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Extract from the Register of European Patents

EP About this file: EP2482321

EP2482321 - Method of fabricating a deep trench insulated gate bipolar transistor [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  15.08.2014
Database last updated on 05.10.2024
Most recent event   Tooltip15.08.2014Application deemed to be withdrawnpublished on 17.09.2014  [2014/38]
Applicant(s)For all designated states
Power Integrations, Inc.
5245 Hellyer Avenue
San Jose, California 95138 / US
[2012/31]
Inventor(s)01 / Parthasarathy, Vijay
1055 Bonita Avenue
Mountain View, CA 94040 / US
02 / Banerjee, Sujit
1901 Huxley Court
San Jose, CA 95125 / US
 [2012/31]
Representative(s)Peterreins, Frank
Fish & Richardson P.C.
Highlight Business Towers
Mies-van-der-Rohe-Strasse 8
80807 München / DE
[N/P]
Former [2012/31]Peterreins, Frank
Fish & Richardson P.C. Highlight Towers Mies-van-der-Rohe-Straße 8
80807 München / DE
Application number, filing date12164827.318.12.2009
[2012/31]
Priority number, dateUS2008031729720.12.2008         Original published format: US 317297
[2012/31]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP2482321
Date:01.08.2012
Language:EN
[2012/31]
Type: A3 Search report 
No.:EP2482321
Date:04.12.2013
Language:EN
[2013/49]
Search report(s)(Supplementary) European search report - dispatched on:EP06.11.2013
ClassificationIPC:H01L29/739, H01L21/331
[2013/49]
CPC:
H01L29/7397 (EP,US); H01L29/66333 (EP,US)
Former IPC [2012/31]H01L29/739, H01L21/331, H01L29/66
Designated contracting statesAT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   SE,   SI,   SK,   SM,   TR [2012/31]
TitleGerman:Verfahren zur Herstellung eines bipolaren Transistors mit tiefgrabenisoliertem Gate[2012/31]
English:Method of fabricating a deep trench insulated gate bipolar transistor[2012/31]
French:Procédé de fabrication de transistor bipolaire à porte à isolation en tranches profondes[2012/31]
Examination procedure19.04.2012Examination requested  [2012/31]
25.11.2013Despatch of a communication from the examining division (Time limit: M04)
08.04.2014Application deemed to be withdrawn, date of legal effect  [2014/38]
07.05.2014Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2014/38]
Parent application(s)   TooltipEP09179794.4  / EP2200088
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued (EP20090179794) is  23.04.2010
Fees paidRenewal fee
19.04.2012Renewal fee patent year 03
26.12.2012Renewal fee patent year 04
27.12.2013Renewal fee patent year 05
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:Search[IY]EP0494597  (TOSHIBA KK [JP]) [I] 1-8,11-15 * column 4, lines 33-55; figure 6 * * column 2, line 42 - column 3, line 41 * [Y] 9,10;
 [Y]EP1909331  (POWER INTEGRATIONS INC [US]) [Y] 9,10 * figures 1D-1G *;
 [A]US2005263852  (OGURA TSUNEO [JP], et al) [A] 1-15 * the whole document *;
 [A]US2003136974  (YEDINAK JOSEPH A [US], et al) [A] 1-15 * the whole document *;
 [A]US2003209781  (HATTORI HIDETAKA [JP]) [A] 1-15 * the whole document *;
 [A]US6362505  (TIHANYI JENOE [DE]) [A] 1 * figure 1 *;
 [A]EP1959499  (POWER INTEGRATIONS INC [US]) [A] 1 * figure 1 *;
 [A]JP2008153389  (TOYOTA MOTOR CORP) [A] 1 * paragraphs [0004] , [0011] , [0031]; figure 14 *;
 [A]  - YAMADA J ET AL, "Low turn-off switching energy 1200 V IGBT module", CONFERENCE RECORD OF THE 2002 IEEE INDUSTRY APPLICATIONS CONFERENCE : 37TH IAS ANNUAL MEETING ; 13 - 18 OCTOBER 2002, PITTSBURGH, PENNSYLVANIA, USA; [CONFERENCE RECORD OF THE IEEE INDUSTRY APPLICATIONS CONFERENCE. IAS ANNUAL MEETING], IEEE SERVICE CE, (20021013), doi:10.1109/IAS.2002.1043831, ISBN 978-0-7803-7420-1, page 2165, XP032143387 [A] 1 * Section III;; figures 3a,3b,4 *

DOI:   http://dx.doi.org/10.1109/IAS.2002.1043831
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.