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Extract from the Register of European Patents

EP About this file: EP2122668

EP2122668 - SEMICONDUCTOR SUBSTRATE SUITABLE FOR THE REALISATION OF ELECTRONIC AND/ OR OPTOELECTRONIC DEVICES AND RELATED MANUFACTURING PROCESS [Right-click to bookmark this link]
Former [2009/48]SEMICONDUCTOR SUBSTRATE SUITABLE FOR THE REALISATION OF ELECTRONIC AND/ OR OPTOELECTRONIC DEVICES AND RELATIVE MANUFACTURING PROCESS
[2018/01]
StatusNo opposition filed within time limit
Status updated on  10.05.2019
Database last updated on 03.08.2024
FormerThe patent has been granted
Status updated on  01.06.2018
FormerGrant of patent is intended
Status updated on  25.05.2018
FormerExamination is in progress
Status updated on  04.05.2018
FormerGrant of patent is intended
Status updated on  21.12.2017
Most recent event   Tooltip09.07.2021Lapse of the patent in a contracting state
New state(s): HU		published on 11.08.2021  [2021/32]
Applicant(s)For all designated states
Consiglio Nazionale delle Ricerche
P. le Aldo Moro, 7
00185 Roma / IT
[2009/48]
Inventor(s)01 / D'ARRIGO, Giuseppe Alessio Maria
CNR
Istituto per la Microelettronica e Microsistemi
(IMM)
Stradale Primosole, 50
I-95121 Catania / IT
02 / LA VIA, Francesco
CNR
Istituto per la Microelettronica e Microsistemi
(IMM)
Stradale Primosole, 50
I-95121 Catania / IT
 [2018/27]
Former [2009/48]01 / D'ARRIGO, Giuseppe Alessio Maria
CNR Istituto per la Microelettronica e Microsistemi (IMM) Stradale Primosole, 50
I-95121 Catania / IT
02 / LA VIA, Francesco
CNR Istituto per la Microelettronica e Microsistemi (IMM) Stradale Primosole, 50
I-95121 Catania / IT
Representative(s)Ferrari, Barbara
Botti & Ferrari S.p.A.
Via Cappellini, 11
20124 Milano / IT
[N/P]
Former [2018/27]Ferrari, Barbara
Botti & Ferrari S.r.l. Via Cappellini, 11
20124 Milano / IT
Former [2009/48]Ferrari, Barbara
Botti & Ferrari S.r.l., Via Locatelli, 5
20124 Milano / IT
Application number, filing date08720195.017.01.2008
[2009/48]
WO2008IT00025
Priority number, dateIT2007MI0005617.01.2007         Original published format: IT MI20070056
[2009/48]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report
No.:WO2008087686
Date:24.07.2008
Language:EN
[2008/30]
Type: A2 Application without search report 
No.:EP2122668
Date:25.11.2009
Language:EN
The application published by WIPO in one of the EPO official languages on 24.07.2008 takes the place of the publication of the European patent application.
[2009/48]
Type: B1 Patent specification 
No.:EP2122668
Date:04.07.2018
Language:EN
[2018/27]
Search report(s)International search report - published on:EP24.12.2008
ClassificationIPC:H01L21/20
[2009/48]
CPC:
H01L21/02502 (EP,US); H01L21/02381 (EP,US); H01L21/02439 (EP,US);
H01L21/0245 (EP,US); H01L21/02513 (EP,US); H01L21/02521 (EP,US);
H01L21/02532 (EP,US) (-)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2018/27]
Former [2009/48]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MT,  NL,  NO,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
TitleGerman:HALBLEITERSUBSTRAT ZUR HERSTELLUNG ELEKTRONISCHER UND/ODER OPTOELEKTRONISCHER BAUELEMENTE UND ENTSPRECHENDES HERSTELLUNGSVERFAHREN[2009/48]
English:SEMICONDUCTOR SUBSTRATE SUITABLE FOR THE REALISATION OF ELECTRONIC AND/ OR OPTOELECTRONIC DEVICES AND RELATED MANUFACTURING PROCESS[2018/01]
French:SUBSTRAT EN SEMI-CONDUCTEUR SE PRÊTANT À LA RÉALISATION DE DISPOSITIFS ÉLECTRONIQUES ET/OU OPTOÉLECTRONIQUES ET PROCÉDÉ DE FABRICATION CORRESPONDANT[2009/48]
Former [2009/48]SEMICONDUCTOR SUBSTRATE SUITABLE FOR THE REALISATION OF ELECTRONIC AND/ OR OPTOELECTRONIC DEVICES AND RELATIVE MANUFACTURING PROCESS
Entry into regional phase13.08.2009National basic fee paid 
13.08.2009Designation fee(s) paid 
13.08.2009Examination fee paid 
Examination procedure13.08.2009Amendment by applicant (claims and/or description)
13.08.2009Examination requested  [2009/48]
04.07.2011Despatch of a communication from the examining division (Time limit: M06)
