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Extract from the Register of European Patents

EP About this file: EP2639833

EP2639833 - Method of making a high-voltage field-effect transistor [Right-click to bookmark this link]
Former [2013/38]High-voltage field-effect transistor and method of making the same
[2019/46]
StatusNo opposition filed within time limit
Status updated on  05.03.2021
Database last updated on 09.09.2024
FormerThe patent has been granted
Status updated on  27.03.2020
FormerGrant of patent is intended
Status updated on  17.11.2019
FormerExamination is in progress
Status updated on  04.05.2018
Most recent event   Tooltip06.09.2024Lapse of the patent in a contracting state
New state(s): MT		published on 09.10.2024 [2024/41]
Applicant(s)For all designated states
ams AG
Schloss Premstätten
Tobelbader Str. 30
8141 Premstätten / AT
[2020/16]
Former [2013/38]For all designated states
austriamicrosystems AG
Schloss Premstätten
8141 Unterpremstätten / AT
Inventor(s)01 / Knaipp, Martin
c/o ams AG
Schloss Premstätten
Tobelbader Str. 30
8141 Premstätten / AT
 [2020/18]
Former [2013/38]01 / Knaipp, Martin
Schwarzer Weg 49
8141 Unterpremstätten / AT
Representative(s)Epping - Hermann - Fischer
Patentanwaltsgesellschaft mbH
Schloßschmidstraße 5
80639 München / DE
[2020/18]
Former [2013/38]Epping - Hermann - Fischer
Patentanwaltsgesellschaft mbH Ridlerstrasse 55
80339 München / DE
Application number, filing date12159949.216.03.2012
[2013/38]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report 
No.:EP2639833
Date:18.09.2013
Language:EN
[2013/38]
Type: B1 Patent specification 
No.:EP2639833
Date:29.04.2020
Language:EN
[2020/18]
Search report(s)(Supplementary) European search report - dispatched on:EP12.09.2012
ClassificationIPC:H01L29/78, H01L29/08, H01L29/06, H01L21/336
[2013/38]
CPC:
H01L29/66659 (EP,CN,US); H01L21/26513 (US); H01L21/266 (US);
H01L29/0634 (EP,CN,US); H01L29/0649 (US); H01L29/0653 (EP,CN,US);
H01L29/0865 (US); H01L29/0882 (US); H01L29/1095 (US);
H01L29/66681 (EP,CN,US); H01L29/7816 (EP,CN,US); H01L29/7823 (US);
H01L29/7835 (EP,CN,US) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2020/18]
Former [2013/38]AL,  AT,  BE,  BG,  CH,  CY,  CZ,  DE,  DK,  EE,  ES,  FI,  FR,  GB,  GR,  HR,  HU,  IE,  IS,  IT,  LI,  LT,  LU,  LV,  MC,  MK,  MT,  NL,  NO,  PL,  PT,  RO,  RS,  SE,  SI,  SK,  SM,  TR 
TitleGerman:Verfahren zur Herstellung eines Hochspannungsfeldeffekttransistors[2019/46]
English:Method of making a high-voltage field-effect transistor[2019/46]
French:Méthode de fabrication d'un transistor haute tension à effet de champ[2019/46]
Former [2013/38]Hochspannungsfeldeffekttransistor und Verfahren zu dessen Herstellung
Former [2013/38]High-voltage field-effect transistor and method of making the same
Former [2013/38]Transistor haute tension à effet de champ et sa méthode de fabrication
Examination procedure13.01.2014Amendment by applicant (claims and/or description)
13.01.2014Examination requested  [2014/09]
