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EP2615642
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EP About this file: EP2615642
| EP2615642 - Trench-gate MISFET [Right-click to bookmark this link] | Status | The application has been refused Status updated on 09.08.2019 Database last updated on 11.04.2026 | Most recent event Tooltip | 09.08.2019 | Refusal of application | published on 11.09.2019 [2019/37] | Applicant(s) | For all designated states Cree, Inc. 4600 Silicon Drive Durham, NC 27703 / US | [N/P] |
| Former [2013/29] | For all designated states Cree, Inc. 4600 Silicon Drive Durham, NC 27703 / US | Inventor(s) | 01 /
Zhang, Qingchun 108 Hickorywood Boulevard Cary, NC 27519 / US | 02 /
Agarwal, Anant 208 Black Tie Lane Chapel Hill, NC 27514 / US | 03 /
Jonas, Charlotte 209 Berlin Way Morrisville, NC 27560 / US | [2013/29] | Representative(s) | FRKelly Waterways House Grand Canal Quay Dublin D02 PD39 / IE | [N/P] |
| Former [2013/38] | Brophy, David Timothy, et al FRKelly 27 Clyde Road Ballsbridge Dublin 4 / IE | ||
| Former [2013/29] | Boyce, Conor FRKelly 27 Clyde Road Ballsbridge Dublin 4 / IE | Application number, filing date | 13161683.1 | 05.12.2008 | [2013/29] | Priority number, date | US20070952447 | 07.12.2007 Original published format: US 952447 | [2013/29] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP2615642 | Date: | 17.07.2013 | Language: | EN | [2013/29] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 13.06.2013 | Classification | IPC: | H01L29/04, H01L29/06, H01L29/08, H01L29/10, H01L29/78, H01L29/739, H01L29/749, // H01L29/24 | [2013/29] | CPC: |
H10D30/668 (EP,US);
H10D18/40 (EP,US);
H10D30/635 (EP,US);
H10D62/105 (EP,US);
H10D62/151 (EP,US);
H10D62/157 (EP,US);
| Designated contracting states | AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MT, NL, NO, PL, PT, RO, SE, SI, SK, TR [2013/29] | Title | German: | Transistor mit A-Seiten-Leitkanal und Grabenschutzbohrbereich | [2013/29] | English: | Trench-gate MISFET | [2013/29] | French: | Transistor avec canal conducteur de face A et région de puits de protection de tranchée | [2013/29] | Examination procedure | 17.01.2014 | Amendment by applicant (claims and/or description) | 17.01.2014 | Examination requested [2014/10] | 21.02.2014 | Despatch of a communication from the examining division (Time limit: M04) | 17.06.2014 | Reply to a communication from the examining division | 30.06.2016 | Date of oral proceedings | 11.07.2016 | Minutes of oral proceedings despatched | 14.07.2016 | Despatch of communication that the application is refused, reason: substantive examination [2019/37] | 09.07.2019 | Application refused, date of legal effect [2019/37] | Appeal following examination | 08.09.2016 | Appeal received No. T2679/16 | 23.11.2016 | Statement of grounds filed | 09.07.2019 | Result of appeal procedure: appeal of the applicant was rejected | 09.07.2019 | Date of oral proceedings | 16.07.2019 | Minutes of oral proceedings despatched | Parent application(s) Tooltip | EP08170802.6 / EP2068363 | Fees paid | Renewal fee | 29.07.2013 | Renewal fee patent year 03 | 29.07.2013 | Renewal fee patent year 04 | 29.07.2013 | Renewal fee patent year 05 | 12.12.2013 | Renewal fee patent year 06 | 11.12.2014 | Renewal fee patent year 07 | 10.12.2015 | Renewal fee patent year 08 | 13.12.2016 | Renewal fee patent year 09 | 12.12.2017 | Renewal fee patent year 10 | 12.12.2018 | Renewal fee patent year 11 |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [XI] US6057558 (YAMAMOTO TSUYOSHI et al.) | [XI] JP2001267570 (MITSUBISHI ELECTRIC CORP et al.) | [L] EP2068363 (CREE INC et al.) | [AD] YANO; KIMOTO; MATSUNAMI; ASANO; SUGAWARA: "High Channel Mobility in Inversion Layers of 4H-SiC MOSFETs by Utilizing (1120) Face", IEEE ELECTRON DEVICE LETTERS, vol. 20, no. 12, December 1999 (1999-12-01), pages 611 - 613, XP002698013 DOI: http://dx.doi.org/10.1109/55.806101 | [XI] YANO H ET AL: "HIGH CHANNEL MOBILITY IN INVERSION LAYER OF SIC MOSFETS FOR POWER SWITCHING TRANSISTORS", EXTENDED ABSTRACTS OF THE INTERNATIONAL CONFERENCE ON SOLIDSTATE DEVICES AND MATERIALS, JAPAN SOCIETY OF APPLIED PHYSICS. TOKYO, JA, 1 January 1999 (1999-01-01), pages 372/373, XP000935127 [I] 14-17 | by applicant | US5976936 | US2002185679 | ZETTERLING, CARL-MIKAEL: "Process Technology for Silicon Carbide Devices", 2002, INSTITUTE OF ELECTRICAL ENGINEERS, pages: 3 | YANO; KIMOTO; MATSUNAMI; ASANO; SUGAWARA: "High Channel Mobility in Inversion Layers of 4H-SiC MOSFETs by Utilizing (1120) Face", IEEE ELECTRON DEVICE LETTERS, vol. 20, no. 12, December 1999 (1999-12-01), pages 611 - 613, XP011424323, DOI: doi:10.1109/55.806101 DOI: http://dx.doi.org/10.1109/55.806101 |