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EP1978562
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EP About this file: EP1978562
| EP1978562 - Trench gate MOSFET and method of manufacturing the same [Right-click to bookmark this link] | Status | The application has been refused Status updated on 09.10.2015 Database last updated on 13.07.2024 | Most recent event Tooltip | 09.10.2015 | Refusal of application | published on 11.11.2015 [2015/46] | Applicant(s) | For all designated states Vishay-Siliconix 2201 Laurelwood Road Santa Clara California 95054 / US | [2008/41] | Inventor(s) | 01 /
Li, Jian 822 Los Robles Avenue Palo Alto, CA 94306 / US | 02 /
Chen, Kuo-In 1673 Newcastle Drive Los Altos, CA 94024 / US | 03 /
Terril, Kyle 3385 Londonberry Drive Santa Clara, CA 95050 / US | [2008/41] | Representative(s) | Richards, John, et al Ladas & Parry LLP Temple Chambers 3-7 Temple Avenue London EC4Y 0DA / GB | [N/P] |
| Former [2012/24] | Richards, John, et al Ladas & Parry LLP Dachauerstrasse 37 80335 München / DE | ||
| Former [2008/41] | Ebner von Eschenbach, Jennifer, et al Ladas & Parry LLP Dachauerstrasse 37 80335 München / DE | Application number, filing date | 08006487.6 | 31.03.2008 | [2008/41] | Priority number, date | US20070921792P | 03.04.2007 Original published format: US 921792 P | US20080015723 | 17.01.2008 Original published format: US 15723 | [2008/41] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP1978562 | Date: | 08.10.2008 | Language: | EN | [2008/41] | Type: | A3 Search report | No.: | EP1978562 | Date: | 13.06.2012 | Language: | EN | [2012/24] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 11.05.2012 | Classification | IPC: | H01L29/78, H01L29/417, H01L29/10, H01L21/336, // H01L29/45, H01L29/423, H01L29/49 | [2012/24] | CPC: |
H01L29/66734 (EP,US);
H01L29/1095 (EP,US);
H01L29/41766 (EP,US);
H01L29/66719 (EP,US);
H01L29/66727 (EP,US);
H01L29/7813 (EP,US);
|
| Former IPC [2008/41] | H01L29/78, H01L29/417, H01L29/10, H01L21/336, H01L29/45, H01L29/423, H01L29/49, // H01L29/45, H01L29/423, H01L29/49 | Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR [2008/41] | Title | German: | MOSFET mit Graben-Gate und Verfahren zu dessen Herstellung | [2008/41] | English: | Trench gate MOSFET and method of manufacturing the same | [2008/41] | French: | Transistor à grille en tranchée et son procédé de fabrication | [2008/41] | Examination procedure | 12.12.2012 | Amendment by applicant (claims and/or description) | 12.12.2012 | Examination requested [2013/04] | 21.08.2013 | Despatch of a communication from the examining division (Time limit: M06) | 26.02.2014 | Reply to a communication from the examining division | 11.06.2015 | Cancellation of oral proceeding that was planned for 30.06.2015 | 22.06.2015 | Despatch of communication that the application is refused, reason: substantive examination [2015/46] | 30.06.2015 | Date of oral proceedings (cancelled) | 02.07.2015 | Application refused, date of legal effect [2015/46] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 21.08.2013 | Fees paid | Renewal fee | 25.03.2010 | Renewal fee patent year 03 | 29.03.2011 | Renewal fee patent year 04 | 26.03.2012 | Renewal fee patent year 05 | 27.03.2013 | Renewal fee patent year 06 | 27.03.2014 | Renewal fee patent year 07 | 27.03.2015 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XY]WO2007002857 (FAIRCHILD SEMICONDUCTOR [US]; GREBS THOMAS E [US]; RIDLEY RODNEY S [US) [X] 1-10,13-17,19,20 * figures 1, 7 * * paragraph [0046] - paragraph [0047]; figures 5D-5F * * paragraph [0079]; figures 11A-11N * * paragraph [0081] - paragraph [0085] * * paragraph [0090] - paragraph [0092] * [Y] 11,12,18; | [XI]US2006267090 (SAPP STEVEN [US] ET AL) [X] 15-17,19,20 * paragraph [0112] - paragraph [0116]; figures 23A-23I,24A-24I * [I] 18; | [I]EP0620588 (PHILIPS ELECTRONICS UK LTD [GB]; KONINKL PHILIPS ELECTRONICS NV [NL]) [I] 15-20 * page 6, line 29 - page 9, line 3; figures 1-8 *; | [Y]US2004021174 (KOBAYASHI KENYA [JP]) [Y] 11,12 * paragraph [0009]; figure 1 *; | [Y]US2006014349 (WILLIAMS RICHARD K [US] ET AL) [Y] 18 * paragraph [0139]; figure 23G * |