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EP1981069
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EP About this file: EP1981069
| EP1981069 - Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 06.06.2014 Database last updated on 17.07.2024 | Most recent event Tooltip | 06.06.2014 | Application deemed to be withdrawn | published on 09.07.2014 [2014/28] | Applicant(s) | For all designated states Sumitomo Electric Industries, Ltd. 5-33 Kitahama 4-chome, Chuo-ku Osaka-shi, Osaka 541-0041 / JP | [2008/42] | Inventor(s) | 01 /
Ueno, Masaki Itami Works of Sumitomo Electric Industries, Ltd. 1-1, Koyakita 1-chome Itami-shi Hyogo 664-0016 / JP | 02 /
Saitoh, Yu Itami Works of Sumitomo Electric Industries, Ltd. 1-1, Koyakita 1-chome Itami-shi Hyogo 664-0016 / JP | [2008/42] | Representative(s) | Grünecker Patent- und Rechtsanwälte PartG mbB Leopoldstrasse 4 80802 München / DE | [N/P] |
| Former [2008/42] | Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät Leopoldstrasse 4 80802 München / DE | Application number, filing date | 08003392.1 | 25.02.2008 | [2008/42] | Priority number, date | JP20070104027 | 11.04.2007 Original published format: JP 2007104027 | [2008/42] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1981069 | Date: | 15.10.2008 | Language: | EN | [2008/42] | Type: | A3 Search report | No.: | EP1981069 | Date: | 26.06.2013 | Language: | EN | [2013/26] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 29.05.2013 | Classification | IPC: | H01L21/205, H01L21/02, C23C16/30, // H01L29/872 | [2013/26] | CPC: |
H01L21/02576 (EP,US);
B82Y20/00 (EP,US);
C23C16/303 (EP,US);
H01L21/02389 (EP,US);
H01L21/02458 (EP,US);
H01L21/02505 (EP,US);
H01L21/0254 (EP,US);
H01L21/0257 (EP,US);
H01L21/0262 (EP,US);
H01L29/66212 (EP,US);
H01L29/66462 (EP,US);
H01L29/7786 (EP,US);
H01L29/872 (EP,US);
H01L33/0075 (EP,US);
H01L33/325 (EP,US);
H01L29/2003 (EP,US);
H01S2304/04 (EP,US);
H01S5/2009 (EP,US);
H01S5/305 (EP,US);
H01S5/3054 (EP,US);
H01S5/3211 (EP,US);
H01S5/34333 (EP,US)
(-)
|
| Former IPC [2008/42] | H01L21/205 | Designated contracting states | (deleted) [2014/10] |
| Former [2008/42] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR | Title | German: | Verfahren zur Herstellung eines Gruppe-III-V-Verbindungshalbleiters, Schottky-Barrierendiode, Lichtemissionsdiode, Laserdiode und Herstellungsverfahren für die Dioden | [2008/42] | English: | Method of producing group III-V compound semiconductor, Schottky barrier diode, light emitting diode, laser diode, and method of fabricating the diodes | [2008/42] | French: | Procédé de production de semi-conducteur de composant de groupe III-V, diode à barrière schottky, diode électroluminescente, et procédé de fabrication de diodes | [2008/42] | Examination procedure | 25.02.2008 | Examination requested [2008/42] | 03.01.2014 | Application deemed to be withdrawn, date of legal effect [2014/28] | 03.02.2014 | Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time [2014/28] | Fees paid | Renewal fee | 26.02.2010 | Renewal fee patent year 03 | 25.02.2011 | Renewal fee patent year 04 | 28.02.2012 | Renewal fee patent year 05 | 26.02.2013 | Renewal fee patent year 06 | Penalty fee | Additional fee for renewal fee | 28.02.2014 | 07 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [I]US2006047132 (SHENAI-KHATKHATE DEODATTA V [US], et al) [I] 1-16 * the whole document *; | [A]EP1633003 (SUMITOMO ELECTRIC INDUSTRIES [JP]) [A] 8-10 * paragraph [0042] *; | [A]US2005283016 (TSUDERA TAKANOBU [JP], et al) [A] 1-4 * the whole document *; | [A]US2006075959 (MATSUBARA MASANOBU [JP], et al) [A] 1-4 * the whole document * | [A] - DUPUIS R D, "Epitaxial growth of III-V nitride semiconductors by metalorganic chemical vapor deposition", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, (1997), vol. 178, no. 1-2, doi:10.1016/S0022-0248(97)00079-1, ISSN 0022-0248, pages 56 - 73, XP004084975 [A] 1-7,11,12 * pages 62-63, chapter '3.1.4 Doping' * DOI: http://dx.doi.org/10.1016/S0022-0248(97)00079-1 | [A] - Kuech, Jensen, "OMVPE of Compound Semiconductors", Kuech, Jensen, Vossen, Kern, Thin Film Processes II, Academic Press, (1991), pages 369 - 432, ISBN 0-12-728251-3, XP009169713 [A] 1-7,11,12 * pages 427-430, chapter IX.C.1 * | by applicant | JP2006342101 |