04.05.2018Despatch of a communication from the examining division (Time limit: M04)
31.08.2018Reply to a communication from the examining division
18.11.2019Communication of intention to grant the patent
10.03.2020Fee for grant paid
10.03.2020Fee for publishing/printing paid
10.03.2020Receipt of the translation of the claim(s)
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  04.05.2018
Opposition(s)01.02.2021No opposition filed within time limit [2021/14]
Fees paidRenewal fee
26.03.2014Renewal fee patent year 03
24.03.2015Renewal fee patent year 04
22.03.2016Renewal fee patent year 05
21.03.2017Renewal fee patent year 06
21.03.2018Renewal fee patent year 07
20.03.2019Renewal fee patent year 08
24.03.2020Renewal fee patent year 09
Opt-out from the exclusive  Tooltip
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Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU16.03.2012
AL29.04.2020
AT29.04.2020
CY29.04.2020
CZ29.04.2020
DK29.04.2020
EE29.04.2020
ES29.04.2020
FI29.04.2020
HR29.04.2020
IT29.04.2020
LT29.04.2020
LV29.04.2020
MC29.04.2020
MK29.04.2020
MT29.04.2020
NL29.04.2020
PL29.04.2020
RO29.04.2020
RS29.04.2020
SE29.04.2020
SI29.04.2020
SK29.04.2020
SM29.04.2020
TR29.04.2020
BG29.07.2020
NO29.07.2020
GR30.07.2020
IS29.08.2020
PT31.08.2020
[2024/41]
Former [2024/29]HU16.03.2012
AL29.04.2020
AT29.04.2020
CY29.04.2020
CZ29.04.2020
DK29.04.2020
EE29.04.2020
ES29.04.2020
FI29.04.2020
HR29.04.2020
IT29.04.2020
LT29.04.2020
LV29.04.2020
MC29.04.2020
MK29.04.2020
NL29.04.2020
PL29.04.2020
RO29.04.2020
RS29.04.2020
SE29.04.2020
SI29.04.2020
SK29.04.2020
SM29.04.2020
TR29.04.2020
BG29.07.2020
NO29.07.2020
GR30.07.2020
IS29.08.2020
PT31.08.2020
Former [2024/22]HU16.03.2012
AL29.04.2020
AT29.04.2020
CY29.04.2020
CZ29.04.2020
DK29.04.2020
EE29.04.2020
ES29.04.2020
FI29.04.2020
HR29.04.2020
IT29.04.2020
LT29.04.2020
LV29.04.2020
MC29.04.2020
MK29.04.2020
NL29.04.2020
PL29.04.2020
RO29.04.2020
RS29.04.2020
SE29.04.2020
SI29.04.2020
SK29.04.2020
SM29.04.2020
BG29.07.2020
NO29.07.2020
GR30.07.2020
IS29.08.2020
PT31.08.2020
Former [2023/27]HU16.03.2012
AL29.04.2020
AT29.04.2020
CY29.04.2020
CZ29.04.2020
DK29.04.2020
EE29.04.2020
ES29.04.2020
FI29.04.2020
HR29.04.2020
IT29.04.2020
LT29.04.2020
LV29.04.2020
MC29.04.2020
NL29.04.2020
PL29.04.2020
RO29.04.2020
RS29.04.2020
SE29.04.2020
SI29.04.2020
SK29.04.2020
SM29.04.2020
BG29.07.2020
NO29.07.2020
GR30.07.2020
IS29.08.2020
PT31.08.2020
Former [2023/24]AL29.04.2020
AT29.04.2020
CY29.04.2020
CZ29.04.2020
DK29.04.2020
EE29.04.2020
ES29.04.2020
FI29.04.2020
HR29.04.2020
IT29.04.2020
LT29.04.2020
LV29.04.2020
MC29.04.2020
NL29.04.2020
PL29.04.2020
RO29.04.2020
RS29.04.2020
SE29.04.2020
SI29.04.2020
SK29.04.2020
SM29.04.2020
BG29.07.2020
NO29.07.2020
GR30.07.2020
IS29.08.2020
PT31.08.2020
Former [2021/45]AL29.04.2020
AT29.04.2020
CZ29.04.2020
DK29.04.2020
EE29.04.2020
ES29.04.2020
FI29.04.2020
HR29.04.2020
IT29.04.2020
LT29.04.2020
LV29.04.2020
MC29.04.2020
NL29.04.2020
PL29.04.2020
RO29.04.2020
RS29.04.2020
