EP2261993 - Semiconductor device [Right-click to bookmark this link] | |||
Former [2010/50] | Semiconductor device and method for making the same | ||
[2014/33] | Status | No opposition filed within time limit Status updated on 06.11.2015 Database last updated on 29.07.2024 | Most recent event Tooltip | 06.11.2015 | No opposition filed within time limit | published on 09.12.2015 [2015/50] | Applicant(s) | For all designated states Fujitsu Semiconductor Limited 2-10-23 Shin-Yokohama Kohoku-ku, Yokohama-shi Kanagawa 222-0033 / JP | [2010/50] | Inventor(s) | 01 /
Honda, Toshiyuki c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | 02 /
Tsuji, Kazuto c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | 03 /
Onodera, Masanori c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | 04 /
Aoki, Hiroshi c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | 05 /
Kobayashi, Izumi c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | 06 /
Moriya, Susumu c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | 07 /
Kaiya, Hiroshi c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | [2015/01] |
Former [2010/50] | 01 /
Honda, Toshiyuki c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | ||
02 /
Tsuji, Kazuto c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | |||
03 /
Onodera, Masanori c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | |||
04 /
Aoki, Hiroshi c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | |||
05 /
Kobayashi, Izumi c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | |||
06 /
Moriya, Susumu c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | |||
07 /
Kaiya, Hiroshi c/o FUJITSU LIMITED 1-1, Kamikodanaka 4-chome Nakahara-ku Kawasaki-shi Kanagawa 211-8588 / JP | Representative(s) | Stebbing, Timothy Charles Haseltine Lake LLP Lincoln House, 5th Floor 300 High Holborn London WC1V 7JH / GB | [2015/01] |
Former [2010/50] | Stebbing, Timothy Charles Haseltine Lake LLP 5th Floor, Lincoln House 300 High Holborn London, Greater London WC1V 7JH / GB | Application number, filing date | 10181125.5 | 10.12.2001 | [2010/50] | Priority number, date | JP20010055735 | 28.02.2001 Original published format: JP 2001055735 | JP20010315672 | 12.10.2001 Original published format: JP 2001315672 | [2010/50] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP2261993 | Date: | 15.12.2010 | Language: | EN | [2010/50] | Type: | A3 Search report | No.: | EP2261993 | Date: | 11.07.2012 | Language: | EN | [2012/28] | Type: | B1 Patent specification | No.: | EP2261993 | Date: | 31.12.2014 | Language: | EN | [2015/01] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 12.06.2012 | Classification | IPC: | H01L31/02, H05K1/02, H04N5/225, H01L27/146, H01L31/0203, H01L31/0232, H04N7/14 | [2014/33] | CPC: |
H01L31/0203 (EP,US);
H01L27/14 (KR);
H01L27/14618 (EP,US);
H01L27/14625 (EP,US);
H01L27/14683 (EP,US);
H01L31/02002 (EP,US);
H01L31/02325 (EP,US);
H04N23/54 (EP,US);
H04N23/55 (EP,US);
H01L2224/48227 (EP,US);
H01L2924/01322 (EP,US);
H04N2007/145 (EP,US);
| C-Set: |
H01L2224/48091, H01L2924/00014 (EP,US);
H01L2924/01322, H01L2924/00 (US,EP) |
Former IPC [2012/13] | H01L27/146, H01L31/0203, H01L31/0232 | ||
Former IPC [2010/50] | H01L31/02, H01L31/0203, H01L31/0232 | Designated contracting states | DE, FR, GB [2010/50] | Title | German: | Halbleitervorrichtung | [2014/33] | English: | Semiconductor device | [2014/33] | French: | Dispositif à semi-conducteur | [2014/33] |
Former [2010/50] | Halbleitervorrichtung und dessen Verfahren zur Herstellung | ||
Former [2010/50] | Semiconductor device and method for making the same | ||
Former [2010/50] | Dispositif à semi-conducteur et son procédé de fabrication | Examination procedure | 04.01.2013 | Amendment by applicant (claims and/or description) | 07.01.2013 | Examination requested [2013/08] | 19.03.2013 | Despatch of a communication from the examining division (Time limit: M04) | 29.07.2013 | Reply to a communication from the examining division | 23.08.2013 | Despatch of a communication from the examining division (Time limit: M05) | 15.01.2014 | Reply to a communication from the examining division | 06.08.2014 | Communication of intention to grant the patent | 18.11.2014 | Receipt of the translation of the claim(s) | 19.11.2014 | Fee for grant paid | 19.11.2014 | Fee for publishing/printing paid | Parent application(s) Tooltip | EP01310313.0 / EP1237202 | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20010310313) is 31.05.2007 | Opposition(s) | 01.10.2015 | No opposition filed within time limit [2015/50] | Fees paid | Renewal fee | 22.12.2010 | Renewal fee patent year 03 | 22.12.2010 | Renewal fee patent year 04 | 22.12.2010 | Renewal fee patent year 05 | 22.12.2010 | Renewal fee patent year 06 | 22.12.2010 | Renewal fee patent year 07 | 22.12.2010 | Renewal fee patent year 08 | 22.12.2010 | Renewal fee patent year 09 | 22.12.2010 | Renewal fee patent year 10 | 23.12.2011 | Renewal fee patent year 11 | 02.10.2012 | Renewal fee patent year 12 | 02.10.2013 | Renewal fee patent year 13 | 03.10.2014 | Renewal fee patent year 14 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]JP2000049319 ; | [A]JP2001008068 ; | [A]JPH11191865 ; | [A]JPH0799214 (TOSHIBA CORP, et al) |