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Extract from the Register of European Patents

EP About this file: EP2264218

EP2264218 - CVD precursors for silicon containing films [Right-click to bookmark this link]
Former [2010/51]Precursors for cvd silicon carbo-nitride films
[2012/30]
StatusNo opposition filed within time limit
Status updated on  20.09.2013
Database last updated on 14.09.2024
Most recent event   Tooltip01.07.2016Lapse of the patent in a contracting state
New state(s): IS		published on 03.08.2016  [2016/31]
Applicant(s)For all designated states
Air Products and Chemicals, Inc.
7201 Hamilton Boulevard
Allentown, PA 18195-1501 / US
[2010/51]
Inventor(s)01 / Xiao, Manchao
5534 Caballos Place
San Diego, CA 92130 / US
02 / Hochberg, Arthur Kenneth
1037 Santa Queta
Solana Beach, CA 92075 / US
 [2012/46]
Former [2010/51]01 / Xiao, Manchao
5534 Caballos Place
San Diego, CA 92130 / US
02 / Hochberg, Arthur Kenneth
1037 Santa Queta
Solana Beach, CA 92075 / US
Representative(s)Muir, Benjamin M. J.
Beck Greener
Fulwood House
12 Fulwood Place
London WC1V 6HR / GB
[N/P]
Former [2012/46]Muir, Benjamin M. J.
Beck Greener Fulwood House 12 Fulwood Place
London WC1V 6HR / GB
Former [2010/51]Muir, Benjamin M. J.
Beck Greener Fulwood House 12 Fulwood Place
London WC1V 6HR / GB
Application number, filing date10181347.511.05.2006
[2010/51]
Priority number, dateUS2005012986216.05.2005         Original published format: US 129862
[2010/51]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP2264218
Date:22.12.2010
Language:EN
[2010/51]
Type: B1 Patent specification 
No.:EP2264218
Date:14.11.2012
Language:EN
[2012/46]
Search report(s)(Supplementary) European search report - dispatched on:EP26.10.2010
ClassificationIPC:C23C16/36, C07F7/02, H01L21/02
[2012/30]
CPC:
C07F7/025 (EP,KR,US); H01L21/02219 (EP,KR,US); H01L21/02211 (US);
C09D5/00 (US); C23C16/36 (EP,KR,US); H01L21/02167 (EP,KR,US);
H01L21/02222 (US); H01L21/02271 (EP,KR,US); H01L21/02274 (US);
H01L21/0228 (US) (-)
Former IPC [2010/51]C23C16/36
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2010/51]
TitleGerman:Vorläufer für CVD-Siliziumenthaltenden-Schichten[2012/30]
English:CVD precursors for silicon containing films[2012/30]
French:Précurseurs CVD pour films à base de silicium[2012/30]
Former [2010/51]Vorläufer für CVD-Siliziumcarbonitrid-Schichten
Former [2010/51]Precursors for cvd silicon carbo-nitride films
Former [2010/51]Précurseurs pour films en carbonitrure de silicium au CVD
Examination procedure09.02.2011Amendment by applicant (claims and/or description)
09.02.2011Examination requested  [2011/12]
17.02.2012Despatch of a communication from the examining division (Time limit: M04)
14.05.2012Reply to a communication from the examining division
16.07.2012Communication of intention to grant the patent
05.10.2012Fee for grant paid
05.10.2012Fee for publishing/printing paid
Parent application(s)   TooltipEP06252488.9  / EP1724373
EP09161603.7  / EP2110459
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20060252488) is  05.03.2007
Opposition(s)15.08.2013No opposition filed within time limit [2013/43]
Fees paidRenewal fee
28.09.2010Renewal fee patent year 03
28.09.2010Renewal fee patent year 04
