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EP2469584
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EP About this file: EP2469584
| EP2469584 - Method of implanting ions [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 07.10.2016 Database last updated on 07.10.2024 | Most recent event Tooltip | 07.10.2016 | Withdrawal of application | published on 09.11.2016 [2016/45] | Applicant(s) | For all designated states Semequip, Inc. 34 Sullivan Road, Unit 21 Billerica Massachusetts, 01862 / US | [2012/26] | Inventor(s) | 01 /
Krull, Wade, A. 8 Smith Street Marblehead, MA 01945 / US | 02 /
Horsky, Thomas, N. 816 Depot Road Boxborough, MA 01719 / US | [2012/26] | Representative(s) | Vossius & Partner Patentanwälte Rechtsanwälte mbB Siebertstrasse 3 81675 München / DE | [N/P] |
| Former [2014/27] | Vossius & Partner Siebertstrasse 4 81675 München / DE | ||
| Former [2012/26] | Paustian, Othmar BOETERS & LIECK Oberanger 32 80331 München / DE | Application number, filing date | 11010255.5 | 06.12.2006 | [2012/26] | Priority number, date | US20050748797P | 09.12.2005 Original published format: US 748797 P | [2012/32] |
| Former [2012/26] | US200574879705P | 09.12.2005 | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP2469584 | Date: | 27.06.2012 | Language: | EN | [2012/26] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 31.05.2012 | Classification | IPC: | H01L21/425, H01L21/265 | [2012/26] | CPC: |
H01L21/26513 (EP,US);
H01L21/425 (KR);
H01L21/265 (KR);
H01L21/26506 (EP,US);
H01L21/26566 (EP,US);
H01L21/2658 (EP,US);
H01L21/823814 (EP,US);
H01L21/823842 (EP,US);
H01L29/165 (EP,US);
| Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HU, IE, IS, IT, LI, LT, LU, LV, MC, NL, PL, PT, RO, SE, SI, SK, TR [2012/26] | Title | German: | Verfahren zur Ionenimplantierung | [2012/26] | English: | Method of implanting ions | [2012/26] | French: | Procédé d'implantation d'ions | [2012/26] | Examination procedure | 21.12.2012 | Examination requested [2013/07] | 04.02.2013 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the Extended European Search Report/Written Opinion of the International Searching Authority/International Preliminary Examination Report/Supplementary international search report not received in time | 13.02.2013 | Amendment by applicant (claims and/or description) | 04.10.2016 | Application withdrawn by applicant [2016/45] | Parent application(s) Tooltip | EP06844937.0 / EP1958245 | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20060844937) is 10.02.2010 | Request for further processing for: | The application is deemed to be withdrawn due to failure to reply to the Extended European Search Report/Written Opinion of the International Searching Authority/International Preliminary Examination Report/Supplementary international search report/Supplementary European search report | 25.02.2013 | Request for further processing filed | 25.02.2013 | Full payment received (date of receipt of payment) Request granted | 06.03.2013 | Decision despatched | Fees paid | Renewal fee | 19.03.2012 | Renewal fee patent year 03 | 19.03.2012 | Renewal fee patent year 04 | 19.03.2012 | Renewal fee patent year 05 | 19.03.2012 | Renewal fee patent year 06 | 27.02.2013 | Renewal fee patent year 07 | 27.12.2013 | Renewal fee patent year 08 | 11.12.2014 | Renewal fee patent year 09 | 10.12.2015 | Renewal fee patent year 10 | Penalty fee | Additional fee for renewal fee | 31.12.2012 | 07 M06 Fee paid on 27.02.2013 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XI]US2004166612 (MAYDAN DAN [US], et al) [X] 1,18 * paragraph [0336] * [I] 2-17; | [XI]US2005181621 (BORLAND JOHN O [US], et al) [X] 1 * paragraph [0061] * [I] 2-17; | [A]DE4440072 (INST HALBLEITERPHYSIK GMBH [DE]) [A] 1-17 * column 3, lines 21-32 * | [XPI] - SEKAR K ET AL, "Optimization