2015
SK11.03.2015
TR11.03.2015
GR12.06.2015
GB18.06.2015
IE18.06.2015
LU18.06.2015
CH30.06.2015
LI30.06.2015
IS11.07.2015
PT13.07.2015
[2017/39]
Former [2017/03]AT11.03.2015
BE11.03.2015
CZ11.03.2015
DK11.03.2015
EE11.03.2015
ES11.03.2015
FI11.03.2015
IT11.03.2015
LT11.03.2015
LV11.03.2015
MC11.03.2015
MT11.03.2015
NL11.03.2015
PL11.03.2015
RO11.03.2015
SE11.03.2015
SI11.03.2015
SK11.03.2015
GR12.06.2015
GB18.06.2015
IE18.06.2015
LU18.06.2015
CH30.06.2015
LI30.06.2015
IS11.07.2015
PT13.07.2015
Former [2016/37]AT11.03.2015
BE11.03.2015
CZ11.03.2015
DK11.03.2015
EE11.03.2015
ES11.03.2015
FI11.03.2015
IT11.03.2015
LT11.03.2015
LV11.03.2015
MC11.03.2015
NL11.03.2015
PL11.03.2015
RO11.03.2015
SE11.03.2015
SI11.03.2015
SK11.03.2015
GR12.06.2015
GB18.06.2015
IE18.06.2015
LU18.06.2015
CH30.06.2015
LI30.06.2015
IS11.07.2015
PT13.07.2015
Former [2016/23]AT11.03.2015
CZ11.03.2015
DK11.03.2015
EE11.03.2015
ES11.03.2015
FI11.03.2015
IT11.03.2015
LT11.03.2015
LV11.03.2015
MC11.03.2015
NL11.03.2015
PL11.03.2015
RO11.03.2015
SE11.03.2015
SI11.03.2015
SK11.03.2015
GR12.06.2015
GB18.06.2015
IE18.06.2015
LU18.06.2015
CH30.06.2015
LI30.06.2015
IS11.07.2015
PT13.07.2015
Former [2016/22]AT11.03.2015
CZ11.03.2015
DK11.03.2015
EE11.03.2015
ES11.03.2015
FI11.03.2015
IT11.03.2015
LT11.03.2015
LV11.03.2015
MC11.03.2015
NL11.03.2015
PL11.03.2015
RO11.03.2015
SE11.03.2015
SI11.03.2015
SK11.03.2015
GR12.06.2015
IE18.06.2015
LU18.06.2015
CH30.06.2015
LI30.06.2015
IS11.07.2015
PT13.07.2015
Former [2016/20]AT11.03.2015
CZ11.03.2015
DK11.03.2015
EE11.03.2015
ES11.03.2015
FI11.03.2015
IT11.03.2015
LT11.03.2015
LV11.03.2015
MC11.03.2015
NL11.03.2015
PL11.03.2015
RO11.03.2015
SE11.03.2015
SI11.03.2015
SK11.03.2015
GR12.06.2015
IE18.06.2015
LU18.06.2015
IS11.07.2015
PT13.07.2015
Former [2016/11]AT11.03.2015
CZ11.03.2015
DK11.03.2015
EE11.03.2015
ES11.03.2015
FI11.03.2015
IT11.03.2015
LT11.03.2015
LV11.03.2015
MC11.03.2015
NL11.03.2015
PL11.03.2015
RO11.03.2015
SE11.03.2015
SI11.03.2015
SK11.03.2015
GR12.06.2015
LU18.06.2015
IS11.07.2015
PT13.07.2015
Former [2016/09]AT11.03.2015
CZ11.03.2015
DK11.03.2015
EE11.03.2015
ES11.03.2015
FI11.03.2015
IT11.03.2015
LT11.03.2015
LV11.03.2015
MC11.03.2015
NL11.03.2015
PL11.03.2015
RO11.03.2015
SE11.03.2015
SK11.03.2015
GR12.06.2015
IS11.07.2015
PT13.07.2015
Former [2016/07]AT11.03.2015
CZ11.03.2015
DK11.03.2015
EE11.03.2015
ES11.03.2015
FI11.03.2015
IT11.03.2015
LT11.03.2015
LV11.03.2015
NL11.03.2015
PL11.03.2015
RO11.03.2015
SE11.03.2015
SK11.03.2015
GR12.06.2015
IS11.07.2015
PT13.07.2015
Former [2016/03]AT11.03.2015
CZ11.03.2015
EE11.03.2015
ES11.03.2015
FI11.03.2015
IT11.03.2015
LT11.03.2015
LV11.03.2015
NL11.03.2015
PL11.03.2015
RO11.03.2015
SE11.03.2015
SK11.03.2015
GR12.06.2015
IS11.07.2015
PT13.07.2015
Former [2015/51]AT11.03.2015
CZ11.03.2015
EE11.03.2015
ES11.03.2015
FI11.03.2015
LT11.03.2015
LV11.03.2015
NL11.03.2015
PL11.03.2015
RO11.03.2015
SE11.03.2015
SK11.03.2015
GR12.06.2015
IS11.07.2015
PT13.07.2015
Former [2015/50]CZ11.03.2015
EE11.03.2015
ES11.03.2015
FI11.03.2015
LT11.03.2015
LV11.03.2015
NL11.03.2015
PL11.03.2015
RO11.03.2015
SE11.03.2015
SK11.03.2015
GR12.06.2015
IS11.07.2015
PT13.07.2015
Former [2015/49]CZ11.03.2015
EE11.03.2015
ES11.03.2015
FI11.03.2015
LT11.03.2015
LV11.03.2015
NL11.03.2015
RO11.03.2015
SE11.03.2015
SK11.03.2015
GR12.06.2015
PT13.07.2015
Former [2015/41]ES11.03.2015
FI11.03.2015
LT11.03.2015
LV11.03.2015
NL11.03.2015
SE11.03.2015
GR12.06.2015
Former [2015/39]ES11.03.2015
FI11.03.2015
LT11.03.2015
LV11.03.2015
SE11.03.2015
GR12.06.2015
Former [2015/37]ES11.03.2015
FI11.03.2015
LT11.03.2015
SE11.03.2015
GR12.06.2015
Former [2015/36]ES11.03.2015
FI11.03.2015
LT11.03.2015
SE11.03.2015
Former [2015/35]ES11.03.2015
LT11.03.2015
Former [2015/33]ES11.03.2015
Cited inInternational search[A]US2003100189  (LEE CHUN-TAO [TW], et al) [A] 1-14 * paragraphs [0004] , [0010] - [0013]; figures 1A-1F *;
 [Y]US2004005769  (MIKOLAS DAVID G [US]) [Y] 5,6,13 * paragraph [0055]; figures 2A,2B,4,6 * * abstract *;
 [A]US2005084990  (LIU YUH-TURNG [TW], et al) [A] 1-14 * abstract *;
 [A]WO2005050730  (UNIV MAGDEBURG TECH [DE], et al) [A] 1-14 * abstract *;
 [A]US2005130341  (FURUKAWA TOSHIHARU [US], et al) [A] 1-14* abstract *;
 [XY]WO2005076381  (IBM [US], et al) [X] 1-4,8,10-12,14 * paragraphs [0028] - [0031]; figures 2,3 * * paragraphs [0033] , [0034]; figures 6,7 * [Y] 5,6,13;
 [X]WO2005117131  (KONINKL PHILIPS ELECTRONICS NV [NL], et al) [X] 1,2,4,7-12,14 * page 8, line 27 - page 10, line 10; figures 1,2 *
by applicantUS2004005769
 WO2005076381
 WO2005117131
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.