10.01.2012Reply to a communication from the examining division
06.12.2013Despatch of a communication from the examining division (Time limit: M04)
11.04.2014Reply to a communication from the examining division
09.11.2015Despatch of a communication from the examining division (Time limit: M06)
19.05.2016Reply to a communication from the examining division
22.12.2017Communication of intention to grant the patent
26.04.2018Disapproval of the communication of intention to grant the patent by the applicant or resumption of examination proceedings by the EPO
26.04.2018Fee for grant paid
26.04.2018Fee for publishing/printing paid
25.05.2018Information about intention to grant a patent
25.05.2018Receipt of the translation of the claim(s)
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  04.07.2011
Opposition(s)05.04.2019No opposition filed within time limit [2019/24]
Fees paidRenewal fee
20.11.2009Renewal fee patent year 03
31.01.2011Renewal fee patent year 04
31.01.2012Renewal fee patent year 05
22.01.2013Renewal fee patent year 06
17.12.2013Renewal fee patent year 07
19.12.2014Renewal fee patent year 08
30.05.2016Renewal fee patent year 09
25.01.2017Renewal fee patent year 10
31.01.2018Renewal fee patent year 11
Penalty fee
Additional fee for renewal fee
31.01.201609   M06   Fee paid on   30.05.2016
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU17.01.2008
AT04.07.2018
CY04.07.2018
CZ04.07.2018
DK04.07.2018
EE04.07.2018
ES04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
LV04.07.2018
MC04.07.2018
NL04.07.2018
PL04.07.2018
RO04.07.2018
SE04.07.2018
SI04.07.2018
SK04.07.2018
TR04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
PT05.11.2018
IE17.01.2019
LU17.01.2019
MT17.01.2019
BE31.01.2019
CH31.01.2019
LI31.01.2019
[2021/32]
Former [2021/26]AT04.07.2018
CY04.07.2018
CZ04.07.2018
DK04.07.2018
EE04.07.2018
ES04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
LV04.07.2018
MC04.07.2018
NL04.07.2018
PL04.07.2018
RO04.07.2018
SE04.07.2018
SI04.07.2018
SK04.07.2018
TR04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
PT05.11.2018
IE17.01.2019
LU17.01.2019
MT17.01.2019
BE31.01.2019
CH31.01.2019
LI31.01.2019
Former [2020/29]AT04.07.2018
CZ04.07.2018
DK04.07.2018
EE04.07.2018
ES04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
LV04.07.2018
MC04.07.2018
NL04.07.2018
PL04.07.2018
RO04.07.2018
SE04.07.2018
SI04.07.2018
SK04.07.2018
TR04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
PT05.11.2018
IE17.01.2019
LU17.01.2019
MT17.01.2019
BE31.01.2019
CH31.01.2019
LI31.01.2019
Former [2020/16]AT04.07.2018
CZ04.07.2018
DK04.07.2018
EE04.07.2018
ES04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
LV04.07.2018
MC04.07.2018
NL04.07.2018
PL04.07.2018
RO04.07.2018
SE04.07.2018
SI04.07.2018
SK04.07.2018
TR04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
IE17.01.2019
LU17.01.2019
BE31.01.2019
CH31.01.2019
LI31.01.2019
Former [2020/09]AT04.07.2018
CZ04.07.2018
DK04.07.2018
EE04.07.2018
ES04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
LV04.07.2018
MC04.07.2018
NL04.07.2018
PL04.07.2018
RO04.07.2018
SE04.07.2018
SI04.07.2018
SK04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
IE17.01.2019
LU17.01.2019
BE31.01.2019
CH31.01.2019
LI31.01.2019
Former [2020/04]AT04.07.2018
CZ04.07.2018
DK04.07.2018
EE04.07.2018
ES04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
LV04.07.2018
MC04.07.2018
NL04.07.2018
PL04.07.2018
RO04.07.2018
SE04.07.2018
SI04.07.2018
SK04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
LU17.01.2019
BE31.01.2019
CH31.01.2019
LI31.01.2019
Former [2019/51]AT04.07.2018
CZ04.07.2018
DK04.07.2018
EE04.07.2018
ES04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
LV04.07.2018
MC04.07.2018
NL04.07.2018
PL04.07.2018
RO04.07.2018
SE04.07.2018
SI04.07.2018
SK04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
LU17.01.2019
BE31.01.2019
Former [2019/44]AT04.07.2018
CZ04.07.2018
DK04.07.2018
EE04.07.2018
ES04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
LV04.07.2018
