EP2718965 - METHOD FOR PRODUCING A FIELD EFFECT TRANSISTOR WITH IMPLANTATION THROUGH THE SPACERS [Right-click to bookmark this link] | Status | Request for examination was made Status updated on 14.03.2014 Database last updated on 31.08.2024 | Most recent event Tooltip | 05.08.2015 | New entry: Additional fee for renewal fee: despatch of communication + time limit | Applicant(s) | For all designated states Commissariat à l'Énergie Atomique et aux Énergies Alternatives Bâtiment le Ponant D 25 rue Leblanc 75015 Paris / FR | For all designated states STMicroelectronics, Inc. 750 Canyon Drive, Suite 300 Coppell, TX 75019 / US | [2014/16] | Inventor(s) | 01 /
POSSEME, Nicolas 32 Chemin Louis Le Guennec F-29660 Carantec / FR | 02 /
GRENOUILLET, Laurent 171 B Chemin des Vignes F-38140 Rives / FR | 03 /
LE TIEC, Yannick 70 Chemin des trois Marie F-38920 Crolles / FR | 04 /
LOUBET, Nicolas 24 Knights Bridge Apt D Guilderland, New York 12084 / US | 05 /
VINET, Maud 171 B Chemin des Vignes F-38140 Rives / FR | [2014/16] | Representative(s) | Talbot, Alexandre, et al Cabinet Hecké 28 Cours Jean Jaurès 38000 Grenoble / FR | [N/P] |
Former [2014/16] | Talbot, Alexandre, et al Cabinet Hecké Europole 10, rue d'Arménie - BP 1537 38025 Grenoble Cedex 1 / FR | Application number, filing date | 11867399.5 | 09.06.2011 | WO2011US39774 | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2012170027 | Date: | 13.12.2012 | Language: | EN | [2012/50] | Type: | A1 Application with search report | No.: | EP2718965 | Date: | 16.04.2014 | Language: | EN | The application published by WIPO in one of the EPO official languages on 13.12.2012 takes the place of the publication of the European patent application. | [2014/16] | Search report(s) | International search report - published on: | US | 13.12.2012 | (Supplementary) European search report - dispatched on: | EP | 10.10.2014 | Classification | IPC: | H01L21/336, H01L21/265 | [2014/46] | CPC: |
H01L21/823418 (EP,US);
H01L29/66477 (US);
H01L21/2652 (EP,US);
H01L21/2658 (EP,US);
H01L21/84 (EP,US);
H01L29/66772 (EP,US);
|
Former IPC [2014/16] | H01L21/336 | Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2014/16] | Title | German: | VERFAHREN ZUR HERSTELLUNG EINES FELDEFFEKTTRANSISTORS MIT IMPLANTATION DURCH DIE ABSTANDSHALTER | [2014/16] | English: | METHOD FOR PRODUCING A FIELD EFFECT TRANSISTOR WITH IMPLANTATION THROUGH THE SPACERS | [2014/16] | French: | PROCÉDÉ DE FABRICATION D'UN TRANSISTOR À EFFET DE CHAMP COMPORTANT UNE IMPLANTATION À TRAVERS LES ESPACEURS | [2014/16] | Entry into regional phase | 04.12.2013 | National basic fee paid | 04.12.2013 | Search fee paid | 04.12.2013 | Designation fee(s) paid | 04.12.2013 | Examination fee paid | Examination procedure | 04.12.2013 | Amendment by applicant (claims and/or description) | 04.12.2013 | Examination requested [2014/16] | 18.06.2015 | Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time | Fees paid | Renewal fee | 04.12.2013 | Renewal fee patent year 03 | 31.03.2014 | Renewal fee patent year 04 | Penalty fee | Additional fee for renewal fee | 30.06.2015 | 05   M06   Not yet paid |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US5960322 (XIANG QI [US], et al) [A] 1 * figures 3-6 *; | [A]WO0122487 (KONINKL PHILIPS ELECTRONICS NV [NL], et al) [A] 1* page 10, line 27 - page 11, line 7 *; | [XY]US6391733 (FISHER PHILIP A [US]) [X] 1 * column 2, line 44 - line 48 * * column 1, lines 20-23 * * column 4, line 54 - column 5, line 18 * * column 5, line 19 - line 34 * [Y] 2-6; | [A]EP1294026 (SHARP KK [JP]) [A] 1 * figure 1 *; | [Y]US2005255660 (LIN CHUN TE [TW], et al) [Y] 3 * abstract * * paragraphs [0019] - [0022] *; | [Y] - SATO Y ET AL, "Influence of Doping Gradient near a Channel End on Parasitic Series Resistance of Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field-Effect Transistors", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, (20041001), vol. 43, no. 10, doi:10.1143/JJAP.43.6948, ISSN 0021-4922, pages 6948 - 6956, XP001516447 [Y] 2,4 * page 6951, column r - page 6952, column r; figure 12 * DOI: http://dx.doi.org/10.1143/JJAP.43.6948 | [Y] - FENOUILLET-BERANGER C ET AL, "Impact of a 10nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32nm node and below", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 54, no. 9, ISSN 0038-1101, (20100901), pages 849 - 854, (20100608), XP027114250 [Y] 5,6 * figures 1,2 * | International search | [Y]US4829356 (ARNDT JUERGEN [DE]); | [Y]US5441899 (NAKAI TETSUYA [JP], et al); | [Y]US2005009348 (GHYSELEN BRUNO [FR], et al); | [Y]US7144786 (VAN BENTUM RALF [DE], et al) |