Deutsch English Français

Contact

EP2718965

European procedure

Quick help

Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability
Register Forum

2022.02.11

More...

News flashes

News Flashes

New version of the European Patent Register – SPC proceedings information in the Unitary Patent Register.

2024-07-24

More...

Extract from the Register of European Patents

EP About this file: EP2718965

EP2718965 - METHOD FOR PRODUCING A FIELD EFFECT TRANSISTOR WITH IMPLANTATION THROUGH THE SPACERS [Right-click to bookmark this link]
Status	Request for examination was made Status updated on 14.03.2014 Database last updated on 31.08.2024
Most recent event Tooltip	05.08.2015	New entry: Additional fee for renewal fee: despatch of communication + time limit
Applicant(s)	For all designated states Commissariat à l'Énergie Atomique et aux Énergies Alternatives Bâtiment le Ponant D 25 rue Leblanc 75015 Paris / FR
	For all designated states STMicroelectronics, Inc. 750 Canyon Drive, Suite 300 Coppell, TX 75019 / US
	[2014/16]
Inventor(s)	01 / POSSEME, Nicolas 32 Chemin Louis Le Guennec F-29660 Carantec / FR
	02 / GRENOUILLET, Laurent 171 B Chemin des Vignes F-38140 Rives / FR
	03 / LE TIEC, Yannick 70 Chemin des trois Marie F-38920 Crolles / FR
	04 / LOUBET, Nicolas 24 Knights Bridge Apt D Guilderland, New York 12084 / US
	05 / VINET, Maud 171 B Chemin des Vignes F-38140 Rives / FR
	[2014/16]
Representative(s)	Talbot, Alexandre, et al Cabinet Hecké 28 Cours Jean Jaurès 38000 Grenoble / FR
	[N/P]
Former [2014/16]	Talbot, Alexandre, et al Cabinet Hecké Europole 10, rue d'Arménie - BP 1537 38025 Grenoble Cedex 1 / FR
Application number, filing date	11867399.5	09.06.2011
	WO2011US39774
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO2012170027
	Date:	13.12.2012
	Language:	EN
	[2012/50]
	Type:	A1 Application with search report
	No.:	EP2718965
	Date:	16.04.2014
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 13.12.2012 takes the place of the publication of the European patent application.
	[2014/16]
Search report(s)	International search report - published on:	US	13.12.2012
	(Supplementary) European search report - dispatched on:	EP	10.10.2014
Classification	IPC:	H01L21/336, H01L21/265	[2014/46]
	CPC:	H01L21/823418 (EP,US); H01L29/66477 (US); H01L21/2652 (EP,US); H01L21/2658 (EP,US); H01L21/84 (EP,US); H01L29/66772 (EP,US); (+) H01L21/26586 (EP,US); H01L29/66545 (EP,US); H01L29/66628 (EP,US) (-)
	Former IPC [2014/16]	H01L21/336
Designated contracting states	AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2014/16]
Title	German:	VERFAHREN ZUR HERSTELLUNG EINES FELDEFFEKTTRANSISTORS MIT IMPLANTATION DURCH DIE ABSTANDSHALTER	[2014/16]
	English:	METHOD FOR PRODUCING A FIELD EFFECT TRANSISTOR WITH IMPLANTATION THROUGH THE SPACERS	[2014/16]
	French:	PROCÉDÉ DE FABRICATION D'UN TRANSISTOR À EFFET DE CHAMP COMPORTANT UNE IMPLANTATION À TRAVERS LES ESPACEURS	[2014/16]
Entry into regional phase	04.12.2013	National basic fee paid
	04.12.2013	Search fee paid
	04.12.2013	Designation fee(s) paid
	04.12.2013	Examination fee paid
Examination procedure	04.12.2013	Amendment by applicant (claims and/or description)
	04.12.2013	Examination requested [2014/16]
	18.06.2015	Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time
Fees paid	Renewal fee
	04.12.2013	Renewal fee patent year 03
	31.03.2014	Renewal fee patent year 04
	Penalty fee
	Additional fee for renewal fee
	30.06.2015	05 M06 Not yet paid
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[A]US5960322 (XIANG QI [US], et al) [A] 1 * figures 3-6 *;
		[A]WO0122487 (KONINKL PHILIPS ELECTRONICS NV [NL], et al) [A] 1* page 10, line 27 - page 11, line 7 *;
		[XY]US6391733 (FISHER PHILIP A [US]) [X] 1 * column 2, line 44 - line 48 * * column 1, lines 20-23 * * column 4, line 54 - column 5, line 18 * * column 5, line 19 - line 34 * [Y] 2-6;
		[A]EP1294026 (SHARP KK [JP]) [A] 1 * figure 1 *;
		[Y]US2005255660 (LIN CHUN TE [TW], et al) [Y] 3 * abstract * * paragraphs [0019] - [0022] *;
		[Y] - SATO Y ET AL, "Influence of Doping Gradient near a Channel End on Parasitic Series Resistance of Thin-Film Fully-Depleted Metal-Oxide-Semiconductor Field-Effect Transistors", JAPANESE JOURNAL OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, JP, (20041001), vol. 43, no. 10, doi:10.1143/JJAP.43.6948, ISSN 0021-4922, pages 6948 - 6956, XP001516447 [Y] 2,4 * page 6951, column r - page 6952, column r; figure 12 * DOI: http://dx.doi.org/10.1143/JJAP.43.6948
		[Y] - FENOUILLET-BERANGER C ET AL, "Impact of a 10nm ultra-thin BOX (UTBOX) and ground plane on FDSOI devices for 32nm node and below", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 54, no. 9, ISSN 0038-1101, (20100901), pages 849 - 854, (20100608), XP027114250 [Y] 5,6 * figures 1,2 *
	International search	[Y]US4829356 (ARNDT JUERGEN [DE]);
		[Y]US5441899 (NAKAI TETSUYA [JP], et al);
		[Y]US2005009348 (GHYSELEN BRUNO [FR], et al);
		[Y]US7144786 (VAN BENTUM RALF [DE], et al)

The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.

Legal notice
Terms of use
24.2.25; 34p