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EP2136390
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EP About this file: EP2136390
| EP2136390 - Production of semiconductor material and devices using oblique angle etched templates [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 17.08.2018 Database last updated on 21.05.2024 | |
| Former | Examination is in progress Status updated on 19.12.2017 | Most recent event Tooltip | 17.08.2018 | Application deemed to be withdrawn | published on 19.09.2018 [2018/38] | Applicant(s) | For all designated states Nanogan Limited 5-6 Northumberland Buildings Queen Square Bath BA1 2JE / GB | [2009/52] | Inventor(s) | 01 /
Wang, Wang Nang Martlets Midford Lane Limpley Stoke Bath, Somerset BA2 7GW / GB | [2009/52] | Representative(s) | Stratagem IPM Limited Meridian Court Comberton Road Toft, Cambridge CB23 2RY / GB | [N/P] |
| Former [2009/52] | Emerson, Peter James, et al Page Hargrave Whitefriars Lewins Mead Bristol BS1 2NT / GB | Application number, filing date | 09163286.9 | 19.06.2009 | [2009/52] | Priority number, date | GB20080011246 | 19.06.2008 Original published format: GB 0811246 | [2009/52] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP2136390 | Date: | 23.12.2009 | Language: | EN | [2009/52] | Type: | A3 Search report | No.: | EP2136390 | Date: | 29.12.2010 | [2010/52] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 25.11.2010 | Classification | IPC: | H01L21/20, H01L21/36, H01L21/02 | [2010/52] | CPC: |
H01L21/02505 (EP,GB);
H01L21/0237 (EP,GB);
H01L21/02433 (EP,GB);
H01L21/02458 (EP,GB);
H01L21/02513 (EP,GB);
H01L21/0254 (EP,GB);
|
| Former IPC [2009/52] | H01L21/20, H01L21/36 | Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR [2009/52] | Extension states | AL | Not yet paid | BA | Not yet paid | RS | Not yet paid | Title | German: | Herstellung von Halbleitermaterial und Vorrichtungen unter Verwendung von in einem schiefen Winkel geätzten Schablonen | [2009/52] | English: | Production of semiconductor material and devices using oblique angle etched templates | [2009/52] | French: | Production de matériau semi-conducteur et dispositifs utilisant des modèles gravés à angle oblique | [2009/52] | Examination procedure | 24.06.2011 | Amendment by applicant (claims and/or description) | 24.06.2011 | Examination requested [2011/31] | 03.12.2012 | Despatch of a communication from the examining division (Time limit: M04) | 05.04.2013 | Reply to a communication from the examining division | 25.11.2015 | Despatch of a communication from the examining division (Time limit: M06) | 25.05.2016 | Reply to a communication from the examining division | 08.12.2017 | Despatch of a communication from the examining division (Time limit: M04) | 19.04.2018 | Application deemed to be withdrawn, date of legal effect [2018/38] | 17.05.2018 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time [2018/38] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 03.12.2012 | Fees paid | Renewal fee | 24.06.2011 | Renewal fee patent year 03 | 22.06.2012 | Renewal fee patent year 04 | 25.06.2013 | Renewal fee patent year 05 | 27.06.2014 | Renewal fee patent year 06 | 19.06.2015 | Renewal fee patent year 07 | 29.06.2016 | Renewal fee patent year 08 | 27.06.2017 | Renewal fee patent year 09 | Penalty fee | Additional fee for renewal fee | 30.06.2018 | 10 M06 Not yet paid |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XDI]US2002111044 (LINTHICUM KEVIN J [US], et al) [XD] 1-7,10-15 * paragraphs [0021] , [0022]; figure - * [I] 8,9; | [XI]GB2436398 (UNIV BATH [GB]) [X] 1,3-6,8,10-15 * claim - * [I] 2,7,9; | [XP]WO2008096168 (NANOGAN LTD [GB], et al) [XP] 1-15 * figure 3; claim - * | by applicant | US6413627 | US5980632 | US6673149 | US6616757 | US4574093 | US6657232 | US2004157358 | US2005199886 | US2006270201 | US6835246 | US2003006211 | US6596377 | JP2005136106 | US2002111044 | US2004123796 | US2004251519 | WO0244444 | US2001055881 | US6844569 | EP1246233 | EP1422748 | - Handbook of Crystal Growth, ELSEVIER SCIENCE, (1994), vol. 3 | - R.F. DAVIS ET AL., "Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AIGaN Alloys on 6H-SiC(0001) and Si(111) Substrates.", MRS INTERNET J. NITRIDE SEMICOND. RES., (2001), vol. 6, no. 14, page 1 | - M. YOSHIAWA ET AL., "Growth of self- organised GaN nanostructures on A1203 (0001) by RF-radical source molecular beam epitaxy", JPN. J. APPL. PHYS., (1997), vol. 36, page L359 | - K. KUSAKABE; A. KIKUCHI; K. KISHINO, "Overgrowth of GaN layer on GaN nano-columns by RF-molecular beam epitaxy", J. CRYSTL. GROWTH., (2002), vol. 237-239, doi:doi:10.1016/S0022-0248(01)02113-3, page 988, XP004355924 DOI: http://dx.doi.org/10.1016/S0022-0248(01)02113-3 | - J. SU ET AL., "Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition", APPL. PHYS.LETT., (2005), vol. 86, page 13105 | - G. KIPSHIDZE ET AL., "Controlled growth of GaN nanowires by pulsed metalorganic chemical vapor deposition", APPL. PHYS.LETT., (2005), vol. 86, doi:doi:10.1063/1.1850188, page 33104, XP012066127 DOI: http://dx.doi.org/10.1063/1.1850188 | - H.M. KIM ET AL., "Growth and characterization of single-crystal GaN nanorods by hydride vapor phase epitaxy", APPL. PHYS. LETT., (2002), vol. 81, doi:doi:10.1063/1.1507617, page 2193, XP012031949 DOI: http://dx.doi.org/10.1063/1.1507617 | - C.C. MITCHELL ET AL., "Mass transport in the epitaxial lateral overgrowth of gallium nitride", J. CRYST. GROWTH, (2001), vol. 222, doi:doi:10.1016/S0022-0248(00)00874-5, page 144, XP004228301 DOI: http://dx.doi.org/10.1016/S0022-0248(00)00874-5 | - K. HIRAMATSU., "Epitaxial lateral overgrowth techniques used in group III nitride epitaxy", J. PHYS: CONDENS, MATTER., (2001), vol. 13, doi:doi:10.1088/0953-8984/13/32/306, page 6961, XP009141205 DOI: http://dx.doi.org/10.1088/0953-8984/13/32/306 |