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EP2622630

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EP About this file: EP2622630

EP2622630 - METHODS FOR PROCESSING A SEMICONDUCTOR WAFER, A SEMICONDUCTOR WAFER AND A SEMICONDUCTOR DEVICE [Right-click to bookmark this link]
Status	The application is deemed to be withdrawn Status updated on 19.08.2016 Database last updated on 24.08.2024
Most recent event Tooltip	19.08.2016	Application deemed to be withdrawn	published on 21.09.2016 [2016/38]
Applicant(s)	For all designated states Freescale Semiconductor, Inc. 6501 Willam Cannon Drive West Austin, Texas 78735 / US
	[2013/32]
Inventor(s)	01 / RENAUD, Philippe 93 chemin de Cassagnère F-31270 Cugnaux / FR
	02 / SERRANO, Roland 3 impasse de Ia Touraine F-31100 Toulouse / FR
	[2013/32]
Representative(s)	Ferro, Frodo Nunes Freescale Semiconducteurs France SAS C/o Optimus Patents Limited Grove House, Lutyens Close Chineham Court Basingstoke, Hampshire RG24 8AG / GB
	[N/P]
Former [2013/32]	Ferro, Frodo Nunes Freescale Semiconducteurs France SAS c/o Impetus IP LTD Grove House, Lutyens Close Chineham Court Basingstoke, Hampshire RG24 8AG / GB
Application number, filing date	10798596.2	30.09.2010
	WO2010IB03017
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO2012042292
	Date:	05.04.2012
	Language:	EN
	[2012/14]
	Type:	A1 Application with search report
	No.:	EP2622630
	Date:	07.08.2013
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 05.04.2012 takes the place of the publication of the European patent application.
	[2013/32]
Search report(s)	International search report - published on:	EP	05.04.2012
Classification	IPC:	H01L21/02, H01L21/302, H01L21/78	[2013/32]
	CPC:	H01L21/0254 (EP,US); H01L21/02005 (EP,US); H01L21/302 (EP,US); H01L21/78 (EP,US); H01L29/2003 (US); H01L21/02389 (EP,US); (+) H01L21/02658 (EP,US) (-)
Designated contracting states	AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, SE, SI, SK, SM, TR [2013/32]
Title	German:	VERFAHREN ZUR VERARBEITUNG EINES HALBLEITERWAFERS, HALBLEITERWAFER UND HALBLEITERBAUELEMENT	[2013/32]
	English:	METHODS FOR PROCESSING A SEMICONDUCTOR WAFER, A SEMICONDUCTOR WAFER AND A SEMICONDUCTOR DEVICE	[2013/32]
	French:	PROCÉDÉS DE TRAITEMENT DE TRANCHE DE SEMI-CONDUCTEUR, TRANCHE DE SEMI-CONDUCTEUR ET DISPOSITIF À SEMI-CONDUCTEUR	[2013/32]
Entry into regional phase	02.05.2013	National basic fee paid
	02.05.2013	Designation fee(s) paid
	02.05.2013	Examination fee paid
Examination procedure	deleted	Communication of intention to grant the patent
	02.05.2013	Examination requested [2013/32]
	23.10.2013	Amendment by applicant (claims and/or description)
	01.04.2016	Application deemed to be withdrawn, date of legal effect [2016/38]
	02.05.2016	Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time [2016/38]
Fees paid	Renewal fee
	02.05.2013	Renewal fee patent year 03
	27.09.2013	Renewal fee patent year 04
	29.09.2014	Renewal fee patent year 05
	Penalty fee
	Additional fee for renewal fee
	30.09.2015	06 M06 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Cited in	International search	[XI]JPH10150218 (HITACHI CABLE) [X] 1-3,5,11 * paragraphs [0007] - [0026] * [I] 4,6-10,12,13;
		[XI]US6037634 (AKIYAMA HAJIME [JP]) [X] 1-3,5,8,11,12 * column 15, line 30 - column 16, line 45; figures 21-24 * * column 18, lines 37-52 * [I] 4,6,7,9,10,13;
		[XI]US6403449 (BALL MICHAEL B [US]) [X] 1-3,5,9,11-13 * column 2, lines 25-47 * * column 3, line 21 - column 4, line 42; figures 3-7 * [I] 4,6-8,10;
		[XI]US2006024921 (HUANG JUI-TSEN [TW]) [X] 1-3,5,11,12 * paragraphs [0002] - [0005] - [0011] , [0029] - [0033]; figures 3A-3D * [I] 4,6-10,13;
		[I]US2008210949 (MAKABE ISAO [JP], et al) [I] 1-13 * paragraphs [0006] , [0007] , [0015] - [0024] *;
		[XI]US2008233716 (ABE KAZUHIDE [JP]) [X] 1-3,5,7,8,11,12 * the whole document * [I] 4,6,9,10,13;
		[XI]US2009175305 (KOHDA SHINICHI [JP]) [X] 1-3,5,6,8,9,11-13 * the whole document * [I] 4,7,10;
		[E]WO2010129908 (QUALCOMM INC [US], et al) [E] 1,2,7-13* paragraphs [0037] - [0055]; figures 5-8 *
	by applicant	US6254718
		US6280645
		US6303511
		US6770504

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