EP2015325 - A porous semiconductor film on a substrate [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 30.11.2012 Database last updated on 12.07.2024 | Most recent event Tooltip | 30.11.2012 | Withdrawal of application | published on 02.01.2013 [2013/01] | Applicant(s) | For all designated states Sony Deutschland GmbH Kemperplatz 1 10785 Berlin / DE | For all designated states Sony Corporation 6-7-35 Kitashinagawa Shinagawa-ku Tokyo 141-0001 / JP | [N/P] |
Former [2009/03] | For all designated states Sony Deutschland GmbH Kemperplatz 1 10785 Berlin / DE | ||
For all designated states Sony Corporation 6-7-35 Kitashinagawa Shinagawa-ku Tokyo 141-0001 / JP | Inventor(s) | 01 /
Duerr, Michael Sony Deutschland GmbH Stuttgart Technology Center Hedelfinger Strasse 61 Stuttgart / DE | 02 /
Nelles, Gabriele Sony Deutschland GmbH Stuttgart Technology Center Hedelfinger Strasse 61 Stuttgart / DE | 03 /
Yasuda, Akio Sony Deutschland GmbH Stuttgart Technology Center Hedelfinger Strasse 61 Stuttgart / DE | 04 /
Suzuki, Yusuke Sony Corporation 6-7-35, Kitashinagawa Shinagawa-ku Toyko 141-0001 / JP | 05 /
Noda, Kazuhiro Sony Corporation 6-7-35, Kitashinagawa Shinagawa-ku Toyko 141-0001 / JP | [2009/03] | Representative(s) | Appelt, Christian W. Boehmert & Boehmert Anwaltspartnerschaft mbB Pettenkoferstrasse 22 80336 München / DE | [N/P] |
Former [2009/03] | Appelt, Christian W. Forrester & Boehmert Pettenkoferstrasse 20-22 80336 München / DE | Application number, filing date | 08018079.7 | 13.12.2006 | [2009/03] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP2015325 | Date: | 14.01.2009 | Language: | EN | [2009/03] | Type: | A3 Search report | No.: | EP2015325 | Date: | 25.11.2009 | [2009/48] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 26.10.2009 | Classification | IPC: | H01G9/20 | [2009/03] | CPC: |
H01G9/2095 (EP,US);
H01G9/2031 (EP,US);
H01G9/2059 (EP,US);
H10K71/80 (EP,US);
Y02E10/542 (EP,US)
| Designated contracting states | DE, FR, GB [2010/30] |
Former [2009/03] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR | Title | German: | Poröse Halbleiterschicht auf einem Substrat | [2009/03] | English: | A porous semiconductor film on a substrate | [2009/03] | French: | Film à semi-conducteur poreux sur un substrat | [2009/03] | Examination procedure | 15.10.2008 | Examination requested [2009/03] | 29.04.2010 | Despatch of a communication from the examining division (Time limit: M04) | 16.08.2010 | Reply to a communication from the examining division | 23.11.2012 | Application withdrawn by applicant [2013/01] | 23.11.2012 | Cancellation of oral proceeding that was planned for 10.12.2012 | 10.12.2012 | Date of oral proceedings (cancelled) | Parent application(s) Tooltip | EP06025828.2 / EP1933343 | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20060025828) is 10.07.2008 | Fees paid | Renewal fee | 22.10.2008 | Renewal fee patent year 03 | 11.12.2009 | Renewal fee patent year 04 | 23.12.2010 | Renewal fee patent year 05 | 23.12.2011 | Renewal fee patent year 06 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]EP1589548 (SONY DEUTSCHLAND GMBH [DE]) [X] 1-4 * paragraphs [0008] - [0032]; figure 1 *; | [DX]WO2005104153 (SONY INT EUROPE GMBH [DE], et al) [DX] 1-4; | [X]JP2006313693 (DAINIPPON PRINTING CO LTD) [X] 1-4 * abstract * * paragraphs [0086] - [0089] - [0103] - [0105] - [0109] , [0111] , [0114] - [0117] - [0119] , [0121] , [0122] , [0125] - [0127] ** paragraphs [0154] , [0155] , [0159]; figures 1-3 * | by applicant | WO9116719 | WO0072373 | WO2005104153 | - B.O-REGAN; M. GRÄTZEL, NATURE, (1991), vol. 353, page 737 | - H. LINDSTR6M ET AL., "A new method for manufacturing nanostructured electrodes on plastic substrates", NANO LETT., (2001), vol. 1, page 97 | - H. LINDSTRÖM ET AL., "A new method to make dye-sensitized nanocrystalline solar cells at room temperature", J. PHOTOCHEM. PHOTOBIOL. A, (2001), vol. 145, page 107 | - G. BOSCHLOO ET AL., "Optimization of dye-sensitized solar cells prepared by compression method", J. PHOTOCHEM. PHOTOBIOL. A, (2002), vol. 148, page 11 | - D. ZHANG ET AL., "Low-temperature fabrication of efficient porous titania photoelectrodes by hydrothermal crystallization at the solidlgas interface", ADV. MATER., (2003), vol. 15, page 814 | - D. ZHANG ET AL., "Low temperature synthesis of porous nanocrystalline Ti02 thick film for dye-sensitized solar cells by hydrothermal crystallization", CHEM. LETT., (2002), vol. 9, page 874 | - S. A. HAGUE ET AL., "Flexible dye-sensitized nanocrystalline semiconductor solar cells", CHEM. COMM., (2003), vol. 24, page 3008 |