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Extract from the Register of European Patents

EP About this file: EP2352182

EP2352182 - METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING EPITAXIAL WAFER [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  13.03.2015
Database last updated on 28.03.2026
Most recent event   Tooltip13.03.2015Withdrawal of applicationpublished on 15.04.2015  [2015/16]
Applicant(s)For all designated states
Sumitomo Electric Industries, Ltd.
5-33 Kitahama 4-chome
Chuo-ku
Osaka-shi
Osaka 541-0041 / JP
[N/P]
Former [2011/31]For all designated states
Sumitomo Electric Industries, Ltd.
5-33 Kitahama 4-chome Chuo-ku Osaka-shi
Osaka 541-0041 / JP
Inventor(s)01 / SUMITOMO Takamichi
c/o Itami Works of Sumitomo Electric Industries Ltd. 1-1 Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
02 / AKITA Katsushi
c/o Itami Works of Sumitomo Electric Industries Ltd. 1-1 Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
03 / KYONO Takashi
c/o Itami Works of Sumitomo Electric Industries Ltd. 1-1 Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
04 / YOSHIZUMI Yusuke
c/o Itami Works of Sumitomo Electric Industries Ltd. 1-1 Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
 [2011/31]
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstraße 4
80802 München / DE
[N/P]
Former [2011/31]Grünecker, Kinkeldey, Stockmair & Schwanhäusser Anwaltssozietät
Leopoldstrasse 4
80802 München / DE
Application number, filing date09821994.219.10.2009
[2011/31]
WO2009JP67988
Priority number, dateJP2008027006520.10.2008         Original published format: JP 2008270065
JP2009022535529.09.2009         Original published format: JP 2009225355
[2011/31]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2010047297
Date:29.04.2010
Language:JA
[2010/17]
Type: A1 Application with search report 
No.:EP2352182
Date:03.08.2011
Language:EN
[2011/31]
Search report(s)International search report - published on:JP29.04.2010
(Supplementary) European search report - dispatched on:EP14.01.2015
ClassificationIPC:H01L21/205, H01L33/06, H01L33/32, H01L33/16
[2015/07]
CPC:
H10P14/3416 (EP,US); H10H20/817 (EP,KR,US); B82Y20/00 (EP,US);
H10H20/013 (EP,US); H10H20/812 (EP,KR,US); H10H20/825 (EP,US);
H10P14/24 (EP,US); H10P14/2908 (EP,US); H10P14/2926 (EP,US);
H10P14/3216 (EP,US); H10P14/3444 (EP,US); H01S5/34333 (EP,US);
H10H20/01335 (EP,US) (-)
Former IPC [2011/31]H01L33/32, H01L21/205, H01S5/343
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   SM,   TR [2011/31]
TitleGerman:VERFAHREN ZUR HERSTELLUNG EINES LICHTEMITTIERENDEN NITRIDHALBLEITERELEMENTS UND VERFAHREN ZUR HERSTELLUNG EINES EPITAKTISCHEN WAFERS[2011/31]
English:METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING EPITAXIAL WAFER[2011/31]
French:PROCEDE DE FABRICATION D' UN ELEMENT EMETTEUR DE LUMIERE SEMI-CONDUCTEUR AU NITRURE ET PROCEDE DE FABRICATION D' UNE PLAQUETTE EPITAXIQUE[2011/31]
Entry into regional phase19.05.2011Translation filed 
19.05.2011National basic fee paid 
19.05.2011Search fee paid 
19.05.2011Designation fee(s) paid 
19.05.2011Examination fee paid 
Examination procedure19.05.2011Amendment by applicant (claims and/or description)
19.05.2011Examination requested  [2011/31]
05.03.2015Application withdrawn by applicant  [2015/16]
Fees paidRenewal fee
28.10.2011Renewal fee patent year 03
30.10.2012Renewal fee patent year 04
28.10.2013Renewal fee patent year 05
28.10.2014Renewal fee patent year 06
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Documents cited:Search[XI] JP2008218645  (ROHM CO LTD et al.) [X] 1-5,7-19,21 * paragraph [0020] - paragraph [0027]; figure 3 * * paragraph [0028] - paragraph [0033]; figure 4 * * paragraph [0034] - paragraph [0042] * * paragraph [0046] *[I] 6,20
 [A] EP1814164  (SUMITOMO ELECTRIC INDUSTRIES et al.) [A] 20 * paragraph [0036] *
 [I] JP2008109066  (ROHM CO LTD et al.) [I] 1-21 * paragraph [0021] - paragraph [0041]; figures 1-3 * * paragraph [0051] - paragraph [0087]; figures 11-13 *
 [A] US2008128729  (OKAMOTO KUNIYOSHI et al.) [A] 1-19,21 * paragraph [0031] - paragraph [0042] * * paragraph [0017] - paragraph [0030]; figure 1 *
 [A] US6162656  (KUNISATO TATSUYA et al.) [A] 1,4,6,7,11,14,21 * column 1, line 45 - line 48 *
 [A]   WU J ET AL: "Small band gap bowing in In1-xGaxN alloys", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, vol. 80, no. 25, 24 June 2002 (2002-06-24), pages 4741 - 4743, XP012031257, ISSN: 0003-6951, DOI: 10.1063/1.1489481 [A] 1,3,8,12,21 * equation (1);; figure 2 *

DOI:   http://dx.doi.org/10.1063/1.1489481
 [A]   HITOSHI SATO ET AL: "High power and high efficiency green light emitting diode on free-standing semipolar (1122) bulk GaN substrate", PHYSICA STATUS SOLIDI. RAPID RESEARCH LETTERS, WILEY - V C H VERLAG, DE, vol. 1, no. 4, 15 July 2007 (2007-07-15), pages 162 - 164, XP002636795, ISSN: 1862-6254, [retrieved on 20070615], DOI: 10.1002/PSSR.200701098 [A] 1,3,8,12,21 * page 164, column 1, line 6 - line 10 *

DOI:   http://dx.doi.org/10.1002/pssr.200701098
 [A]   TYAGI A ET AL: "Stimulated Emission at Blue-green (480nm) and Green (514nm) Wavelentghs from Nonpolar (m-plane) and Semipolar (1122) InGaN Multiple Quantum Well Laser Diode Structures", APPLIED PHYSICS EXPRESS, JAPAN SOCIETY OF APPLIED PHYSICS; JP, JP, vol. 1, no. 9, 5 September 2008 (2008-09-05), pages 91103 - 1, XP001516610, ISSN: 1882-0778, DOI: 10.1143/APEX.1.091103 [A] 1,21 * pages 091103-2, column 2, line 40 - line 41 *

DOI:   http://dx.doi.org/10.1143/APEX.1.091103
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