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Extract from the Register of European Patents

EP About this file: EP2521805

EP2521805 - INSULATION DEVICE OF SINGLE CRYSTAL GROWTH DEVICE AND SINGLE CRYSTAL GROWTH DEVICE INCLUDING THE SAME [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  21.02.2014
Database last updated on 03.10.2024
Most recent event   Tooltip21.02.2014Withdrawal of applicationpublished on 26.03.2014  [2014/13]
Applicant(s)For all designated states
LG Siltron Inc.
274, Imsu-dong Gumi-si
Gyeongbuk 730-350 / KR
[2012/46]
Inventor(s)01 / LEE, Sang-Hoon
103-507, Jisan Hyundae Mansion
Jisan-dong
Suseong-gu, Daegu 708-091 / KR
02 / OH, Hyun-Jung
104-2102 Daerim e-pyenhansesang apt.
Suseong 4 ga
Suseong-gu
Daegu 706-110 / KR
03 / CHOI, Il-Soo
101-304 Hyundai apt.
Bonggok-dong
Gumi-si Gyeongbuk 730-200 / KR
 [2013/11]
Former [2012/46]01 / LEE, Sang-Hoon
202-1 Yongsan2cha Seohanhwasung Town
919 Yongsan-dong
Dalseo-gu
Daegu 704-130 / KR
02 / OH, Hyun-Jung
104-2102 Daerim e-pyenhansesang apt.
Suseong 4 ga
Suseong-gu
Daegu 706-110 / KR
03 / CHOI, Il-Soo
101-304 Hyundai apt.
Bonggok-dong
Gumi-si Gyeongbuk 730-200 / KR
Representative(s)Novagraaf Technologies
Bâtiment O2
2, rue Sarah Bernhardt
CS90017
92665 Asnières-sur-Seine Cedex / FR
[N/P]
Former [2012/46]Novagraaf Technologies
122 rue Edouard Vaillant
92593 Levallois-Perret Cedex / FR
Application number, filing date10842278.321.07.2010
WO2010KR04775
Priority number, dateKR2010000051805.01.2010         Original published format: KR 20100000518
[2012/46]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2011083898
Date:14.07.2011
Language:EN
[2011/28]
Type: A1 Application with search report 
No.:EP2521805
Date:14.11.2012
Language:EN
The application published by WIPO in one of the EPO official languages on 14.07.2011 takes the place of the publication of the European patent application.
[2012/46]
Search report(s)International search report - published on:KR14.07.2011
(Supplementary) European search report - dispatched on:EP01.08.2013
ClassificationIPC:C30B15/00, C30B35/00, C30B29/06, H01L21/02
[2012/46]
CPC:
C30B35/00 (EP,US); C30B11/003 (EP,US); C30B15/14 (EP,US);
Y10T117/1068 (EP,US)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   SM,   TR [2012/46]
TitleGerman:ISOLATIONSVORRICHTUNG FÜR EINE EINZELKRISTALLZÜCHTUNGSVORRICHTUNG SOWIE EINZELKRISTALLZÜCHTUNGSVORRICHTUNG DAMIT[2012/46]
English:INSULATION DEVICE OF SINGLE CRYSTAL GROWTH DEVICE AND SINGLE CRYSTAL GROWTH DEVICE INCLUDING THE SAME[2012/46]
French:DISPOSITIF D'ISOLATION POUR DISPOSITIF DE CROISSANCE DE MONOCRISTAUX ET DISPOSITIF DE CROISSANCE DE MONOCRISTAUX L'INCLUANT[2012/46]
Entry into regional phase10.07.2012National basic fee paid 
10.07.2012Search fee paid 
10.07.2012Designation fee(s) paid 
10.07.2012Examination fee paid 
Examination procedure10.07.2012Amendment by applicant (claims and/or description)
10.07.2012Examination requested  [2012/46]
14.02.2014Application withdrawn by applicant  [2014/13]
Fees paidRenewal fee
17.07.2012Renewal fee patent year 03
11.07.2013Renewal fee patent year 04
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Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[XI]WO2008025872  (OKMETIC OYJ [FI], et al) [X] 1-3,7-11,15 * figures 1, 2 * * page 14, line 34 - line 35 * * page 15, line 3 - line 4 * * page 15, line 6 - line 7 * * page 33, line 12 - line 15 * [I] 4-6,12-14;
 [XI]JPH07277869  (SHOWA DENKO KK) [X] 1,2,9,10 * example 2 * * figures 1-5 * [I] 3-8,11-15;
 [XI]US2007101932  (SCHOWALTER LEO J [US], et al) [X] 1,9 * figure 2 * [I] 2-8,10-15;
 [A]US2009029307  (OHARA TAKASHI [JP]) [A] 1-15 * figure 1 *;
 [A]WO2006072634  (TEN FORSCHUNG EV FRAUNHOFER [DE], et al) [A] 1-15 * page 5, lines 13-17 * * page 14, line 28 - page 15, line 3 *;
 [A]EP1498515  (KOSTIN VLADIMIR VLADIMIROVICH [RU]) [A] 1-15 * the whole document *;
 [A]JPH02157181  (TOSHIBA CORP) [A] 1-15 * the whole document *;
 [A]  - HUANG L Y ET AL, "On the hot-zone design of Czochralski silicon growth for photovoltaic applications", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, (20040201), vol. 261, no. 4, doi:10.1016/J.JCRYSGRO.2003.09.039, ISSN 0022-0248, pages 433 - 443, XP004484155 [A] 1-15 * the whole document *

DOI:   http://dx.doi.org/10.1016/j.jcrysgro.2003.09.039
International search[X]JP2009274928  (SUMCO CORP);
 [A]JP2009274926  (SUMCO CORP);
 [A]JP2001010893  (TOSHIBA CERAMICS CO);
 [A]JP2004137089  (TOSHIBA CERAMICS CO);
 [A]KR100891570B  (SILTRON INC [KR])
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.