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Extract from the Register of European Patents

EP About this file: EP2357661

EP2357661 - EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF [Right-click to bookmark this link]
StatusThe application has been refused
Status updated on  06.03.2015
Database last updated on 12.07.2024
Most recent event   Tooltip06.03.2015Refusal of applicationpublished on 08.04.2015  [2015/15]
Applicant(s)For all designated states
DOWA Electronics Materials Co., Ltd.
4-14-1, Soto-Kanda Chiyoda-ku
Tokyo 101-0021 / JP
[2011/33]
Inventor(s)01 / IKUTA, Tetsuya
c/o DOWA Electronics Materials Co. Ltd. 4-14-1 Sotokanda Chiyoda-ku
Tokyo 101-0021 / JP
02 / SHIMIZU, Jo
c/o DOWA Electronics Materials Co. Ltd. 4-14-1 Sotokanda Chiyoda-ku
Tokyo 101-0021 / JP
03 / SHIBATA, Tomohiko
c/o DOWA Electronics Materials Co. Ltd. 4-14-1 Sotokanda Chiyoda-ku
Tokyo 101-0021 / JP
 [2011/33]
Representative(s)Müller-Boré & Partner Patentanwälte PartG mbB
Friedenheimer Brücke 21
80639 München / DE
[N/P]
Former [2014/11]Müller-Boré & Partner Patentanwälte PartG mbB
Friedenheimer Brücke 21
80639 München / DE
Former [2011/33]Perrey, Ralf
Müller-Boré & Partner Grafinger Strasse 2
D-81671 München / DE
Application number, filing date09829111.518.11.2009
[2011/33]
WO2009JP69896
Priority number, dateJP2008030262027.11.2008         Original published format: JP 2008302620
JP2009026001413.11.2009         Original published format: JP 2009260014
[2011/33]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2010061865
Date:03.06.2010
Language:JA
[2010/22]
Type: A1 Application with search report 
No.:EP2357661
Date:17.08.2011
Language:EN
[2011/33]
Search report(s)International search report - published on:JP03.06.2010
(Supplementary) European search report - dispatched on:EP19.09.2012
ClassificationIPC:H01L21/20, H01L21/205, H01L21/338, H01L29/778, H01L29/812, H01L29/737, H01L21/02, H01L29/66
[2012/42]
CPC:
H01L21/0254 (EP,KR,US); H01L21/02381 (EP,KR,US); H01L21/02458 (EP,US);
H01L21/02505 (EP,US); H01L21/02507 (EP,KR,US); H01L29/66462 (EP,KR,US);
H01L29/7378 (EP,US); H01L29/2003 (EP,US) (-)
Former IPC [2011/33]H01L21/20, H01L21/205, H01L21/338, H01L29/778, H01L29/812
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   SM,   TR [2011/33]
TitleGerman:EPITAKTISCHES SUBSTRAT FÜR EINE ELEKTRONISCHE VORRICHTUNG UND HERSTELLUNGSVERFAHREN DAFÜR[2011/33]
English:EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF[2011/33]
French:SUBSTRAT ÉPITAXIAL POUR DISPOSITIF ÉLECTRONIQUE ET SON PROCÉDÉ DE FABRICATION[2011/33]
Entry into regional phase27.05.2011Translation filed 
01.06.2011National basic fee paid 
01.06.2011Search fee paid 
01.06.2011Designation fee(s) paid 
01.06.2011Examination fee paid 
Examination procedure01.06.2011Examination requested  [2011/33]
19.03.2013Amendment by applicant (claims and/or description)
23.04.2013Despatch of a communication from the examining division (Time limit: M04)
20.08.2013Reply to a communication from the examining division
10.10.2013Despatch of a communication from the examining division (Time limit: M02)
10.12.2013Reply to a communication from the examining division
27.06.2014Cancellation of oral proceeding that was planned for 01.07.2014
01.07.2014Date of oral proceedings (cancelled)
19.09.2014Application refused, date of legal effect [2015/15]
19.09.2014Date of oral proceedings
07.11.2014Minutes of oral proceedings despatched
13.11.2014Despatch of communication that the application is refused, reason: substantive examination [2015/15]
Divisional application(s)EP13001425.1  / EP2613341
The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  23.04.2013
Fees paidRenewal fee
29.11.2011Renewal fee patent year 03
28.11.2012Renewal fee patent year 04
28.11.2013Renewal fee patent year 05
Penalty fee
Additional fee for renewal fee
30.11.201406   M06   Not yet paid
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Documents cited:Search[XA]US2005118752  (OTSUKA KOJI [JP], et al) [X] 1,4-9 * paragraph [0026] - paragraph [0053] * * paragraph [0111] - paragraph [0113] * * figures 1, 11 * [A] 2,3;
 [XA]US2007210329  (GOTO HIROKAZU [JP]) [X] 1,4-9 * paragraph [0025] - paragraph [0059] * * figures 1, 3 * [A] 2,3;
 [A]US2008203382  (YANAGIHARA MASATAKA [JP]) [A] 1-9 * paragraph [0034] - paragraph [0122] * * figures 4, 6 *;
 [A]  - TOMOYA SUGAHARA ET AL, "Role of AlN/GaN Multilayer in Crack-Free GaN Layer Growth on 5"[phi] Si (111) Substrate", JAPANESE JOURNAL OF APPLIED PHYSICS, (20041201), vol. 43, No. 12B, doi:10.1143/JJAP.43.L1595, ISSN 0021-4922, pages 1595 - 1597, XP055037579 [A] 1-9 * the whole document *

DOI:   http://dx.doi.org/10.1143/JJAP.43.L1595
International search[A]JP2005159207  (SANKEN ELECTRIC CO LTD);
 [A]JP2005158846  (SANKEN ELECTRIC CO LTD);
 [A]JP2007273814  (FURUKAWA ELECTRIC CO LTD);
 [A]JP2008251704  (FURUKAWA ELECTRIC CO LTD)
Examination   - SEMI MF1451-92, 3081 ZANKER ROAD, SAN JOSE, CA 95134, USA, (2003), pages 1 - 15, XP040450901
    - SEMI MF534-0707, 3081 ZANKER ROAD, SAN JOSE, CA 95134, USA, (2007), pages 1 - 5, XP040459992
    - NATSU W ET AL, "Effects of support method and mechanical property of 300mm silicon wafer on sori measurement", PRECISION ENGINEERING, ELSEVIER, AMSTERDAM, NL, vol. 29, no. 1, ISSN 0141-6359, (20050101), pages 19 - 26, (20050101), XP027766645
    - SEMI M1-0302, 3081 ZANKER ROAD, SAN JOSE, CA 95134, USA, (2002), pages 1 - 27, XP040448387
by applicantJPH06112120
 JP2003059948
 JP2008522447
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.