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Extract from the Register of European Patents

EP About this file: EP2131169

EP2131169 - Strain sensor with high gauge factor [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  20.05.2011
Database last updated on 15.06.2024
Most recent event   Tooltip20.05.2011Application deemed to be withdrawnpublished on 22.06.2011  [2011/25]
Applicant(s)For all designated states
Ecole Polytechnique
91128 Palaiseau Cedex / FR
For all designated states
UNIVERSITE DE GENEVE
24, rue du Général-Dufour
1211 Genève 4 / CH
For all designated states
Centre National de la Recherche Scientifique (C.N.R.S.)
3 rue Michel-Ange
75794 Paris Cedex 16 / FR
[N/P]
Former [2009/50]For all designated states
Ecole Polytechnique
91128 Palaiseau Cedex / FR
For all designated states
UNIVERSITE DE GENEVE
24, rue du Général-Dufour
1211 Genève 4 / CH
For all designated states
Centre National de La Recherche Scientifique-CNRS
3, rue Michel-Ange
75794 Paris Cedex 16 / FR
Inventor(s)01 / Rowe, Alistair
Residence de la Colline rue François Leroux
91400, ORSAY / FR
02 / Renner, Christoph
18, Upper Wimpole Street
LONDRES, W1G 6LX / GB
03 / Arscott, Steve
17 rue Nicot
59130, LAMBERSART / FR
 [2009/50]
Representative(s)Plasseraud IP
66, rue de la Chaussée d'Antin
75440 Paris Cedex 09 / FR
[N/P]
Former [2009/50]Cabinet Plasseraud
52, rue de la Victoire
75440 Paris Cedex 09 / FR
Application number, filing date08305233.205.06.2008
[2009/50]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP2131169
Date:09.12.2009
Language:EN
[2009/50]
Search report(s)(Supplementary) European search report - dispatched on:EP27.11.2008
ClassificationIPC:G01L1/22
[2009/50]
CPC:
G01L1/2293 (EP)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2009/50]
Extension statesALNot yet paid
BANot yet paid
MKNot yet paid
RSNot yet paid
TitleGerman:Belastungsmesser mit hohem K-Faktor[2009/50]
English:Strain sensor with high gauge factor[2009/50]
French:Capteur de contrainte à facteur de jauge élevé[2009/50]
Examination procedure25.05.2010Examination requested  [2010/26]
18.06.2010Despatch of a communication from the examining division (Time limit: M06)
29.12.2010Application deemed to be withdrawn, date of legal effect  [2011/25]
03.02.2011Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2011/25]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  18.06.2010
Fees paidRenewal fee
03.05.2010Renewal fee patent year 03
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Documents cited:Search[X]WO9942799  (HONEYWELL DATA INSTR INC [US]) [X] 1-15 * abstract * * figures 4a,4b * * page 1, line 21 - page 2, line 4 * * page 7, lines 11-29 * * claims 26,29,36 * * page 10, lines 5-11 *;
 [A]US3585415  (MULLER RICHARD S, et al) [A] 1-15 * column 2, lines 26-30 * * column 5, lines 30-41 * * claims 4,10 *;
 [A]US2005036905  (GOKTURK HALIT SUHA [US]) [A] 1-15 * paragraphs [0083] , [0084] * * paragraphs [0110] - [0112] *;
 [A]US4937550  (TAWADA YOSHIHISA [JP], et al) [A] 1-15 * abstract * * column 1, lines 24-32 *
 [A]  - STRITTMATTER R P ET AL, "Piezoelectrically enhanced capacitive strain sensors using GaN metal-insulator-semiconductor diodes", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (20031101), vol. 94, no. 9, ISSN 0021-8979, pages 5958 - 5963, XP012060586 [A] 1-15 * page 5961, paragraph B - page 5962 *

DOI:   http://dx.doi.org/10.1063/1.1611267
by applicantWO2007080259
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.