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Extract from the Register of European Patents

EP About this file: EP2315288

EP2315288 - 2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material [Right-click to bookmark this link]
StatusThe application has been withdrawn
Status updated on  03.02.2012
Database last updated on 24.08.2024
Most recent event   Tooltip03.02.2012Withdrawal of applicationpublished on 07.03.2012  [2012/10]
Applicant(s)For all designated states
Electronics and Telecommunications Research Institute
161 Gajeong-dong
Yuseong-gu
Daejeon 305-700 / KR
[N/P]
Former [2011/17]For all designated states
Electronics and Telecommunications Research Institute
161 Gajeong-dong Yuseong-gu
Daejeon 305-700 / KR
Inventor(s)01 / Kim, Hyun Tak
206-1505 Expo Apt. Jeonmin-dong Yusong-gu
Daejeon-city / KR
02 / Youn, Doo Hyeb
104-1104 Expo Apt. Jeonmin-dong Yusong-gu
Daejeon-city / KR
03 / Chae, Byung Gyu
313-302 Songgang Green Apt. Songgang-dong Yusong-gu
Daejeon-city / KR
04 / Kang, Kwang Yong
110-802 Hanwool Apt. Shinsung-dong Yusong-gu
Daejeon-city / KR
05 / Lim, Yong Sik
2-203 Samsung Apt. 771 Geumneung-dong Choongju-city
Chungcheongbuk-do / KR
06 / Kim, Gyungock
101-805 Shinsung Apt. 622 Shinsa-dong Gangnam-gu
Seoul / KR
07 / Maeng, Sunglyul
209 Green Mention 487-35 Mochung-dong Heungdeok-gu Chungju-city
Chungcheongbuk-do / KR
08 / Kim, Seong Hyun
115-26, Goejeong-dong Seo-gu
Daejeon-city / KR
 [2011/17]
Representative(s)Betten & Resch
Patent- und Rechtsanwälte PartGmbB
Maximiliansplatz 14
80333 München / DE
[N/P]
Former [2011/17]Betten & Resch
Patentanwälte Theatinerstrasse 8
80333 München / DE
Application number, filing date11151106.914.12.2004
[2011/17]
Priority number, dateKR2004005509615.07.2004         Original published format: KR 20040055096
[2011/17]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP2315288
Date:27.04.2011
Language:EN
[2011/17]
Type: A3 Search report 
No.:EP2315288
Date:06.07.2011
[2011/27]
Search report(s)(Supplementary) European search report - dispatched on:EP06.06.2011
ClassificationIPC:H01L49/00
[2011/17]
CPC:
H10N70/823 (EP,KR,US); H10N70/20 (EP,KR,US); H10N70/026 (EP,KR,US);
H10N70/826 (EP,KR,US); H10N70/881 (EP,KR,US); H10N70/8833 (EP,KR,US);
H10N70/8836 (EP,KR,US); H10N70/884 (EP,KR,US); H10N99/03 (KR) (-)
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   MC,   NL,   PL,   PT,   RO,   SE,   SI,   SK,   TR [2011/17]
TitleGerman:Halbleiteranordnung mit zwei Anschlußklemmen mit einem Halbleitermaterial mit einem abrupten Metall-Isolator-Übergang[2011/17]
English:2-terminal semiconductor device using abrupt metal-insulator transition semiconductor material[2011/17]
French:Dispositif semiconducteur à deux bornes avec un matériau semiconducteur à transistion abrupt métal-isolateur[2011/17]
Examination procedure04.01.2012Amendment by applicant (claims and/or description)
09.01.2012Examination requested  [2012/08]
30.01.2012Application withdrawn by applicant  [2012/10]
Parent application(s)   TooltipEP04257769.2  / EP1617482
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20040257769) is  20.11.2009
Fees paidRenewal fee
17.05.2011Renewal fee patent year 03
17.05.2011Renewal fee patent year 04
17.05.2011Renewal fee patent year 05
17.05.2011Renewal fee patent year 06
17.05.2011Renewal fee patent year 07
02.01.2012Renewal fee patent year 08
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Documents cited:Search[XA]US2003054615  (KIM HYUN-TAK [KR], et al);
 [E]EP1530244  (KOREA ELECTRONICS TELECOMM [KR]);
by applicantUS5687112
 US6624463
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.