28.09.2010Renewal fee patent year 05
10.05.2011Renewal fee patent year 06
21.03.2012Renewal fee patent year 07
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU11.05.2006
AT14.11.2012
BE14.11.2012
CY14.11.2012
CZ14.11.2012
DK14.11.2012
EE14.11.2012
IS14.11.2012
LT14.11.2012
LV14.11.2012
MC14.11.2012
PL14.11.2012
RO14.11.2012
SE14.11.2012
SI14.11.2012
SK14.11.2012
TR14.11.2012
BG14.02.2013
GR15.02.2013
ES25.02.2013
PT14.03.2013
LU11.05.2013
CH31.05.2013
LI31.05.2013
[2016/31]
Former [2015/34]HU11.05.2006
AT14.11.2012
BE14.11.2012
CY14.11.2012
CZ14.11.2012
DK14.11.2012
EE14.11.2012
LT14.11.2012
LV14.11.2012
MC14.11.2012
PL14.11.2012
RO14.11.2012
SE14.11.2012
SI14.11.2012
SK14.11.2012
TR14.11.2012
BG14.02.2013
GR15.02.2013
ES25.02.2013
PT14.03.2013
LU11.05.2013
CH31.05.2013
LI31.05.2013
Former [2015/32]AT14.11.2012
BE14.11.2012
CY14.11.2012
CZ14.11.2012
DK14.11.2012
EE14.11.2012
LT14.11.2012
LV14.11.2012
MC14.11.2012
PL14.11.2012
RO14.11.2012
SE14.11.2012
SI14.11.2012
SK14.11.2012
TR14.11.2012
BG14.02.2013
GR15.02.2013
ES25.02.2013
PT14.03.2013
CH31.05.2013
LI31.05.2013
Former [2014/08]AT14.11.2012
BE14.11.2012
CY14.11.2012
CZ14.11.2012
DK14.11.2012
EE14.11.2012
LT14.11.2012
LV14.11.2012
MC14.11.2012
PL14.11.2012
RO14.11.2012
SE14.11.2012
SI14.11.2012
SK14.11.2012
BG14.02.2013
GR15.02.2013
ES25.02.2013
PT14.03.2013
CH31.05.2013
LI31.05.2013
Former [2014/03]AT14.11.2012
BE14.11.2012
CY14.11.2012
CZ14.11.2012
DK14.11.2012
EE14.11.2012
LT14.11.2012
LV14.11.2012
MC14.11.2012
PL14.11.2012
RO14.11.2012
SE14.11.2012
SI14.11.2012
SK14.11.2012
BG14.02.2013
GR15.02.2013
ES25.02.2013
PT14.03.2013
Former [2013/52]AT14.11.2012
BE14.11.2012
CY14.11.2012
CZ14.11.2012
DK14.11.2012
EE14.11.2012
LT14.11.2012
LV14.11.2012
PL14.11.2012
RO14.11.2012
SE14.11.2012
SI14.11.2012
SK14.11.2012
BG14.02.2013
GR15.02.2013
ES25.02.2013
PT14.03.2013
Former [2013/37]AT14.11.2012
BE14.11.2012
CZ14.11.2012
DK14.11.2012
EE14.11.2012
LT14.11.2012
LV14.11.2012
PL14.11.2012
RO14.11.2012
SE14.11.2012
SI14.11.2012
SK14.11.2012
BG14.02.2013
GR15.02.2013
ES25.02.2013
PT14.03.2013
Former [2013/35]AT14.11.2012
BE14.11.2012
CZ14.11.2012
DK14.11.2012
EE14.11.2012
LT14.11.2012
LV14.11.2012
PL14.11.2012
SE14.11.2012
SI14.11.2012
SK14.11.2012
BG14.02.2013
GR15.02.2013
ES25.02.2013
PT14.03.2013
Former [2013/34]AT14.11.2012
BE14.11.2012
DK14.11.2012
LT14.11.2012
LV14.11.2012
PL14.11.2012
SE14.11.2012
SI14.11.2012
BG14.02.2013
GR15.02.2013
ES25.02.2013
PT14.03.2013
Former [2013/31]AT14.11.2012
BE14.11.2012
LT14.11.2012
LV14.11.2012
PL14.11.2012
SE14.11.2012
SI14.11.2012
GR15.02.2013
ES25.02.2013
PT14.03.2013
Former [2013/28]BE14.11.2012
LT14.11.2012
LV14.11.2012
PL14.11.2012
SE14.11.2012
SI14.11.2012
GR15.02.2013
ES25.02.2013
PT14.03.2013
Former [2013/27]BE14.11.2012
LT14.11.2012
LV14.11.2012
PL14.11.2012
SE14.11.2012
SI14.11.2012
GR15.02.2013
ES25.02.2013
Former [2013/26]LT14.11.2012
LV14.11.2012
PL14.11.2012
SE14.11.2012
SI14.11.2012
GR15.02.2013
ES25.02.2013
Former [2013/24]LT14.11.2012
LV14.11.2012
PL14.11.2012
SE14.11.2012
GR15.02.2013
ES25.02.2013
Former [2013/23]LT14.11.2012
LV14.11.2012
PL14.11.2012
SE14.11.2012
ES25.02.2013
Former [2013/21]LT14.11.2012
SE14.11.2012
Former [2013/20]LT14.11.2012
Documents cited:Search[XD]JPH06132284  ;
