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Extract from the Register of European Patents

EP About this file: EP2045371

EP2045371 - Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  14.02.2014
Database last updated on 02.07.2024
Most recent event   Tooltip14.02.2014No opposition filed within time limitpublished on 19.03.2014  [2014/12]
Applicant(s)For all designated states
Siltron Inc.
274, Imsoo-Dong Gumi-city, Gyeonsangbuk-Do
730-724 / KR
[2009/15]
Inventor(s)01 / Hong, Young-Ho
A-408, Bangbae Acro Tower
923-6 Bangbae 1-dong
Seocho-gu
Seoul 137-843 / KR
02 / Cho, Hyon-Jong
204-1203, Sinnari 2-cha Apt., Okgye-dong, Gumi-si
Gyeonbuk 730-380 / KR
03 / Lee, Sung-Young
Ga-501, Saetbyeol Apt.
39, Songjeong-dong, Gumi-si
Gyeongbuk 730-913 / KR
04 / Shin, Seung-Ho
48-38 bunji, Singli-2dong, Yeongdeungpo-gu
Seoul 150-838 / KR
05 / Lee, Hong-Woo
201-403, Greenvill Apt.
220, Doryang-dong, Gumi-si
Gyeongbuk 730-020 / KR
 [2012/50]
Former [2009/15]01 / Hong, Young-Ho
A-408, Bangbae Acro Tower 923-6 Bangbae 1-dong Seocho-gu
Seoul 137-843 / KR
02 / Cho, Hyon-Jong
204-1203, Sinnari 2-cha Apt., Okgye-dong, Gumi-si
Gyeonbuk 730-380 / KR
03 / Lee, Sung-Young
Ga-501, Saetbyeol Apt., 39, Songjeong-dong, Gumi-si
Gyeongbuk 730-913 / KR
04 / Shin, Seung-Ho
48-38 bunji, Singil-2dong, Yeongdeungpo-gu
Seoul 150-838 / KR
05 / Lee, Hong-Woo
201-403, Greenvill Apt., 220, Doryang-dong, Gumi-si
Gyeongbuk 730-020 / KR
Representative(s)Stolmár, Matthias, et al
Stolmár & Partner
Blumenstrasse 17
80331 München / DE
[2013/36]
Former [2009/32]Scheele, Friedrich, et al
Stolmár Scheele & Partner Patentanwälte Blumenstrasse 17
80331 München / DE
Former [2009/15]Scheele, Friedrich, et al
Stolmár Scheele Hinkelmann Blumenstrasse 17
80331 München / DE
Application number, filing date08017323.001.10.2008
[2009/15]
Priority number, dateKR2007009980404.10.2007         Original published format: KR 20070099804
[2009/15]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP2045371
Date:08.04.2009
Language:EN
[2009/15]
Type: A3 Search report 
No.:EP2045371
Date:22.09.2010
[2010/38]
Type: B1 Patent specification 
No.:EP2045371
Date:10.04.2013
Language:EN
[2013/15]
Search report(s)(Supplementary) European search report - dispatched on:EP25.08.2010
ClassificationIPC:C30B15/20, C30B29/06, C30B15/14
[2009/15]
CPC:
C30B15/14 (EP,US); C30B15/20 (KR); C30B15/203 (EP,US);
C30B15/206 (EP,US); C30B29/06 (EP,US); H01L21/20 (KR);
Y10T117/1032 (US); Y10T117/1068 (US) (-)
Designated contracting statesDE,   FR,   IT [2011/21]
Former [2009/15]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MT,  NL,  NO,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Verfahren und Vorrichtung zur Herstellung eines Einkristallblock-Halbleiters mit sehr wenigen Fehlern[2009/15]
English:Method and apparatus for manufacturing an ultra low defect semiconductor single crystalline ingot[2009/15]
French:Procédé et appareil pour fabriquer un lingot monocristallin à semi-conducteur avec très peu de défauts[2009/15]
Examination procedure22.03.2011Amendment by applicant (claims and/or description)
22.03.2011Examination requested  [2011/18]
30.03.2011Loss of particular rights, legal effect: designated state(s)
20.05.2011Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, GB, GR, HR, HU, IE, IS, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR
15.05.2012Despatch of a communication from the examining division (Time limit: M04)
20.09.2012Reply to a communication from the examining division
19.11.2012Communication of intention to grant the patent
26.02.2013Fee for grant paid
26.02.2013Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  15.05.2012
Opposition(s)13.01.2014No opposition filed within time limit [2014/12]
Fees paidRenewal fee
28.10.2010Renewal fee patent year 03
31.10.2011Renewal fee patent year 04
30.10.2012Renewal fee patent year 05
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Documents cited:Search[XA]EP1347083  (SHINETSU HANDOTAI KK [JP]) [X] 1-3,6-8 * abstract * * paragraphs [0058] , [0059] , [0063] - [0065] - [0067] * * figure 2 * [A] 4,5,9;
 [XA]EP1650332  (SHINETSU HANDOTAI KK [JP]) [X] 1,2,4,6,7 * abstract * * paragraphs [0043] , [0044] , [0050] , [0055] * * figures 3-5,7,8,10,11 * [A] 3,5,8,9;
 [X]US2007151505  (CHO HYON-JONG [KR]) [X] 1,2,4,6,7 * paragraphs [0026] , [0048] , [0063] * * abstract *;
 [X]US2006016387  (YOKOYAMA TAKASHI [JP], et al) [X] 1,2,6,7 * paragraphs [0180] , [0182] , [0183] * * abstract * * figure 15 *
by applicantJP2005015296
 EP1347083
 EP1650332
 US2006016387
 US2007151505
 JP2004137093
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.