EP2068366 - Semiconductor device and manufacturing method thereof [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 27.05.2016 Database last updated on 15.08.2024 | Most recent event Tooltip | 27.05.2016 | Application deemed to be withdrawn | published on 29.06.2016 [2016/26] | Applicant(s) | For all designated states Semiconductor Energy Laboratory Co, Ltd. 398, Hase Atsugi-shi, Kanagawa, 243-0036 / JP | [N/P] |
Former [2009/24] | For all designated states Semiconductor Energy Laboratory Co, Ltd. 398, Hase Atsugi-shi, Kanagawa 243-0036 / JP | Inventor(s) | 01 /
Yamazaki, Shunpei c/o Semiconductor Energy Laboratory Co., Ltd. 398, Hase Atsugi-Shi Kanagawa-ken 243-0036 / JP | [2009/24] | Representative(s) | Grünecker Patent- und Rechtsanwälte PartG mbB Leopoldstraße 4 80802 München / DE | [N/P] |
Former [2009/24] | Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät Leopoldstrasse 4 80802 München / DE | Application number, filing date | 08020904.2 | 02.12.2008 | [2009/24] | Priority number, date | JP20070312762 | 03.12.2007 Original published format: JP 2007312762 | [2009/24] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP2068366 | Date: | 10.06.2009 | Language: | EN | [2009/24] | Type: | A3 Search report | No.: | EP2068366 | Date: | 01.07.2015 | Language: | EN | [2015/27] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 02.06.2015 | Classification | IPC: | H01L29/786, H01L21/336, H01L27/12, H01L21/20, H01L29/66, H01L29/06 | [2015/27] | CPC: |
H01L29/66712 (EP,KR,US);
H01L29/78603 (EP,KR,US);
H01L21/2007 (EP,KR,US);
H01L21/76254 (EP,KR,US);
H01L27/1214 (KR);
H01L27/124 (EP,KR,US);
H01L27/1266 (EP,KR,US);
H01L29/0696 (EP,KR,US);
H01L29/66772 (EP,KR,US);
H01L29/7812 (EP,KR,US)
(-)
|
Former IPC [2009/24] | H01L29/786, H01L21/336 | Designated contracting states | [2016/10] |
Former [2009/24] | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR | Title | German: | Halbleitervorrichtung und Herstellungsverfahren | [2009/24] | English: | Semiconductor device and manufacturing method thereof | [2009/24] | French: | Dispositif semiconducteur et méthode pour sa fabrication | [2009/24] | Examination procedure | 05.01.2016 | Application deemed to be withdrawn, date of legal effect [2016/26] | 09.02.2016 | Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time [2016/26] | Fees paid | Renewal fee | 15.12.2010 | Renewal fee patent year 03 | 12.12.2011 | Renewal fee patent year 04 | 11.12.2012 | Renewal fee patent year 05 | 12.12.2013 | Renewal fee patent year 06 | 11.12.2014 | Renewal fee patent year 07 | Penalty fee | Additional fee for renewal fee | 31.12.2015 | 08   M06   Not yet paid |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [IA]JPS5878455 (NIPPON ELECTRIC CO) [I] 1-10 * abstract * * figures 1A-1G * [A] 11-20; | [A]US6380046 (YAMAZAKI SHUNPEI [JP]) [A] 1-20 * abstract ** figures 1A-1C,2A-2D,3A-3D,4A-4D *; | [A]US2005179061 (JANG JAE-HOON [KR], et al) [A] 1-20 * abstract * * figures 10-17 *; | [I]WO2006132392 (CASIO COMPUTER CO LTD [JP], et al) [I] 1-10 * abstract * * figures 3,4 * * page 22, line 4 - page 26, line 11 * | by applicant | JPH11163363 | JP2003110108 | JP2007312762 |