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Extract from the Register of European Patents

EP About this file: EP2378548

EP2378548 - Method of processing and inspecting semiconductor substrates [Right-click to bookmark this link]
Former [2011/42]Methods of processing and inspecting semiconductor substrates
[2015/14]
StatusThe application is deemed to be withdrawn
Status updated on  19.02.2016
Database last updated on 24.04.2024
Most recent event   Tooltip19.02.2016Application deemed to be withdrawnpublished on 23.03.2016  [2016/12]
Applicant(s)For all designated states
Nanda Technologies GmbH
Lise-Meitner-Strasse 3
85716 Unterschleissheim / DE
For all designated states
IMEC
Kapeldreef 75
3001 Leuven / BE
[2011/42]
Inventor(s)01 / Markwort, Lars
Dachauer Strasse 59D
85778 Haimhausen / DE
02 / Guittet, Pierre-Yves
Tizianstrasse 112
80638 München / DE
03 / Halder, Sandip
c/o Imec
Kapeldreef 75
3001 Leuven / BE
04 / Jourdain, Anne
c/o Imec
Kapeldreef 75
3001 Leuven / BE
 [2011/42]
Representative(s)Diehl & Partner
Patent- und Rechtsanwaltskanzlei mbB
Erika-Mann-Straße 9
80636 München / DE
[N/P]
Former [2011/42]Diehl & Partner GbR
Patentanwälte Augustenstrasse 46
80333 München / DE
Application number, filing date10004141.719.04.2010
[2011/42]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP2378548
Date:19.10.2011
Language:EN
[2011/42]
Search report(s)(Supplementary) European search report - dispatched on:EP01.09.2010
ClassificationIPC:G01N21/95, H01L21/768, H01L21/66
[2015/14]
CPC:
H01L22/12 (EP,US); G01N21/9501 (EP,US); H01L21/76898 (EP,US);
H01L22/26 (EP,US); G01N21/9505 (EP,US)
Former IPC [2011/42]H01L21/66
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   SM,   TR [2011/42]
Extension statesALNot yet paid
BANot yet paid
MENot yet paid
RSNot yet paid
TitleGerman:Verfahren zur Prozessierung und Untersuchung von Halbleitersubstraten[2011/42]
English:Method of processing and inspecting semiconductor substrates[2015/14]
French:Procédé de traitement et d'inspection de substrats semi-conducteurs[2015/14]
Former [2011/42]Methods of processing and inspecting semiconductor substrates
Former [2011/42]Procédés de traitement et d'inspection de substrats de semi-conducteur
Examination procedure29.03.2011Examination requested  [2011/42]
06.05.2011Despatch of a communication from the examining division (Time limit: M04)
06.09.2011Reply to a communication from the examining division
31.05.2012Despatch of a communication from the examining division (Time limit: M06)
10.12.2012Reply to a communication from the examining division
11.02.2013Despatch of a communication from the examining division (Time limit: M06)
19.08.2013Reply to a communication from the examining division
09.10.2013Despatch of a communication from the examining division (Time limit: M06)
22.04.2014Reply to a communication from the examining division
18.06.2014Despatch of a communication from the examining division (Time limit: M06)
26.11.2014Reply to a communication from the examining division
18.05.2015Communication of intention to grant the patent
29.09.2015Application deemed to be withdrawn, date of legal effect  [2016/12]
04.11.2015Despatch of communication that the application is deemed to be withdrawn, reason: fee for grant / fee for printing not paid in time  [2016/12]
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  06.05.2011
Fees paidRenewal fee
29.03.2012Renewal fee patent year 03
12.04.2013Renewal fee patent year 04
25.03.2014Renewal fee patent year 05
10.04.2015Renewal fee patent year 06
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Documents cited:Search[A]US4933567  (SILVA ROBERT M [US], et al) [A] 2,3,7-10,13 * column 6, line 17 - line 24 * * column 6, line 36 - line 52 ** column 10, line 17 - column 11, line 2 *;
 [XYI]US2009008794  (WU WENG-JIN [TW], et al) [X] 1,6-13,15 * paragraph [0035] - paragraph [0049]; figures 2-4,8,10 * * paragraph [0053] * [Y] 2-5 [I] 14;
 [XI]US2009227047  (YANG KU-FENG [TW], et al) [X] 1,8,10-12,15 * paragraphs [0032] , [0067] , [0072]; figures 1-4, 8 * [I] 3,6,14;
 [YD]WO2009121628  (NANDA TECHNOLOGIES GMBH [DE], et al) [YD] 2-5 * page 20, line 3 - line 6; figure 3 *
Examination   - ABT I ET AL, "Characterization of silicon microstrip detectors using an infrared laser system", NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A: ACCELERATORS, SPECTROMETERS, DETECTORS, AND ASSOCIATED EQUIPMENT, ELSEVIER BV * NORTH-HOLLAND, NETHERLANDS, (19990301), vol. 423, no. 2-3, doi:10.1016/S0168-9002(98)01337-0, ISSN 0168-9002, pages 303 - 319, XP004160862

DOI:   http://dx.doi.org/10.1016/S0168-9002(98)01337-0
by applicantUS6916725
 US2005158889
 US7214615
 WO2009121628
 US2010032764
 US2010038800
 US2010041226
    - ANNE JOURDAIN ET AL., "New Hybrid Bonding Approach for 3D Stacking of ICs", CHIP SCALE REVIEW, (200908), pages 24 - 28
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.