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Extract from the Register of European Patents

EP About this file: EP2068366

EP2068366 - Semiconductor device and manufacturing method thereof [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  27.05.2016
Database last updated on 15.08.2024
Most recent event   Tooltip27.05.2016Application deemed to be withdrawnpublished on 29.06.2016  [2016/26]
Applicant(s)For all designated states
Semiconductor Energy Laboratory Co, Ltd.
398, Hase
Atsugi-shi, Kanagawa, 243-0036 / JP
[N/P]
Former [2009/24]For all designated states
Semiconductor Energy Laboratory Co, Ltd.
398, Hase
Atsugi-shi, Kanagawa 243-0036 / JP
Inventor(s)01 / Yamazaki, Shunpei
c/o Semiconductor Energy Laboratory Co., Ltd. 398, Hase
Atsugi-Shi Kanagawa-ken 243-0036 / JP
 [2009/24]
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstraße 4
80802 München / DE
[N/P]
Former [2009/24]Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
Leopoldstrasse 4
80802 München / DE
Application number, filing date08020904.202.12.2008
[2009/24]
Priority number, dateJP2007031276203.12.2007         Original published format: JP 2007312762
[2009/24]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP2068366
Date:10.06.2009
Language:EN
[2009/24]
Type: A3 Search report 
No.:EP2068366
Date:01.07.2015
Language:EN
[2015/27]
Search report(s)(Supplementary) European search report - dispatched on:EP02.06.2015
ClassificationIPC:H01L29/786, H01L21/336, H01L27/12, H01L21/20, H01L29/66, H01L29/06
[2015/27]
CPC:
H01L29/66712 (EP,KR,US); H01L29/78603 (EP,KR,US); H01L21/2007 (EP,KR,US);
H01L21/76254 (EP,KR,US); H01L27/1214 (KR); H01L27/124 (EP,KR,US);
H01L27/1266 (EP,KR,US); H01L29/0696 (EP,KR,US); H01L29/66772 (EP,KR,US);
H01L29/7812 (EP,KR,US) (-)
Former IPC [2009/24]H01L29/786, H01L21/336
Designated contracting states[2016/10]
Former [2009/24]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MT,  NL,  NO,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:Halbleitervorrichtung und Herstellungsverfahren[2009/24]
English:Semiconductor device and manufacturing method thereof[2009/24]
French:Dispositif semiconducteur et méthode pour sa fabrication[2009/24]
Examination procedure05.01.2016Application deemed to be withdrawn, date of legal effect  [2016/26]
09.02.2016Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time  [2016/26]
Fees paidRenewal fee
15.12.2010Renewal fee patent year 03
12.12.2011Renewal fee patent year 04
11.12.2012Renewal fee patent year 05
12.12.2013Renewal fee patent year 06
11.12.2014Renewal fee patent year 07
Penalty fee
Additional fee for renewal fee
31.12.201508   M06   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[IA]JPS5878455  (NIPPON ELECTRIC CO) [I] 1-10 * abstract * * figures 1A-1G * [A] 11-20;
 [A]US6380046  (YAMAZAKI SHUNPEI [JP]) [A] 1-20 * abstract ** figures 1A-1C,2A-2D,3A-3D,4A-4D *;
 [A]US2005179061  (JANG JAE-HOON [KR], et al) [A] 1-20 * abstract * * figures 10-17 *;
 [I]WO2006132392  (CASIO COMPUTER CO LTD [JP], et al) [I] 1-10 * abstract * * figures 3,4 * * page 22, line 4 - page 26, line 11 *
by applicantJPH11163363
 JP2003110108
 JP2007312762
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.