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Extract from the Register of European Patents

EP About this file: EP2015325

EP2015325 - A porous semiconductor film on a substrate [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  30.11.2012
Database last updated on 12.07.2024
Most recent event   Tooltip30.11.2012Withdrawal of applicationpublished on 02.01.2013  [2013/01]
Applicant(s)For all designated states
Sony Deutschland GmbH
Kemperplatz 1
10785 Berlin / DE
For all designated states
Sony Corporation
6-7-35 Kitashinagawa
Shinagawa-ku
Tokyo 141-0001 / JP
[N/P]
Former [2009/03]For all designated states
Sony Deutschland GmbH
Kemperplatz 1
10785 Berlin / DE
For all designated states
Sony Corporation
6-7-35 Kitashinagawa Shinagawa-ku
Tokyo 141-0001 / JP
Inventor(s)01 / Duerr, Michael
Sony Deutschland GmbH Stuttgart Technology Center Hedelfinger Strasse 61
Stuttgart / DE
02 / Nelles, Gabriele
Sony Deutschland GmbH Stuttgart Technology Center Hedelfinger Strasse 61
Stuttgart / DE
03 / Yasuda, Akio
Sony Deutschland GmbH Stuttgart Technology Center Hedelfinger Strasse 61
Stuttgart / DE
04 / Suzuki, Yusuke
Sony Corporation 6-7-35, Kitashinagawa
Shinagawa-ku Toyko 141-0001 / JP
05 / Noda, Kazuhiro
Sony Corporation 6-7-35, Kitashinagawa
Shinagawa-ku Toyko 141-0001 / JP
 [2009/03]
Representative(s)Appelt, Christian W.
Boehmert & Boehmert
Anwaltspartnerschaft mbB
Pettenkoferstrasse 22
80336 München / DE
[N/P]
Former [2009/03]Appelt, Christian W.
Forrester & Boehmert Pettenkoferstrasse 20-22
80336 München / DE
Application number, filing date08018079.713.12.2006
[2009/03]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP2015325
Date:14.01.2009
Language:EN
[2009/03]
Type: A3 Search report 
No.:EP2015325
Date:25.11.2009
[2009/48]
Search report(s)(Supplementary) European search report - dispatched on:EP26.10.2009
ClassificationIPC:H01G9/20
[2009/03]
CPC:
H01G9/2095 (EP,US); H01G9/2031 (EP,US); H01G9/2059 (EP,US);
H10K71/80 (EP,US); Y02E10/542 (EP,US)
Designated contracting statesDE,   FR,   GB [2010/30]
Former [2009/03]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  NL,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Poröse Halbleiterschicht auf einem Substrat[2009/03]
English:A porous semiconductor film on a substrate[2009/03]
French:Film à semi-conducteur poreux sur un substrat[2009/03]
Examination procedure15.10.2008Examination requested  [2009/03]
29.04.2010Despatch of a communication from the examining division (Time limit: M04)
16.08.2010Reply to a communication from the examining division
23.11.2012Application withdrawn by applicant  [2013/01]
23.11.2012Cancellation of oral proceeding that was planned for 10.12.2012
10.12.2012Date of oral proceedings (cancelled)
Parent application(s)   TooltipEP06025828.2  / EP1933343
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20060025828) is  10.07.2008
Fees paidRenewal fee
22.10.2008Renewal fee patent year 03
11.12.2009Renewal fee patent year 04
23.12.2010Renewal fee patent year 05
23.12.2011Renewal fee patent year 06
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See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[X]EP1589548  (SONY DEUTSCHLAND GMBH [DE]) [X] 1-4 * paragraphs [0008] - [0032]; figure 1 *;
 [DX]WO2005104153  (SONY INT EUROPE GMBH [DE], et al) [DX] 1-4;
 [X]JP2006313693  (DAINIPPON PRINTING CO LTD) [X] 1-4 * abstract * * paragraphs [0086] - [0089] - [0103] - [0105] - [0109] , [0111] , [0114] - [0117] - [0119] , [0121] , [0122] , [0125] - [0127] ** paragraphs [0154] , [0155] , [0159]; figures 1-3 *
by applicantWO9116719
 WO0072373
 WO2005104153
    - B.O-REGAN; M. GRÄTZEL, NATURE, (1991), vol. 353, page 737
    - H. LINDSTR6M ET AL., "A new method for manufacturing nanostructured electrodes on plastic substrates", NANO LETT., (2001), vol. 1, page 97
    - H. LINDSTRÖM ET AL., "A new method to make dye-sensitized nanocrystalline solar cells at room temperature", J. PHOTOCHEM. PHOTOBIOL. A, (2001), vol. 145, page 107
    - G. BOSCHLOO ET AL., "Optimization of dye-sensitized solar cells prepared by compression method", J. PHOTOCHEM. PHOTOBIOL. A, (2002), vol. 148, page 11
    - D. ZHANG ET AL., "Low-temperature fabrication of efficient porous titania photoelectrodes by hydrothermal crystallization at the solidlgas interface", ADV. MATER., (2003), vol. 15, page 814
    - D. ZHANG ET AL., "Low temperature synthesis of porous nanocrystalline Ti02 thick film for dye-sensitized solar cells by hydrothermal crystallization", CHEM. LETT., (2002), vol. 9, page 874
    - S. A. HAGUE ET AL., "Flexible dye-sensitized nanocrystalline semiconductor solar cells", CHEM. COMM., (2003), vol. 24, page 3008
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.