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Extract from the Register of European Patents

EP About this file: EP2501844

EP2501844 - CRYSTAL GROWTH APPARATUS AND METHOD [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  25.10.2013
Database last updated on 03.08.2024
Most recent event   Tooltip25.10.2013Withdrawal of applicationpublished on 27.11.2013  [2013/48]
Applicant(s)For all designated states
Axt, Inc.
4281 Technology Drive
Fremont, CA 94538 / US
[2012/39]
Inventor(s)01 / LIU, Weiguo
774 Dolores Avenue
San Leandro, CA 94577 / US
02 / ELLIOT, A., Grant
3712 Ortega Court
Palo Alto, CA 94303 / US
 [2012/39]
Representative(s)Smith, Gary John
Page White & Farrer Limited
Bedford House
21A John Street
London WC1N 2BF / GB
[N/P]
Former [2012/39]Smith, Gary John
Page White & Farrer Bedford House John Street
London, WC1N 2BF / GB
Application number, filing date09850317.008.10.2009
WO2009US60072
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2011043777
Date:14.04.2011
Language:EN
[2011/15]
Type: A1 Application with search report 
No.:EP2501844
Date:26.09.2012
Language:EN
The application published by WIPO in one of the EPO official languages on 14.04.2011 takes the place of the publication of the European patent application.
[2012/39]
Search report(s)International search report - published on:US14.04.2011
(Supplementary) European search report - dispatched on:EP04.07.2013
ClassificationIPC:C30B11/00, C30B29/40, C30B29/48
[2013/32]
CPC:
C30B11/007 (EP); C30B11/003 (EP); C30B11/006 (EP);
C30B29/40 (EP); C30B29/48 (EP)
Former IPC [2012/39]C30B11/00
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   SM,   TR [2012/39]
TitleGerman:KRISTALLZÜCHTUNGSVORRICHTUNG UND -VERFAHREN[2012/39]
English:CRYSTAL GROWTH APPARATUS AND METHOD[2012/39]
French:APPAREIL ET PROCÉDÉ DE CROISSANCE DES CRISTAUX[2012/39]
Entry into regional phase20.07.2012National basic fee paid 
20.07.2012Search fee paid 
20.07.2012Designation fee(s) paid 
20.07.2012Examination fee paid 
Examination procedure14.06.2012Despatch of communication that the application is deemed to be withdrawn, reason: filing fee / search fee not paid in time
20.07.2012Examination requested  [2012/39]
06.02.2013Amendment by applicant (claims and/or description)
24.10.2013Application withdrawn by applicant  [2013/48]
Request for further processing for:20.07.2012Request for further processing filed
20.07.2012Full payment received (date of receipt of payment)
Request granted
30.10.2012Decision despatched
The application is deemed to be withdrawn due to non-payment of the search fee
20.07.2012Request for further processing filed
20.07.2012Full payment received (date of receipt of payment)
Request granted
15.08.2012Decision despatched
The application is deemed to be withdrawn due to non-payment of the filing fee
20.07.2012Request for further processing filed
20.07.2012Full payment received (date of receipt of payment)
Request granted
15.08.2012Decision despatched
The application is deemed to be withdrawn due to non-payment of the examination fee
20.07.2012Request for further processing filed
20.07.2012Full payment received (date of receipt of payment)
Request granted
15.08.2012Decision despatched
The application is deemed to be withdrawn due to non-payment of designation fees
TR, SM, SK, SI, SE, RO, PT, PL, NO, NL, MT, MK, MC, LV, LU, LT, IT, IS, IE, HU, HR, GR, GB, FR, FI, ES, EE, DK, DE, CZ, CY, CH, BG, BE, AT
20.07.2012Request for further processing filed
20.07.2012Full payment received (date of receipt of payment)
Request granted
15.08.2012Decision despatched
Fees paidRenewal fee
20.07.2012Renewal fee patent year 03
26.10.2012Renewal fee patent year 04
14.10.2013Renewal fee patent year 05
Penalty fee
Additional fee for renewal fee
08.05.201203   M06   Fee paid on   10.08.2012
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Documents cited:Search[XYI]JP2004277266  (HITACHI CABLE) [X] 1-3,9,10 * abstract * [Y] 11,14 [I] 4-8,12,13,15;
 [A]US6334897  (ASAHI TOSHIAKI [JP] ET AL) [A] 11,14 * column 9, line 48 - column 10, line 2 *
 [Y]  - BUNGER T ET AL, "Development of a vertical gradient freeze process for low EPD GaAs substrates", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, (20010322), vol. 80, no. 1-3, doi:10.1016/S0921-5107(00)00573-0, ISSN 0921-5107, pages 5 - 9, XP004234652 [Y] 11,14 * page 5, column 2, paragraph 2 *

DOI:   http://dx.doi.org/10.1016/S0921-5107(00)00573-0
International search[Y]US5116456  (NESTOR ONTARIO H [US]);
 [Y]US6334897  (ASAHI TOSHIAKI [JP], et al);
 [Y]US6896729  (LIU XIAO GORDON [US], et al);
 [Y]US2008311417  (EICHLER STEFAN [DE], et al);
 [Y]  - BUNGER ET AL., "Development of a vertical gradient freeze process for low EPD GaAs substrates", MATERIALS SCIENCE AND ENGINEERING B JOURNAL, vol. 80, no. 1-3, (20010322), pages 5 - 9, URL: www.sciencedirect.com/science?_ob=Mlmg&_imagekey=B6TXF-42TC6P2-3-H&_cdi=5589&user=108orig=search&coverDate=03%2F22%2F2001&sk=999199998&view=c&wchp=dGLzVtb-zSkzS&md5=89eef2d9bf75f6dbdalcbfe476c41fd7&ie=/sdarticle.pdt, (20091127), XP004234652

DOI:   http://dx.doi.org/10.1016/S0921-5107(00)00573-0
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.