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Extract from the Register of European Patents

EP About this file: EP2695186

EP2695186 - HETEROGENEOUS INTEGRATION OF GROUP III-V OR II-VI MATERIALS WITH SILICON OR GERMANIUM [Right-click to bookmark this link]
StatusThe application has been refused
Status updated on  29.05.2018
Database last updated on 14.09.2024
FormerExamination is in progress
Status updated on  02.11.2016
Most recent event   Tooltip26.10.2018Refusal of applicationpublished on 28.11.2018  [2018/48]
Applicant(s)For all designated states
Oxford University Innovation Limited
Buxton Court
3 West Way
Botley
Oxford OX2 0JB / GB
[2017/10]
Former [2016/32]For all designated states
Oxford University Innovation Limited
Buxton Court
3 West Way
Botley
Oxford OX2 0SZ / GB
Former [2014/07]For all designated states
Isis Innovation Limited
Ewert House Ewert Place
Summertown, Oxford OX2 7SQ / GB
Inventor(s)01 / WILSHAW, Peter
Department of Materials
University of Oxford
Parks Road
Oxford, Oxfordshire OX1 3PH / GB
02 / MALLIK, Kanad
Department of Materials
University of Oxford
Parks Road
Oxford, Oxfordshire OX1 3PH / GB
03 / JORDAN, Doug
22 Widford Road
Chelmsford, Essex CM2 9AR / GB
04 / DE GROOT, Cornelis
School of Electronics and Computer Science
University of Southampton
Southampton SO17 1BJ / GB
 [2014/07]
Representative(s)J A Kemp LLP
80 Turnmill Street
London EC1M 5QU / GB
[N/P]
Former [2014/07]Forsythe, Dominic
J A Kemp
14 South Square
Gray's Inn
London WC1R 5JJ / GB
Application number, filing date12718735.904.04.2012
WO2012GB50758
Priority number, dateGB2011000586206.04.2011         Original published format: GB 201105862
GB2011000585906.04.2011         Original published format: GB 201105859
GB2011000585706.04.2011         Original published format: GB 201105857
[2014/07]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2012136998
Date:11.10.2012
Language:EN
[2012/41]
Type: A1 Application with search report 
No.:EP2695186
Date:12.02.2014
Language:EN
The application published by WIPO in one of the EPO official languages on 11.10.2012 takes the place of the publication of the European patent application.
[2014/07]
Search report(s)International search report - published on:EP11.10.2012
ClassificationIPC:H01L21/26, H01L21/265
[2014/07]
CPC:
H01L21/2605 (EP,US); H01L21/225 (US); H01L21/02381 (US);
H01L21/22 (US); H01L21/26506 (EP,US); H01L21/3225 (US);
H01L21/3226 (EP,US); H01L21/324 (US); H01L29/16 (US);
H01L29/2003 (US); H01L29/225 (US); H01L29/267 (US);
H01L29/36 (US) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2014/07]
TitleGerman:HETEROGENE INTEGRATION VON GRUPPE-III-V- ODER II-VI-MATERIALIEN MIT SILIZIUM ODER GERMANIUM[2014/07]
English:HETEROGENEOUS INTEGRATION OF GROUP III-V OR II-VI MATERIALS WITH SILICON OR GERMANIUM[2014/07]
French:INTÉGRATION HÉTÉROGÈNE DE MATÉRIAUX DU GROUPE III-V OU II-VI AVEC DU SILICIUM OU DU GERMANIUM[2014/07]
Entry into regional phase21.10.2013National basic fee paid 
21.10.2013Designation fee(s) paid 
21.10.2013Examination fee paid 
Examination procedure21.10.2013Examination requested  [2014/07]
06.06.2014Amendment by applicant (claims and/or description)
30.01.2015Despatch of a communication from the examining division (Time limit: M06)
07.09.2015Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time
13.11.2015Reply to a communication from the examining division
22.06.2016Despatch of a communication from the examining division (Time limit: M06)
30.12.2016Reply to a communication from the examining division
14.05.2018Cancellation of oral proceeding that was planned for 15.05.2018
15.05.2018Date of oral proceedings (cancelled)
30.05.2018Despatch of communication that the application is refused, reason: substantive examination [2018/48]
02.10.2018Application refused, date of legal effect [2018/48]
Appeal following examination17.07.2018Appeal received No.  T2543/18
02.10.2018Result of appeal procedure: appeal of the applicant withdrawn
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  30.01.2015
Request for further processing for:The application is deemed to be withdrawn due to failure to reply to the examination report
13.11.2015Request for further processing filed
13.11.2015Full payment received (date of receipt of payment)
Request granted
25.11.2015Decision despatched
Fees paidRenewal fee
29.04.2014Renewal fee patent year 03
29.10.2015Renewal fee patent year 04
27.04.2016Renewal fee patent year 05
27.04.2017Renewal fee patent year 06
Penalty fee
Additional fee for renewal fee
30.04.201504   M06   Fee paid on   29.10.2015
30.04.201807   M06   Not yet paid
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Cited inInternational search[Y]  - YU B BOLKHOVITYANOV, "GaAs epitaxy on Si substrates: modern status of research and engineering", PHYSICS - USPEKHI, (20080101), vol. 51, no. 5, doi:10.1070/PU2008v051n05ABEH006529, pages 437 - 456, XP055029663 [Y] 1-21 * abstract *

DOI:   http://dx.doi.org/10.1070/PU2008v051n05ABEH006529
 [Y]  - ABUELGASIM A ET AL, "FAST TRACK COMMUNICATION;Reduced microwave attenuation in coplanar waveguides using deep level impurity compensated Czochralski-silicon substrates;Fast Track Communication", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, IOP PUBLISHING LTD, GB, (20110331), vol. 26, no. 7, doi:10.1088/0268-1242/26/7/072001, ISSN 0268-1242, page 72001, XP020206519 [Y] 1-21 * figures 1,2 *

DOI:   http://dx.doi.org/10.1088/0268-1242/26/7/072001
 [A]  - WANG R ET AL, "Semi-insulating silicon substrates for silicon based RF integrated circuits", SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS, 1998. DIGEST OF PAPERS. 1998 TOPICAL MEETING ON ANN ARBOR, MI, USA 17-18 SEPT. 1998, PISCATAWAY, NJ, USA,IEEE, US, (19980917), doi:10.1109/SMIC.1998.750213, ISBN 978-0-7803-5288-9, pages 164 - 168, XP010324584 [A] 1-21 * the whole document *

DOI:   http://dx.doi.org/10.1109/SMIC.1998.750213
ExaminationUS2007278574
 WO2009034362
by applicantWO2009034362
    - SEMICOND. SCI. TECHNOL., (2003), vol. 18, pages 517 - 524
    - K. MALLIK; R.J. FALSTER; P.R. WILSHAW, SEMICONDUCTOR SCIENCE TECHNOLOGY, (2003), vol. 18, page 517
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.