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EP2482308
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EP About this file: EP2482308
| EP2482308 - Semiconductor device and manufacturing method thereof [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 24.05.2019 Database last updated on 09.09.2024 | |
| Former | Examination is in progress Status updated on 18.01.2019 | Most recent event Tooltip | 24.05.2019 | Withdrawal of application | published on 26.06.2019 [2019/26] | Applicant(s) | For all designated states Renesas Electronics Corporation 2-24, Toyosu 3-chome Koutou-ku Tokyo 135-0061 / JP | [2015/45] |
| Former [2012/31] | For all designated states Renesas Electronics Corporation 1753 Shimonumabe, Nakahara-ku Kawasaki-shi, Kanagawa / JP | Inventor(s) | 01 /
Machida, Nobuo c/o Renesas Electronics Corporation 1753, Shimonumabe Nakahara-ku Kawasaki-shi Kanagawa, 211-8668 / JP | 02 /
Arai, Koichi c/o Renesas Electronics Corporation 1753, Shimonumabe Nakahara-ku Kawasaki-shi Kanagawa, 211-8668 / JP | [2012/31] | Representative(s) | Betten & Resch Patent- und Rechtsanwälte PartGmbB Maximiliansplatz 14 80333 München / DE | [N/P] |
| Former [2012/31] | Calderbank, Thomas Roger, et al Mewburn Ellis LLP 33 Gutter Lane London EC2V 8AS / GB | Application number, filing date | 12150166.2 | 04.01.2012 | [2012/31] | Priority number, date | JP20110017595 | 31.01.2011 Original published format: JP 2011017595 | [2012/31] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP2482308 | Date: | 01.08.2012 | Language: | EN | [2012/31] | Type: | A3 Search report | No.: | EP2482308 | Date: | 07.01.2015 | Language: | EN | [2015/02] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 05.12.2014 | Classification | IPC: | H01L21/336, H01L29/78, H01L29/16 | [2012/31] | CPC: |
H01L29/7802 (EP,KR,US);
H01L29/66068 (EP,KR,US);
H01L29/045 (EP,KR,US);
H01L29/0657 (EP,KR,US);
H01L29/0696 (EP,KR,US);
H01L29/1608 (EP,KR,US)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2015/27] |
| Former [2012/31] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Title | German: | Halbleiterbauelement und Herstellungsverfahren dafür | [2012/31] | English: | Semiconductor device and manufacturing method thereof | [2012/31] | French: | Dispositif de semi-conducteurs et son procédé de fabrication | [2012/31] | Examination procedure | 21.05.2015 | Amendment by applicant (claims and/or description) | 21.05.2015 | Examination requested [2015/27] | 22.01.2019 | Despatch of a communication from the examining division (Time limit: M04) | 21.05.2019 | Application withdrawn by applicant [2019/26] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 22.01.2019 | Fees paid | Renewal fee | 24.01.2014 | Renewal fee patent year 03 | 26.01.2015 | Renewal fee patent year 04 | 25.01.2016 | Renewal fee patent year 05 | 23.01.2017 | Renewal fee patent year 06 | 25.01.2018 | Renewal fee patent year 07 | 16.01.2019 | Renewal fee patent year 08 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XYI]US5814859 (GHEZZO MARIO [US], et al) [X] 1-4,12-14,16-20 * column 3, line 1 - column 7, line 25; figures 1-18 * [Y] 15 [I] 11; | [XI]EP1742271 (ST MICROELECTRONICS SRL [IT]) [X] 1-4,12,13,16-20 * paragraph [0003] - paragraph [0020]; figure 1 * * paragraph [0069] - paragraph [0097]; figures 15-21 * [I] 11; | [XI]EP1742249 (ST MICROELECTRONICS SRL [IT]) [X] 1-4,12,13,16-20 * paragraph [0038] - paragraph [0074]; figures 5-14 * [I] 11; | [A]WO9900833 (HARRIS CORP [US]) [A] 1-20 * the whole document *; | [A]JP2009049363 (MITSUBISHI ELECTRIC CORP) [A] 5,10 * abstract * * paragraph [0022]; figures 1-8 * | [Y] - LICHTENWALNER DANIEL ET AL, "High-mobility enhancement-mode 4H-SiC lateral field-effect transistors utilizing atomic layer deposited Al2O3 gate dielectric", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS, US, (20091016), vol. 95, no. 15, doi:10.1063/1.3251076, ISSN 0003-6951, pages 152113 - 152113, XP012126068 [Y] 15 * the whole document * DOI: http://dx.doi.org/10.1063/1.3251076 | by applicant | JP2011017595 | JP2008108869 | JP2008147576 | US2010035420 |