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EP2009681
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EP About this file: EP2009681
| EP2009681 - Methods for high temperature etching a high-k material gate structure [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 08.07.2011 Database last updated on 19.10.2024 | Most recent event Tooltip | 08.07.2011 | Application deemed to be withdrawn | published on 10.08.2011 [2011/32] | Applicant(s) | For all designated states Applied Materials, Inc. 3050 Bowers Avenue Santa Clara, CA 95054 / US | [N/P] |
| Former [2009/01] | For all designated states Applied Materials, Inc. 3050 Bowers Avenue Santa Clara, CA 95054 / US | Inventor(s) | 01 /
Liu, Wei 5035 Moorpark Avenue San Jose, CA 95129 / US | 02 /
Matsusue, Ellchi Toriasu 202 2-20-04 Misatodai Narit Chiba 286-0013 / JP | 03 /
Shen, Meihua 694 Perry Common Fremont, CA 94539 / US | 04 /
Deshmukh, Shashank 2168 Pettigrew Drive San Jose, CA 95148 / US | 05 /
Kawase, Yohei 4-1C-610 Yukarigaoka Sakura-shi Chiba 285-0858 / JP | 06 /
Phan, Anh-Kiet Quang 1288 Trestlewood Lane San Jose, CA 95138 / US | 07 /
Palagashvili, David 49 Showers Drive K431 Mountain View, CA 94040 / US | 08 /
Willwerth, Michael D. 3847 Rincon Avenue Campbell, CA 95008 / US | 09 /
Shin, Jong I. 3585 Agate Court Santa Clara, CA 95051 / US | 10 /
Finch, Barrett 246 Bieber Drive San Jose, CA 95123 / US | [2009/01] | Representative(s) | Peterreins, Frank Fish & Richardson P.C. Highlight Business Towers Mies-van-der-Rohe-Strasse 8 80807 München / DE | [N/P] |
| Former [2009/01] | Peterreins, Frank Fish & Richardson P.C. Highlight BusinessTowers Mies-van-der-Rohe-Strasse 8 80807 München / DE | Application number, filing date | 08158919.4 | 25.06.2008 | [2009/01] | Priority number, date | US20070946581P | 27.06.2007 Original published format: US 946581 P | US20070987159P | 12.11.2007 Original published format: US 987159 P | [2009/01] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP2009681 | Date: | 31.12.2008 | Language: | EN | [2009/01] | Type: | A3 Search report | No.: | EP2009681 | Date: | 28.07.2010 | [2010/30] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 30.06.2010 | Classification | IPC: | H01L21/311, H01L21/3213 | [2010/30] | CPC: |
H01L21/31116 (EP,US);
H01L21/3065 (KR,US);
H01L21/31122 (EP,US);
H01L21/32137 (EP,US);
H01L29/40117 (EP,US)
|
| Former IPC [2009/01] | H01L21/311 | Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR [2009/01] | Title | German: | Verfahren zum Hochtemperaturätzen einer Gatestruktur aus Material mit hoher Dielektrizitätskonstante | [2009/01] | English: | Methods for high temperature etching a high-k material gate structure | [2009/01] | French: | Procédés de gravure à haute température d'une structure de porte en matériel K élevé | [2009/01] | Examination procedure | 21.10.2008 | Examination requested [2009/01] | 04.01.2011 | Application deemed to be withdrawn, date of legal effect [2011/32] | 15.03.2011 | Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2011/32] | Fees paid | Penalty fee | Additional fee for renewal fee | 30.06.2010 | 03 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XI]US5776356 (YOKOYAMA SEIICHI [JP], et al); | [A]US5863839 (OLSON DALE A [US], et al); | [A]US2005095783 (HASELDEN BARBARA A [US], et al); | [XA]US2006252265 (JIN GUANGXIANG [US], et al); | [XAI]US2007026611 (SAITO GO [JP], et al); | [XAI]US2007042601 (WANG XIKUN [US], et al) | by applicant | US2004198069 | US6806095 | US2007224813 | US2007249182 | US20070948376 | US20070777259 |