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Extract from the Register of European Patents

EP About this file: EP2037484

EP2037484 - Semiconductor processing part having apertures with deposited coatings and a method for forming the same [Right-click to bookmark this link]
Former [2009/12]Semiconductor processing parts having apertures with deposited coatings and methods for forming the same
[2010/21]
StatusNo opposition filed within time limit
Status updated on  12.08.2011
Database last updated on 03.10.2024
Most recent event   Tooltip12.08.2011No opposition filed within time limitpublished on 14.09.2011  [2011/37]
Applicant(s)For all designated states
ASM INTERNATIONAL N.V.
Jan van Eycklaan 10
3723 BC Bilthoven / NL
[2009/12]
Inventor(s)01 / Kuznetsov, Vladimir
Birstumerraklaan 11
3444 TA Utrecht / NL
 [2009/12]
Representative(s)polypatent
Patentanwälte
An den Gärten 7
51491 Overath / DE
[N/P]
Former [2010/40]Polypatent
Postfach 11 07
51482 Overath / DE
Former [2010/02]Polypatent
Postfach 11 07
51482 Overath / DE
Former [2009/12]Polypatent
Braunsberger Feld 29
51429 Bergisch Gladbach / DE
Application number, filing date08014738.220.08.2008
[2009/12]
Priority number, dateUS2007085641817.09.2007         Original published format: US 856418
[2009/12]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP2037484
Date:18.03.2009
Language:EN
[2009/12]
Type: A3 Search report 
No.:EP2037484
Date:20.05.2009
[2009/21]
Type: B1 Patent specification 
No.:EP2037484
Date:06.10.2010
Language:EN
[2010/40]
Search report(s)(Supplementary) European search report - dispatched on:EP22.04.2009
ClassificationIPC:H01L21/00, B01J4/00
[2009/12]
CPC:
C30B23/005 (EP,US); C23C16/045 (EP,US); C23C16/4404 (EP,US);
C23C16/45565 (EP,US); C30B35/002 (EP,US); H01L21/67103 (EP,US);
H01L21/67109 (EP,US) (-)
Designated contracting statesDE,   FR,   NL [2010/04]
Former [2009/12]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MT,  NL,  NO,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Halbleiterverarbeitungsteil mit Öffnungen mit einer aufgetragenen Beschichtung und ein Herstellungsverfahren dafür[2010/21]
English:Semiconductor processing part having apertures with deposited coatings and a method for forming the same[2010/21]
French:Pièce de traitement à semi-conducteur disposant d'ouvertures avec des revêtements déposés et son procédé de formation[2010/21]
Former [2009/12]Halbleiterverarbeitungsteile mit Öffnungen mit aufgetragener Beschichtung und Bildungsverfahren dafür
Former [2009/12]Semiconductor processing parts having apertures with deposited coatings and methods for forming the same
Former [2009/12]Pièces de traitement à semi-conducteur disposant d'ouvertures avec des revêtements déposés et leurs procédés de formation
Examination procedure11.11.2009Amendment by applicant (claims and/or description)
11.11.2009Examination requested  [2009/52]
21.11.2009Loss of particular rights, legal effect: designated state(s)
17.12.2009Despatch of a communication from the examining division (Time limit: M04)
04.01.2010Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NO, PL, PT, RO, SE, SI, SK, TR
26.03.2010Reply to a communication from the examining division
18.05.2010Communication of intention to grant the patent
17.08.2010Fee for grant paid
17.08.2010Fee for publishing/printing paid
Opposition(s)07.07.2011No opposition filed within time limit [2011/37]
Fees paidRenewal fee
17.08.2010Renewal fee patent year 03
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Documents cited:Search[A]JP2005294559  (JAPAN ADV INST SCIENCE & TECH) [A] 1-7,13-23 * abstract *;
 [A]US2005178748  (BUCHBERGER DOUGLAS A JR [US], et al) [A] 1-7,13-23 * paragraphs [0152] , [0153] , [0167] - paragraph [0170]; figures 12,19,20 *
by applicantJP2005294559
 US2005178748
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.