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Extract from the Register of European Patents

EP About this file: EP2579312

EP2579312 - Solid state imaging device and manufacturing method thereof [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  26.12.2014
Database last updated on 19.10.2024
Most recent event   Tooltip26.12.2014Application deemed to be withdrawnpublished on 28.01.2015  [2015/05]
Applicant(s)For all designated states
Fujifilm Corporation
26-30, Nishiazabu 2-chome
Minato-ku
Tokyo 106-8620 / JP
[N/P]
Former [2013/15]For all designated states
Fujifilm Corporation
26-30, Nishiazabu 2-chome Minato-ku
Tokyo 106-8620 / JP
Inventor(s)01 / Nishida, Kazuhiro
c/o Fujifilm Dimatix, Inc.
2250 Martin Avenue
Santa Clara, CA 95050 / US
02 / Shimamura, Hitoshi
c/o Fujifilm Corporation
324, Uetake-cho 1-chome
Kita-ku, Saitama-shi
Saitama / JP
03 / Takasaki, Kosuke
c/o Fujifilm Corporation
210, Nakanuma
Minami-ashigara-shi
Kanagawa / JP
 [2013/15]
Representative(s)Klunker . Schmitt-Nilson . Hirsch
Patentanwälte
Destouchesstraße 68
80796 München / DE
[N/P]
Former [2013/15]Klunker . Schmitt-Nilson . Hirsch
Patentanwälte Destouchesstrasse 68
80796 München / DE
Application number, filing date13150059.724.03.2006
[2013/15]
Priority number, dateJP2005008796825.03.2005         Original published format: JP 2005087968
[2013/15]
Filing languageEN
Procedural languageEN
PublicationType: A2 Application without search report 
No.:EP2579312
Date:10.04.2013
Language:EN
[2013/15]
Type: A3 Search report 
No.:EP2579312
Date:29.05.2013
Language:EN
[2013/22]
Search report(s)(Supplementary) European search report - dispatched on:EP03.05.2013
ClassificationIPC:H01L27/146, H01L23/10, H01L21/683, H01L27/148
[2013/22]
CPC:
H01L21/6835 (EP,US); H01L24/97 (EP,US); H01L27/14618 (EP,US);
H01L27/14683 (EP,US); H01L21/561 (EP,US); H01L21/566 (EP,US);
H01L2223/54433 (EP,US); H01L2223/54486 (EP,US); H01L2224/32225 (EP,US);
H01L2224/48227 (EP,US); H01L2224/48247 (EP,US); H01L2224/48465 (EP,US);
H01L2224/73265 (EP,US); H01L2224/8501 (EP,US); H01L2224/85013 (EP,US);
H01L2224/97 (EP,US); H01L23/3121 (EP,US); H01L23/544 (EP,US);
H01L25/0657 (EP,US); H01L27/14621 (EP,US); H01L27/14627 (EP,US);
H01L27/14643 (EP,US); H01L27/14685 (EP,US); H01L27/148 (EP,US);
H01L2924/01046 (EP,US); H01L2924/01078 (EP,US); H01L2924/01079 (EP,US);
H01L2924/10253 (EP,US); H01L2924/12042 (EP,US); H01L2924/15183 (EP,US);
H01L2924/15311 (EP,US); H01L2924/15788 (EP,US); H01L2924/16195 (EP,US);
H01L2924/16235 (EP,US); H01L2924/181 (EP,US); H01L2924/1815 (EP,US);
H01L2924/351 (EP,US) (-)
C-Set:
H01L2224/48465, H01L2224/48227 (US,EP);
H01L2224/48465, H01L2224/48227, H01L2924/00 (US,EP);
H01L2224/48465, H01L2224/48247, H01L2924/00 (US,EP);
H01L2224/73265, H01L2224/32225, H01L2224/48227, H01L2924/00 (US,EP);
H01L2224/97, H01L2224/73265, H01L2224/32225, H01L2224/48227, H01L2924/00 (EP,US);
H01L2224/97, H01L2224/85 (EP,US);
H01L2924/10253, H01L2924/00 (EP,US);
H01L2924/12042, H01L2924/00 (US,EP);
H01L2924/15311, H01L2224/73265, H01L2224/32225, H01L2224/48227, H01L2924/00 (EP,US);
H01L2924/15788, H01L2924/00 (US,EP);
H01L2924/181, H01L2924/00012 (US,EP);
H01L2924/351, H01L2924/00 (EP,US)
(-)
Former IPC [2013/15]H01L27/146, H01L23/10, H01L21/683
Designated contracting statesDE,   FR,   GB [2013/15]
TitleGerman:Halbleiter-Bildgebungsbauelement und Herstellungsverfahren dafür[2013/15]
English:Solid state imaging device and manufacturing method thereof[2013/15]
French:Dispositif d'imagerie à semi-conducteurs et son procédé de fabrication[2013/15]
Examination procedure15.11.2013Amendment by applicant (claims and/or description)
15.11.2013Examination requested  [2013/52]
12.05.2014Despatch of a communication from the examining division (Time limit: M03)
23.08.2014Application deemed to be withdrawn, date of legal effect  [2015/05]
22.09.2014Despatch of communication that the application is deemed to be withdrawn, reason: reply to the communication from the examining division not received in time  [2015/05]
Parent application(s)   TooltipEP06730719.9  / EP1861879
Fees paidRenewal fee
02.01.2013Renewal fee patent year 03
02.01.2013Renewal fee patent year 04
02.01.2013Renewal fee patent year 05
02.01.2013Renewal fee patent year 06
02.01.2013Renewal fee patent year 07
27.03.2013Renewal fee patent year 08
27.03.2014Renewal fee patent year 09
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Documents cited:Search[A]US6358629  (AGA FUMIAKI [JP]);
 [A]US2002195696  (YONEDA YOSHIHIRO [JP]);
 [Y]JP2003154551  (SONY CORP);
 [XI]US2003222333  (BOLKEN TODD O [US], et al);
 [A]US2004051168  (ARAI YOSHIYUKI [JP], et al);
 [XYI]EP1445803  (SHARP KK [JP]);
 [Y]WO2004090033  (HITACHI CHEMICAL CO LTD [JP], et al);
 [A]JP2004296584  (SONY CORP);
 [XYI]JP2004363400  (SANYO ELECTRIC CO, et al);
 US2006214153  [ ] (IKEZAWA RYOICHI [JP], et al)
by applicantJP2001257334
 US6777767
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.