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EP2111632
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EP About this file: EP2111632
| EP2111632 - CLEAVED FACET (GA,AL,IN)N EDGE-EMITTING LASER DIODES GROWN ON SEMIPOLAR {11-2N} BULK GALLIUM NITRIDE SUBSTRATES [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 27.01.2012 Database last updated on 20.07.2024 | Most recent event Tooltip | 27.01.2012 | Application deemed to be withdrawn | published on 29.02.2012 [2012/09] | Applicant(s) | For all designated states The Regents of the University of California 1111 Franklin Street, 12th Floor Oakland, CA 94607 / US | [N/P] |
| Former [2009/44] | For all designated states The Regents of the University of California 1111 Franklin Street, 12th Floor Oakland, CA 94607 / US | Inventor(s) | 01 /
NAKAMURA, Shuji P.O.Box 61656 Santa Barbara, CA 93160 / US | 02 /
SPECK, James, S. 947 West Campus Lane Goleta, CA 93117 / US | 03 /
DENBAARS, Steven, P. 283 Elderberry Drive Goleta, CA 93117 / US | 04 /
TYAGI, Anurag 7278 Yolo Lane Goleta, CA 93117 / US | [2009/44] | Representative(s) | Jackson, Martin Peter J A Kemp 14 South Square Gray's Inn London WC1R 5JJ / GB | [N/P] |
| Former [2009/44] | Jackson, Martin Peter J.A. Kemp & Co. 14 South Square Gray's Inn London WC1R 5JJ / GB | Application number, filing date | 08725469.4 | 12.02.2008 | [2009/44] | WO2008US01843 | Priority number, date | US20070889518P | 12.02.2007 Original published format: US 889518 P | [2009/44] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2008100504 | Date: | 21.08.2008 | Language: | EN | [2008/34] | Type: | A1 Application with search report | No.: | EP2111632 | Date: | 28.10.2009 | Language: | EN | The application published by WIPO in one of the EPO official languages on 21.08.2008 takes the place of the publication of the European patent application. | [2009/44] | Search report(s) | International search report - published on: | US | 21.08.2008 | Classification | IPC: | H01L21/02 | [2009/44] | CPC: |
H01S5/34333 (EP,US);
B82Y20/00 (EP,US);
H01S5/22 (EP,US);
H01S5/0202 (EP,US);
H01S5/2201 (EP,US);
H01S5/3216 (EP,US)
| Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR [2009/44] | Title | German: | ABGESPALTENE FACETTE (GA,AL,IN)N KANTENEMITTIERENDEN DIODEN, DIE AUF SEMIPOLAREN{11-2N} GALLIUMNITRIDSUBSTRATEN | [2009/44] | English: | CLEAVED FACET (GA,AL,IN)N EDGE-EMITTING LASER DIODES GROWN ON SEMIPOLAR {11-2N} BULK GALLIUM NITRIDE SUBSTRATES | [2009/44] | French: | DIODES LASER ÉMETTRICES DE BORD N À FACETTE CLIVÉE (GA,AL,IN) QUE L'ON FAIT CROÎTRE SUR DES SUBSTRATS SEMIPOLAIRES (11-2N) AU NITRURE DE GALLIUM EN VRAC | [2009/44] | Entry into regional phase | 22.07.2009 | National basic fee paid | 22.07.2009 | Search fee paid | 22.07.2009 | Designation fee(s) paid | 22.07.2009 | Examination fee paid | Examination procedure | 22.07.2009 | Examination requested [2009/44] | 01.09.2011 | Application deemed to be withdrawn, date of legal effect [2012/09] | 13.10.2011 | Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2012/09] | Fees paid | Renewal fee | 24.02.2010 | Renewal fee patent year 03 | Penalty fee | Additional fee for renewal fee | 28.02.2011 | 04 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [Y]US2005205884 (KIM JARNES C [US], et al); | [Y]US2007015345 (BAKER TROY J [US], et al) |