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Extract from the Register of European Patents

EP About this file: EP2432004

EP2432004 - SEMICONDUCTOR DEVICE [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  14.06.2013
Database last updated on 15.06.2024
Most recent event   Tooltip14.06.2013Withdrawal of applicationpublished on 17.07.2013  [2013/29]
Applicant(s)For all designated states
Sumitomo Electric Industries, Ltd.
5-33, Kitahama 4-chome
Osaka-shi, Osaka 541-0041 / JP
[2012/12]
Inventor(s)01 / FUJIKAWA, Kazuhiro
Osaka Works of Sumitomo Electric Industries Ltd.
1-3 Shimaya 1-chome
Konohana-ku
Osaka-shi, Osaka 554-0024 / JP
02 / HARADA, Shin
Osaka Works of Sumitomo Electric Industries Ltd.
1-3 Shimaya 1-chome
Konohana-ku
Osaka-shi, Osaka 554-0024 / JP
03 / NISHIGUCHI, Taro
Itami Works of Sumitomo Electric Industries Ltd.
1-1 Koyakita 1-chome
Itami-shi, Hyogo 664-0016 / JP
04 / SASAKI, Makoto
Itami Works of Sumitomo Electric Industries Ltd.
1-1 Koyakita 1-chome
Itami-shi, Hyogo 664-0016 / JP
05 / NAMIKAWA, Yasuo
Itami Works of Sumitomo Electric Industries Ltd.
1-1 Koyakita 1-chome
Itami-shi, Hyogo 664-0016 / JP
06 / FUJIWARA, Shinsuke
Itami Works of Sumitomo Electric Industries Ltd.
1-1 Koyakita 1-chome
Itami-shi, Hyogo 664-0016 / JP
 [2012/39]
Former [2012/12]01 / FUJIKAWA, Kazuhiro
Osaka Works of SUMITOMO ELECTRIC INDUSTRIES LTD.
1-3 Shimaya 1-chome
Konohana-ku
Osaka-shi Osaka 554-0024 / JP
02 / HARADA, Shin
Osaka Works of SUMITOMO ELECTRIC INDUSTRIES LTD.
1-3 Shimaya 1-chome
Konohana-ku
Osaka-shi Osaka 554-0024 / JP
03 / NISHIGUCHI, Taro
Itami Works of SUMITOMO ELECTRIC INDUSTRIES LTD.
1-1 Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
04 / SASAKI, Makoto
Itami Works of SUMITOMO ELECTRIC INDUSTRIES LTD.
1-1 Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
05 / NAMIKAWA, Yasuo
Itami Works of SUMITOMO ELECTRIC INDUSTRIES LTD.
1-1 Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
06 / FUJIWARA, Shinsuke
Itami Works of SUMITOMO ELECTRIC INDUSTRIES LTD.
1-1 Koyakita 1-chome
Itami-shi Hyogo 664-0016 / JP
Representative(s)Grünecker Patent- und Rechtsanwälte PartG mbB
Leopoldstrasse 4
80802 München / DE
[N/P]
Former [2012/12]Grünecker, Kinkeldey, Stockmair & Schwanhäusser
Anwaltssozietät
Leopoldstrasse 4
80802 München / DE
Application number, filing date10774829.527.04.2010
WO2010JP57443
Priority number, dateJP2009011473711.05.2009         Original published format: JP 2009114737
JP2009021906524.09.2009         Original published format: JP 2009219065
JP2009022976401.10.2009         Original published format: JP 2009229764
JP2009024862129.10.2009         Original published format: JP 2009248621
JP2010002437005.02.2010         Original published format: JP 2010024370
[2012/12]
Filing languageJA
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2010131571
Date:18.11.2010
Language:JA
[2010/46]
Type: A1 Application with search report 
No.:EP2432004
Date:21.03.2012
Language:EN
[2012/12]
Search report(s)International search report - published on:JP18.11.2010
ClassificationIPC:H01L21/337, H01L21/02, H01L21/20, H01L29/808
[2012/12]
CPC:
H01L29/1608 (EP,US); H01L21/20 (KR); H01L29/32 (EP,US);
H01L29/66068 (EP,US); H01L29/808 (EP,US)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   SM,   TR [2012/12]
TitleGerman:HALBLEITERBAUELEMENT[2012/12]
English:SEMICONDUCTOR DEVICE[2012/12]
French:DISPOSITIF À SEMI-CONDUCTEURS[2012/12]
Entry into regional phase08.12.2011Translation filed 
08.12.2011National basic fee paid 
08.12.2011Search fee paid 
08.12.2011Designation fee(s) paid 
08.12.2011Examination fee paid 
Examination procedure04.03.2011Request for preliminary examination filed
International Preliminary Examining Authority: JP
08.12.2011Examination requested  [2012/12]
07.06.2013Application withdrawn by applicant  [2013/29]
Fees paidRenewal fee
29.03.2012Renewal fee patent year 03
26.04.2013Renewal fee patent year 04
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Cited inInternational search[A]JPH10223835  (HITACHI LTD, et al);
 [A]JPH113842  (NIPPON PILLAR PACKING);
 [A]JPH1187200  (TOSHIBA CORP);
 [A]WO0118872  (SIXON INC [JP], et al);
 [A]JP2002280531  (DENSO CORP);
 [Y]WO2004112150  (SUMITOMO ELECTRIC INDUSTRIES [JP], et al);
 [A]JP2005064383  (NAT INST OF ADV IND & TECHNOL);
 [X]JP2005294611  (TOYOTA MOTOR CORP, et al);
 [A]JP2006066722  (SHIKUSUON KK, et al);
 [Y]WO2006114999  (UNIV KYOTO [JP], et al)
by applicant   - M. NAKABAYASHI ET AL., "Growth of Crack-free 100mm-diameter 4H-SiC Crystals with Low Micropipe Densities", MATER. SCI. FORUM, (2009), vol. 600-603, pages 3 - 6
    - M. NAKABAYASHI ET AL., "Growth of Crack-free 1 00mm-diameter 4H-SiC Crystals with Low Micropipe Densities", MATER. SCI. FORUM, (2009), vol. 600-603, pages 3 - 6
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.