EP2834625 - DETERMINATION OF THE CONCENTRATION OF INTERSTITIAL OXYGEN IN A SEMICONDUCTOR SAMPLE [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 30.08.2019 Database last updated on 31.08.2024 | |
Former | The patent has been granted Status updated on 21.09.2018 | ||
Former | Grant of patent is intended Status updated on 27.05.2018 | Most recent event Tooltip | 01.07.2022 | Lapse of the patent in a contracting state New state(s): MK | published on 03.08.2022 [2022/31] | Applicant(s) | For all designated states Commissariat à l'Énergie Atomique et aux Énergies Alternatives Bâtiment le Ponant D 25 rue Leblanc 75015 Paris / FR | [2015/07] | Inventor(s) | 01 /
VEIRMAN Jordi c/o Veirman Brigitte 314 rue des Genévriers FR-74330 Poisy / FR | 02 /
DUBOIS Sébastien 40 rue du Bargy FR-74950 Scionzier / FR | 03 /
ENJALBERT Nicolas 30 route de Castres FR-81 100 Burlats / FR | [2015/07] | Representative(s) | Talbot, Alexandre Cabinet Hecké 28 Cours Jean Jaurès 38000 Grenoble / FR | [2018/43] |
Former [2015/07] | Talbot, Alexandre Cabinet Hecké Europole 10, rue d'Arménie - BP 1537 38025 Grenoble Cedex 1 / FR | Application number, filing date | 13722478.8 | 05.04.2013 | [2018/43] | WO2013FR00090 | Priority number, date | FR20120001045 | 06.04.2012 Original published format: FR 1201045 | [2015/07] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | WO2013150194 | Date: | 10.10.2013 | Language: | FR | [2013/41] | Type: | A1 Application with search report | No.: | EP2834625 | Date: | 11.02.2015 | Language: | FR | The application published by WIPO in one of the EPO official languages on 10.10.2013 takes the place of the publication of the European patent application. | [2015/07] | Type: | B1 Patent specification | No.: | EP2834625 | Date: | 24.10.2018 | Language: | FR | [2018/43] | Search report(s) | International search report - published on: | EP | 10.10.2013 | Classification | IPC: | G01N25/00, G01R31/28, H01L21/66 | [2015/07] | CPC: |
H01L22/14 (EP,US);
G01N27/041 (US);
G01N27/125 (US);
G01N33/0095 (EP,US);
H01L22/12 (US)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2015/07] | Extension states | BA | Not yet paid | ME | Not yet paid | Title | German: | BESTIMMUNG DER KONZENTRATION VON INTERSTITIELLEM SAUERSTOFF IN EINER HALBLEITERPROBE | [2015/07] | English: | DETERMINATION OF THE CONCENTRATION OF INTERSTITIAL OXYGEN IN A SEMICONDUCTOR SAMPLE | [2015/07] | French: | DETERMINATION DE LA CONCENTRATION EN OXYGENE INTERSTITIEL DANS UN ECHANTILLON SEMI-CONDUCTEUR | [2015/07] | Entry into regional phase | 03.11.2014 | National basic fee paid | 03.11.2014 | Designation fee(s) paid | 03.11.2014 | Examination fee paid | Examination procedure | 03.11.2014 | Examination requested [2015/07] | 08.07.2015 | Amendment by applicant (claims and/or description) | 28.05.2018 | Communication of intention to grant the patent | 12.09.2018 | Fee for grant paid | 12.09.2018 | Fee for publishing/printing paid | 12.09.2018 | Receipt of the translation of the claim(s) | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 28.05.2018 | Opposition(s) | 25.07.2019 | No opposition filed within time limit [2019/40] | Fees paid | Renewal fee | 26.03.2015 | Renewal fee patent year 03 | 29.03.2016 | Renewal fee patent year 04 | 30.03.2017 | Renewal fee