MC04.07.2018
NL04.07.2018
PL04.07.2018
RO04.07.2018
SE04.07.2018
SI04.07.2018
SK04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
LU17.01.2019
Former [2019/40]AT04.07.2018
CZ04.07.2018
DK04.07.2018
EE04.07.2018
ES04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
LV04.07.2018
MC04.07.2018
NL04.07.2018
PL04.07.2018
RO04.07.2018
SE04.07.2018
SI04.07.2018
SK04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
Former [2019/37]AT04.07.2018
CZ04.07.2018
DK04.07.2018
EE04.07.2018
ES04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
LV04.07.2018
NL04.07.2018
PL04.07.2018
RO04.07.2018
SE04.07.2018
SI04.07.2018
SK04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
Former [2019/26]AT04.07.2018
CZ04.07.2018
DK04.07.2018
EE04.07.2018
ES04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
LV04.07.2018
NL04.07.2018
PL04.07.2018
RO04.07.2018
SE04.07.2018
SK04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
Former [2019/24]AT04.07.2018
CZ04.07.2018
EE04.07.2018
ES04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
LV04.07.2018
NL04.07.2018
PL04.07.2018
RO04.07.2018
SE04.07.2018
SK04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
Former [2019/22]AT04.07.2018
CZ04.07.2018
ES04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
LV04.07.2018
NL04.07.2018
PL04.07.2018
RO04.07.2018
SE04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
Former [2019/12]AT04.07.2018
CZ04.07.2018
ES04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
LV04.07.2018
NL04.07.2018
PL04.07.2018
SE04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
Former [2019/11]AT04.07.2018
CZ04.07.2018
FI04.07.2018
HR04.07.2018
LT04.07.2018
NL04.07.2018
PL04.07.2018
SE04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
Former [2019/10]AT04.07.2018
CZ04.07.2018
FI04.07.2018
LT04.07.2018
NL04.07.2018
PL04.07.2018
SE04.07.2018
BG04.10.2018
NO04.10.2018
GR05.10.2018
IS04.11.2018
Former [2019/08]FI04.07.2018
LT04.07.2018
NL04.07.2018
NO04.10.2018
IS04.11.2018
Former [2019/07]LT04.07.2018
NL04.07.2018
Former [2019/04]NL04.07.2018
Cited inInternational search[X]US2005161702  (LINTHICUM KEVIN J [US], et al) [X] 1-10,17-34,41-56 * paragraphs [0017] , [0020] , [0030]; figure - *;
 [X]US2005121693  (UDAGAWA TAKASHI [JP], et al) [X] 1-10,17-34,41-56 * paragraphs [0029] , [0031] , [0048]; figures 1,2,5; claim 1 *;
 [X]US2004232440  (OHTSUKA KOJI [JP], et al) [X] 1-10,17-34,41-56 * paragraphs [0030] - [0037]; figure - *
ExaminationEP0969519
    - DALLA TORRE J ET AL, "Beyond the solid on solid model: An atomic dislocation formation mechanism", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS, US, (19981115), vol. 84, no. 10, doi:10.1063/1.368312, ISSN 0021-8979, pages 5487 - 5494, XP012045252

DOI:   http://dx.doi.org/10.1063/1.368312
    - ROMANOV S I ET AL, "GeSi films with reduced dislocation density grown by molecular-beam epitaxy on compliant substrates based on porous silicon", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, 2 HUNTINGTON QUADRANGLE, MELVILLE, NY 11747, (19991227), vol. 75, no. 26, doi:10.1063/1.125555, ISSN 0003-6951, pages 4118 - 4120, XP012024346

DOI:   http://dx.doi.org/10.1063/1.125555
by applicantUS2111988
 US2005287770
 US7101774
    - "Characterization and fabrication of ZnSe epilayer on porous silicon substrate", THIN SOLID FILMS, (2000), vol. 379, pages 287 - 291
    - S. SARAVANAN ET AL., "Growth and characterization of GaAs epitaxial layer on Si/porous Si/Si substrate by chemical beam epitaxy", J. APPL. PHYS., (2001), vol. 89, pages 5215 - 5219
    - YASUHIKO HAYASHI ET AL., "Thermal Stress Relaxation in GaAs layer on New thin Si layer over Porous Si Substrate Grown by metalorganic chemical vapor deposition", JPN. J. APPL. PHYS., (1998), vol. 37, pages L 1354 - L1357
    - S.I. ROMANOV ET AL., "GeSi Films With Reduced Dislocation Density Grown by Molecular-Beam Epitaxy on Compliant Substrate Based on Porous Silicon", APPLIED PHYSICS LETTERS
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.