of annealing for ClusterBoron(R) and ClusterCarbon(TM) PMOS SDE", 14TH IEEE INTERNATIONAL CONFERENCE ON ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS, RTP 2006 - 14TH IEEE INTERNATIONAL CONFERENCE ON ADVANCED THERMAL PROCESSING OF SEMICONDUCTORS, RTP 2006 2006 INST. OF ELEC. AND ELEC. ENG. COMPUTER SOCIETY US, (20061010), pages 251 - 254, XP002548546 [XP] 1,2,5,6,18 * the whole document * [I] 3,4,7-17 | [X] - VOLZ K ET AL, "Silicon carbide and amorphous carbon film formation by plasma immersion ion implantation: a comparison of methane and toluene as plasma forming gases", SURFACE AND COATINGS TECHNOLOGY ELSEVIER SWITZERLAND, (20010202), vol. 136, no. 1-3, ISSN 0257-8972, pages 197 - 201, XP002548547 [X] 1 * the whole document * DOI: http://dx.doi.org/10.1016/S0257-8972(00)01055-0 | by applicant | US5497006 | US6452338 | US6686595 | US2004002202 | US5354381 | US5558718 | US6207005 | WO2004003973 | - E.J. COLLART; S.B. FELCH; H. GRAOUI; D. KIRKWOOD; B.J. PAWLAK; P.P. ABSIL; S. SEVRI; T. JANSSENS; W. VANDERVORST, "Co-Implantation with Conventional Spike Anneal Solutions for 45nm Ultra-Shallow Junction Formation", PROCEEDINGS OF THE EIGHT INTERNATIONAL WORKSHOP ON: FABRICATION, CHARACTERIZATION AND MODELLING OF ULTRA-SHALLOW DOPING PROFILES IN SEMICONDUCTORS, (200506), page 327 | - N. COWERN; B. COLOMBEAU; J. GRAOUI; M. FOAD, COMPUTATIONAL MODELING OF CO- IIMPLANTED CARBON FOR 65NM NODE USJ FORMATION, page 300 | - S. RIZK; Y.M. HADDARA; A. SIBAJA-HERNANDEZ, MODELING THE SUPPRESSION OF BORON DIFFUSION IN SI/SIGE DUE TO CARBON INCORPORATION, page 315 | - L. S. ROBERTSON; R. BRINDOS; K. S. JONES, "The effect of impurities and activation of ion implanted boron in silicon", MAT. RES. SOC. SYMP., (2000), vol. 610 | - MARK E. LAW; MICHELLE D. GRIGLIONE; MISTY NORTHRIDGE, INFLUENCE OF CARBON ON THE DIFFUSION OF INTERSTITIALS AND BORON IN SILICON | - P.A. STOLK; H.-J. GOSSMANN; D. J. EAGLESHAM; D. J. JACOBSON; H. S. LUFTMAN; J. M. POATE, "Understanding and controlling transient enhanced dopant diffusion in silicon", MAT. RES. SOC. SYMP. PROC., (1995), vol. 354, pages 307 - 318 | - M. UEDA; H. REUTHER; R. GUNZEL; A. F. BELOTO; E. ABRAMOF; L. A. BERNI, "High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation", NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH B, (2001), vol. 175-177, pages 715 - 720 | - JORG K.; N. LINDNER, "Ion beam synthesis of buried SiC layers in silicon: Basic physical processes", NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH B, (2001), vol. 178, pages 44 - 54 | - J. K. N. LINDNER; W. REIBER; B. STRITZKER, "Mechanisms of SiC Formation in the Ion Beam Synthesis of 3C-SiC Layers in Silicon", MATERIALS SCIENCE FORUM, (1998), vol. 264-268, pages 215 - 218 | - M. UEDA ET AL., "High dose nitrogen and carbon shallow implantation in Si by plasma immersion ion implantation", NUCLEAR INSTRUMENTS AND METHODS IN PHYSICS RESEARCH B, (2001), vol. 175-177, pages 715 - 720 | - MASAHIRO DEGUCHI; AKIHISA YOSHIDA; MASATOSHI KITAGAWA, "B-SiC formation by low-energy ion-doping technique", JAPANESE JOURNAL OF APPLIED PHYSICS, (199008), vol. 29, no. 8, pages L 1493 - L 1496 | - A. VANDERPOOL; A. BUDREVICH; M. TAYLOR, CONTROL OF PHOSPHORUS TRANSIENT ENHANCED DIFFUSION USING CO-IMPLANTATION, PROCEEDINGS OF THE 16TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, (200606), page 41 | - A. RENAU; J. T. SCHEUER, "Comparison of Plasma Doping and Beamline Technologies for Low energy Ion Implantation", IEEE PROCEEDINGS OF THE 2002 14TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, TAOS, NM, USA, (20020922), pages 151 - 156 | - R. B. LIEBERT; S.R. WALTHER; S. B. FELCH; Z. FANG; B. PEDERSEN; D. HACKER, "Plasma Doping System for 200mm and 300mm Wafers", PROCEEDINGS, 13TH INT. CONF. ION IMPLANT. TECH., IEEE, (2000), pages 472 - 475 |