patent year 05 | 28.03.2018 | Renewal fee patent year 06 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | HU | 05.04.2013 | AL | 24.10.2018 | AT | 24.10.2018 | CY | 24.10.2018 | CZ | 24.10.2018 | DK | 24.10.2018 | EE | 24.10.2018 | ES | 24.10.2018 | FI | 24.10.2018 | HR | 24.10.2018 | IT | 24.10.2018 | LT | 24.10.2018 | LV | 24.10.2018 | MC | 24.10.2018 | MK | 24.10.2018 | MT | 24.10.2018 | NL | 24.10.2018 | PL | 24.10.2018 | RO | 24.10.2018 | RS | 24.10.2018 | SE | 24.10.2018 | SI | 24.10.2018 | SK | 24.10.2018 | SM | 24.10.2018 | TR | 24.10.2018 | BG | 24.01.2019 | GR | 25.01.2019 | IS | 24.02.2019 | PT | 24.02.2019 | GB | 05.04.2019 | IE | 05.04.2019 | LU | 05.04.2019 | BE | 30.04.2019 | CH | 30.04.2019 | LI | 30.04.2019 | [2022/31] |
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BE | 30.04.2019 | ||
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GB | 05.04.2019 | ||
IE | 05.04.2019 | ||
LU | 05.04.2019 | ||
BE | 30.04.2019 | ||
CH | 30.04.2019 | ||
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SM | 24.10.2018 | ||
TR | 24.10.2018 | ||
BG | 24.01.2019 | ||
GR | 25.01.2019 | ||
IS | 24.02.2019 | ||
PT | 24.02.2019 | ||
GB | 05.04.2019 | ||
IE | 05.04.2019 | ||
LU | 05.04.2019 | ||
BE | 30.04.2019 | ||
CH | 30.04.2019 | ||
LI | 30.04.2019 | ||
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BG | 24.01.2019 | ||
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IS | 24.02.2019 | ||
PT | 24.02.2019 | ||
GB | 05.04.2019 | ||
IE | 05.04.2019 | ||
LU | 05.04.2019 | ||
BE | 30.04.2019 | ||
CH | 30.04.2019 | ||
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SM | 24.10.2018 | ||
TR | 24.10.2018 | ||
BG | 24.01.2019 | ||
GR | 25.01.2019 | ||
IS | 24.02.2019 | ||
PT | 24.02.2019 | ||
GB | 05.04.2019 | ||
LU | 05.04.2019 | ||
BE | 30.04.2019 | ||
CH | 30.04.2019 | ||
LI | 30.04.2019 | ||
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SM | 24.10.2018 | ||
BG | 24.01.2019 | ||
GR | 25.01.2019 | ||
IS | 24.02.2019 | ||
PT | 24.02.2019 | ||
GB | 05.04.2019 | ||
LU | 05.04.2019 | ||
BE | 30.04.2019 | ||
CH | 30.04.2019 | ||
LI | 30.04.2019 | ||
Former [2020/04] | AL | 24.10.2018 | |
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SK | 24.10.2018 | ||
SM | 24.10.2018 | ||
BG | 24.01.2019 | ||
GR | 25.01.2019 | ||
IS | 24.02.2019 | ||
PT | 24.02.2019 | ||
LU | 05.04.2019 | ||
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BG | 24.01.2019 | ||
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SM | 24.10.2018 | ||
BG | 24.01.2019 | ||
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PT | 24.02.2019 | ||
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RO | 24.10.2018 | ||
RS | 24.10.2018 | ||
SE | 24.10.2018 | ||
SK | 24.10.2018 | ||
SM | 24.10.2018 | ||
BG | 24.01.2019 | ||
GR | 25.01.2019 | ||
IS | 24.02.2019 | ||
PT | 24.02.2019 | ||
Former [2019/37] | AL | 24.10.2018 | |
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CZ | 24.10.2018 | ||
DK | 24.10.2018 | ||
EE | 24.10.2018 | ||
ES | 24.10.2018 | ||
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IT | 24.10.2018 | ||
LT | 24.10.2018 | ||
LV | 24.10.2018 | ||
NL | 24.10.2018 | ||
PL | 24.10.2018 | ||
RO | 24.10.2018 | ||
RS | 24.10.2018 | ||
SE | 24.10.2018 | ||
SM | 24.10.2018 | ||
BG | 24.01.2019 | ||
