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EP2562791
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EP About this file: EP2562791
| EP2562791 - METHOD FOR PRODUCING SEMICONDUCTOR DEVICE [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 06.09.2013 Database last updated on 26.07.2024 | Most recent event Tooltip | 06.09.2013 | Withdrawal of application | published on 09.10.2013 [2013/41] | Applicant(s) | For all designated states Sharp Kabushiki Kaisha 22-22, Nagaike-cho Abeno-ku Osaka-shi, Osaka 545-8522 / JP | [N/P] |
| Former [2013/09] | For all designated states Sharp Kabushiki Kaisha 22-22, Nagaike-cho Abeno-ku Osaka-shi, Osaka 545-8522 / JP | Inventor(s) | 01 /
KOHIRA, Masatsugu c/o Sharp Kabushiki Kaisha 22-22, Nagaike-cho Abeno-ku Osaka-shi, Osaka 545-8522 / JP | [2013/09] | Representative(s) | Müller Hoffmann & Partner Patentanwälte mbB St.-Martin-Straße 58 81541 München / DE | [N/P] |
| Former [2013/09] | Müller - Hoffmann & Partner Patentanwälte Innere Wiener Strasse 17 81667 München / DE | Application number, filing date | 11772076.3 | 21.04.2011 | WO2011JP59845 | Priority number, date | JP20100099762 | 23.04.2010 Original published format: JP 2010099762 | [2013/09] | Filing language | JA | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2011132744 | Date: | 27.10.2011 | Language: | JA | [2011/43] | Type: | A1 Application with search report | No.: | EP2562791 | Date: | 27.02.2013 | Language: | EN | [2013/09] | Search report(s) | International search report - published on: | JP | 27.10.2011 | Classification | IPC: | H01L21/22, H01L21/225, H01L21/383, H01L31/04 | [2013/09] | CPC: |
H01L21/22 (KR);
H01L21/383 (KR);
H01L31/04 (KR);
H01L31/0682 (EP,US);
H01L31/1804 (EP,US);
H01L21/223 (EP,US);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2013/09] | Title | German: | VERFAHREN ZUR HERSTELLUNG EINER HALBLEITERVORRICHTUNG | [2013/09] | English: | METHOD FOR PRODUCING SEMICONDUCTOR DEVICE | [2013/09] | French: | PROCÉDÉ DE FABRICATION DE DISPOSITIF À SEMI-CONDUCTEUR | [2013/09] | Entry into regional phase | 21.11.2012 | Translation filed | 21.11.2012 | National basic fee paid | 21.11.2012 | Search fee paid | 21.11.2012 | Designation fee(s) paid | 21.11.2012 | Examination fee paid | Examination procedure | 21.11.2012 | Examination requested [2013/09] | 28.08.2013 | Application withdrawn by applicant [2013/41] | Fees paid | Renewal fee | 26.04.2013 | Renewal fee patent year 03 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Cited in | International search | [X]WO2007020833 (SHARP KK [JP], et al); | [Y]JPH0653135 (DU PONT) | by applicant | JP2007049079 |