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Extract from the Register of European Patents

EP About this file: EP2043157

EP2043157 - SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  20.05.2016
Database last updated on 02.07.2024
Most recent event   Tooltip20.05.2016Application deemed to be withdrawnpublished on 22.06.2016  [2016/25]
Applicant(s)For all designated states
Sumitomo Electric Industries, Ltd.
5-33 Kitahama 4-chome Chuo-ku Osaka-shi
Osaka 541-0041 / JP
[2009/14]
Inventor(s)01 / MIYAZAKI, Tomihito
c/o Osaka Works of Sumitomo Electric Industries Ltd. 1-3 Shimaya 1-chome Konohana-ku
Osaka-shi Osaka 554-0024 / JP
02 / KIYAMA, Makoto
c/o Osaka Works of Sumitomo Electric Industries Ltd. 1-3 Shimaya 1-chome Konohana-ku
Osaka-shi Osaka 554-0024 / JP
 [2009/14]
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstrasse 4
80802 München / DE
[N/P]
Former [2009/14]Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
Leopoldstrasse 4
80802 München / DE
Application number, filing date08722464.819.03.2008
[2009/14]
WO2008JP55089
Priority number, dateJP2007007827526.03.2007         Original published format: JP 2007078275
[2009/14]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2008117718
Date:02.10.2008
Language:JA
[2008/40]
Type: A1 Application with search report 
No.:EP2043157
Date:01.04.2009
Language:EN
[2009/14]
Search report(s)International search report - published on:JP02.10.2008
(Supplementary) European search report - dispatched on:EP17.10.2011
ClassificationIPC:H01L29/872, H01L21/329
[2011/46]
CPC:
H01L29/872 (EP,KR,US); H01L29/47 (KR); H01L29/66143 (EP,US);
H01L29/66204 (EP,US); H01L29/2003 (EP,US)
Former IPC [2009/14]H01L29/47, H01L29/872
Designated contracting statesDE,   FR,   GB,   NL [2010/18]
Former [2009/14]AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MT,  NL,  NO,  PL,  PT,  RO,  SE,  SI,  SK,  TR 
Extension statesALNot yet paid
BANot yet paid
MKNot yet paid
RSNot yet paid
TitleGerman:SCHOTTKY-BARRIERENDIODE UND HERSTELLUNGSVERFAHREN DAFÜR[2009/14]
English:SCHOTTKY BARRIER DIODE AND METHOD FOR MANUFACTURING THE SAME[2009/14]
French:DIODE À BARRIÈRE SCHOTTKY ET PROCÉDÉ DE FABRICATION DE CELLE-CI[2009/14]
Entry into regional phase26.11.2008Translation filed 
26.11.2008National basic fee paid 
26.11.2008Search fee paid 
26.11.2008Designation fee(s) paid 
26.11.2008Examination fee paid 
Examination procedure26.11.2008Examination requested  [2009/14]
27.10.2009Loss of particular rights, legal effect: designated state(s)
02.12.2009Despatch of communication of loss of particular rights: designated state(s) AT, BE, BG, CH, CY, CZ, DK, EE, ES, FI, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MT, NO, PL, PT, RO, SE, SI, SK, TR
28.02.2012Amendment by applicant (claims and/or description)
11.04.2013Despatch of a communication from the examining division (Time limit: M04)
18.07.2013Reply to a communication from the examining division
20.08.2014Despatch of a communication from the examining division (Time limit: M04)
19.11.2014Reply to a communication from the examining division
02.09.2015Despatch of a communication from the examining division (Time limit: M04)
13.01.2016Application deemed to be withdrawn, date of legal effect  [2016/25]
05.02.2016Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2016/25]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  11.04.2013
Fees paidRenewal fee
24.03.2010Renewal fee patent year 03
30.03.2011Renewal fee patent year 04
28.03.2012Renewal fee patent year 05
26.03.2013Renewal fee patent year 06
27.03.2014Renewal fee patent year 07
10.03.2015Renewal fee patent year 08
Penalty fee
Additional fee for renewal fee
31.03.201609   M06   Not yet paid
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Documents cited:Search[X]JPS5712565  (NIPPON ELECTRIC CO) [X] 1-3 * abstract *;
 [X]US6362495  (SCHOEN KIPP J [US], et al) [X] 4,6 * page 4, line 49 - page 5, line 19; figures 5A-5E *;
 [AD]WO03094240  (ADVANCED TECH MATERIALS [US], et al) [AD] 1-8* the whole document *;
 [X]EP1564801  (EMCORE CORP [US]) [X] 1,2 * abstract *;
 [X]US2007023781  (MIZUKAMI MAKOTO [JP], et al) [X] 7,8 * paragraph [0060] - paragraph [0065]; figures 2A-4C *;
 [X]  - LEE CHING-TING ET AL, "Schottky barrier height and surface state density of Ni/Au contacts to (NH4)2Sx-treated n-type GaN", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, (20011015), vol. 79, no. 16, doi:10.1063/1.1410358, ISSN 0003-6951, pages 2573 - 2575, XP012029152 [X] 1-4,6 * the whole document *

DOI:   http://dx.doi.org/10.1063/1.1410358
 [A]  - MOHAMMAD S N ET AL, "Near-ideal platinum-GaN Schottky diodes", ELECTRONICS LETTERS, IEE STEVENAGE, GB, (19960314), vol. 32, no. 6, doi:10.1049/EL:19960354, ISSN 0013-5194, pages 598 - 599, XP006004867 [A] 1-8 * the whole document *

DOI:   http://dx.doi.org/10.1049/el:19960354
International search[X]JPS4827504B  ;
 [X]JPS4822390B  ;
 [X]JPS4517247B  ;
 [X]JPS4813273B
ExaminationEP1633003
by applicantJP2005530334
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.