SE29.04.2020
SI29.04.2020
SK29.04.2020
SM29.04.2020
BG29.07.2020
NO29.07.2020
GR30.07.2020
IS29.08.2020
PT31.08.2020
Former [2021/24]AL29.04.2020
AT29.04.2020
CZ29.04.2020
DK29.04.2020
EE29.04.2020
ES29.04.2020
FI29.04.2020
HR29.04.2020
IT29.04.2020
LT29.04.2020
LV29.04.2020
NL29.04.2020
PL29.04.2020
RO29.04.2020
RS29.04.2020
SE29.04.2020
SI29.04.2020
SK29.04.2020
SM29.04.2020
BG29.07.2020
NO29.07.2020
GR30.07.2020
IS29.08.2020
PT31.08.2020
Former [2021/10]AL29.04.2020
AT29.04.2020
CZ29.04.2020
DK29.04.2020
EE29.04.2020
ES29.04.2020
FI29.04.2020
HR29.04.2020
IT29.04.2020
LT29.04.2020
LV29.04.2020
NL29.04.2020
PL29.04.2020
RO29.04.2020
RS29.04.2020
SE29.04.2020
SK29.04.2020
SM29.04.2020
BG29.07.2020
NO29.07.2020
GR30.07.2020
IS29.08.2020
PT31.08.2020
Former [2021/09]AL29.04.2020
AT29.04.2020
CZ29.04.2020
DK29.04.2020
EE29.04.2020
ES29.04.2020
FI29.04.2020
HR29.04.2020
IT29.04.2020
LT29.04.2020
LV29.04.2020
NL29.04.2020
RO29.04.2020
RS29.04.2020
SE29.04.2020
SM29.04.2020
BG29.07.2020
NO29.07.2020
GR30.07.2020
IS29.08.2020
PT31.08.2020
Former [2021/08]AL29.04.2020
DK29.04.2020
ES29.04.2020
FI29.04.2020
HR29.04.2020
LT29.04.2020
LV29.04.2020
NL29.04.2020
RO29.04.2020
RS29.04.2020
SE29.04.2020
SM29.04.2020
BG29.07.2020
NO29.07.2020
GR30.07.2020
IS29.08.2020
PT31.08.2020
Former [2021/04]AL29.04.2020
FI29.04.2020
HR29.04.2020
LT29.04.2020
LV29.04.2020
NL29.04.2020
RS29.04.2020
SE29.04.2020
BG29.07.2020
NO29.07.2020
GR30.07.2020
IS29.08.2020
PT31.08.2020
Former [2021/01]FI29.04.2020
HR29.04.2020
LT29.04.2020
LV29.04.2020
RS29.04.2020
SE29.04.2020
BG29.07.2020
NO29.07.2020
GR30.07.2020
IS29.08.2020
PT31.08.2020
Former [2020/51]FI29.04.2020
HR29.04.2020
LT29.04.2020
LV29.04.2020
RS29.04.2020
SE29.04.2020
NO29.07.2020
GR30.07.2020
IS29.08.2020
PT31.08.2020
Former [2020/50]FI29.04.2020
HR29.04.2020
LT29.04.2020
LV29.04.2020
SE29.04.2020
NO29.07.2020
GR30.07.2020
IS29.08.2020
PT31.08.2020
Former [2020/48]FI29.04.2020
LT29.04.2020
SE29.04.2020
NO29.07.2020
IS29.08.2020
PT31.08.2020
Former [2020/47]LT29.04.2020
NO29.07.2020
IS29.08.2020
Former [2020/46]IS29.08.2020
Documents cited:Search[A]DE4309764  (SIEMENS AG [DE]) [A] 2,7,9,11,12,15 * column 3, line 8 - line 40; figures 5-7 *;
 [A]GB2380056  (FUJI ELECTRIC CO LTD [JP]) [A] 2,7,9,11,15 * page 15, line 18 - page 16, line 9; figures 11-13 * * page 14, line 27 - page 15, line 16 *;
 [XI]US2003132450  (MINATO TADAHARU [JP], et al) [X] 1,8 * paragraph [0594] - paragraph [0600]; figures 146-147 * [I] 2-7,9-15;
 [A]  - HERINGA A ET AL, "Novel power transistor design for a process independent high voltage option in standard CMOS", PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS; 4-8 JUNE 2006; NAPLES, IT, IEEE OPERATIONS CENTER, PISCATAWAY, NJ, USA, (20060604), doi:10.1109/ISPSD.2006.1666137, ISBN 978-0-7803-9714-9, pages 1 - 4, XP010933525 [A] 3 * figures 3,4(b) *

DOI:   http://dx.doi.org/10.1109/ISPSD.2006.1666137
by applicantWO2009050669
 US2010213517
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.