 [X]EP1149934  (ASM JAPAN [JP]) [X] 1,10 * page 3, paragraphs 11,15; table 1 * * page 4, paragraph 16 * * page 5, paragraphs 29,30 * * page 6, paragraph 32 * * page 8, paragraph 43 * * page 9, paragraph 52 *;
 [X]WO02065508  (ASM INC [US]) [X] 1,10 * page 4, paragraphs 14,17 * * page 5, paragraph 21 - page 6, paragraph 23 *;
 [XP]WO2005093126  (AIR LIQUIDE [FR], et al) [XP] 1,10-15 * page 7, lines 3-16 * * page 9, paragraph 6 * * page 9, paragraph 6 ** page 12, lines 21-29 *;
 [XP]WO2006036538  (PRAXAIR TECHNOLOGY INC [US], et al) [XP] 1,8 * page 6, paragraph 17; claim 6 *;
 [XD]  - PATENT ABSTRACTS OF JAPAN, (19940805), vol. 018, no. 419, Database accession no. (E - 1589), & JP06132284 A 19940513 (KAWASAKI STEEL CORP) [XD] 1-3,7,8,11-15 * abstract *
 [X]  - SCHMIDBAUR, HUBERT; SCHUH, HEINZ, "Differences in reactivity of 1,4-disilabutane and n-tetrasilane towards secondary amines", ZEITSCHRIFT FÜR NATURFORSCHUNG B: CHEMICAL SCIENCES, (1990), vol. 45, no. 12, pages 1679 - 1683, XP009071468 [X] 1-3,7,8,11-15 * page 1682, column R, paragraph 5 * * page 1679, column L, paragraph 1 *
 [X]  - AYLETT, BERNARD J.; EMSLEY, JOHN, "N-silyl derivatives of cyclic secondary amines", JOURNAL OF THE CHEMICAL SOCIETY A: INORGANIC, PHYSICAL, THEORETICAL, London, UK, (1967), vol. 12, pages 1918 - 1921, XP009071485 [X] 1,5,6 * the whole document *
 [X]  - MITZEL, NORBERT W., "Simple silylhydrazines as models for Si-N .beta.-donor interactions in SiNN units", CHEMISTRY--A EUROPEAN JOURNAL , 4(4), 692-698 CODEN: CEUJED; ISSN: 0947-6539, (1998), XP002396294 [X] 1,9 * the whole document *

DOI:   http://dx.doi.org/10.1002/(SICI)1521-3765(19980416)4:4<692::AID-CHEM692>3.0.CO;2-0
 [X]  - ANDERSON, DAVID G.; RANKIN, DAVID W. H., "Isopropyldisilylamine and disisyl-tert-butylamine: preparation, spectroscopic properties, and molecular structure in the gas phase, determined by electron diffraction", JOURNAL OF THE CHEMICAL SOCIETY, DALTON TRANSACTIONS: INORGANIC CHEMISTRY, (1989), vol. 5, pages 779 - 783, XP009071483 [X] 1-3,7,9 * the whole document *
by applicantUS5234869
 JPH06132284
 US5874368
 US6153261
 US6391803
    - GARY E. MCGUIRE,, Process technology handbook, NOYES PUBLICATION, (1988), pages 289 - 301
    - WOLF; STANLEY; TALBERT; RICHARD N., Silicon Processing for the VLSI ERA, LATTICE PRESS, (1990), pages 20 - 22,327-3
    - A. K. HOCHBERG; D. L. O'MEARA, "Diethylsilane as a Silicon Source for the Deposition of Silicon Nitride and Silicon Oxynitride Films By LPCVD", MAT. RES. SOC. SYMP. PROC, (1991), vol. 204, pages 509 - 514
    - SORITA ET AL., "Mass Spectrometric and Kinetic Study of Low-Pressure Chemical Vapor Deposition of Si3N4 Thin Films From SiH2CI2 and NH3", J. ELECTRO. CHEM. SOC., (1994), vol. 141, no. 12, pages 3505 - 3511
    - AYLETT; EMSLEY, "The Preparation and Properties of Dimethylamino and Diethylamino Silane", J. CHEM. SOC., (1967), vol. A, pages 652 - 655
    - ANDERSON; RANKIN, "Isopropyldisilylamine and Disilyl-t-butylamine: Preparation, Spectroscopic Properties, and Molecular Structure in the Gas Phase, Determined by Electron Diffraction", J. CHEM. SOC. DALTON TRANS., (1989), pages 779 - 783
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.