GR | 25.01.2019 | ||
IS | 24.02.2019 | ||
PT | 24.02.2019 | ||
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BG | 24.01.2019 | ||
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BG | 24.01.2019 | ||
GR | 25.01.2019 | ||
IS | 24.02.2019 | ||
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RS | 24.10.2018 | ||
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BG | 24.01.2019 | ||
GR | 25.01.2019 | ||
IS | 24.02.2019 | ||
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PL | 24.10.2018 | ||
SE | 24.10.2018 | ||
BG | 24.01.2019 | ||
GR | 25.01.2019 | ||
IS | 24.02.2019 | ||
Former [2019/23] | AT | 24.10.2018 | |
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FI | 24.10.2018 | ||
HR | 24.10.2018 | ||
LT | 24.10.2018 | ||
LV | 24.10.2018 | ||
NL | 24.10.2018 | ||
PL | 24.10.2018 | ||
BG | 24.01.2019 | ||
IS | 24.02.2019 | ||
Former [2019/22] | FI | 24.10.2018 | |
LT | 24.10.2018 | ||
NL | 24.10.2018 | ||
PL | 24.10.2018 | ||
BG | 24.01.2019 | ||
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Former [2019/20] | LT | 24.10.2018 | |
NL | 24.10.2018 | ||
Former [2019/17] | NL | 24.10.2018 | Cited in | International search | [X] - SIMOEN E ET AL, "Characterisation of oxygen and oxygen-related defects in highly- and lowly-doped silicon", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, (20030915), vol. 102, no. 1-3, doi:10.1016/S0921-5107(02)00706-7, ISSN 0921-5107, pages 207 - 212, XP004450731 [X] 1,7-9 * paragraph [1.Introduction] * * page 208, column l, paragraph l * * page 211, line 3 - page 212, line 2 * DOI: http://dx.doi.org/10.1016/S0921-5107(02)00706-7 | [YD] - ULYASHIN A G ET AL, "Characterization of the oxygen distribution in Czochralski silicon using hydrogen-enhanced thermal donor formation", MATERIALS SCIENCE AND ENGINEERING B, ELSEVIER SEQUOIA, LAUSANNE, CH, (20000401), vol. 73, no. 1-3, doi:10.1016/S0921-5107(99)00447-X, ISSN 0921-5107, pages 124 - 129, XP004192033 [YD] 1-9 * paragraph [1.Introduction] * DOI: http://dx.doi.org/10.1016/S0921-5107(99)00447-X | [Y] - SASSELLA A ET AL, "Influence of oxygen precipitation on the measure of interstitial oxygen concentration in silicon from the 1207 cm-1 infrared absorption band", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, (20020101), vol. 91, no. 1, doi:10.1063/1.1423393, ISSN 0021-8979, pages 166 - 170, XP012054470 [Y] 1-9 * paragraph [I.Introduction] * * paragraph [II:Experiment] * DOI: http://dx.doi.org/10.1063/1.1423393 | [Y] - SAITO H ET AL, "Determination of Interstitial Oxgen Concentration in Oxygen-Precipitated Silicon Wafers by Low-Temperature High-Resolution Infrared Spectroscopy", JAPANESE JOURNAL OF APPLIED PHYSICS, THE JAPAN SOCIETY OF APPLIED PHYSICS, JAPAN SOCIETY OF APPLIED PHYSICS, TOKYO; JP, (19950901), vol. 34, no. 9A, PART 02, doi:10.1143/JJAP.34.L1097, ISSN 0021-4922, pages L1097 - L1099, XP002115943 [Y] 1-9 * page L 1097 * DOI: http://dx.doi.org/10.1143/JJAP.34.L1097 | Examination | EP2697632 | by applicant | FR2964459 | - A.G. ULYASHIN ET AL., MATERIALS SCIENCE AND ENGINEERING, (2000), vol. B73, pages 124 - 129 | - E. SIMOEN ET AL., MATERIALS SCIENCE AND ENGINEERING, (2003), vol. B102, pages 207 - 212 | - WIJARANAKULA C.A. ET AL., "Formation kinetics of oxygen thermal donors in silicon", APPL. PHYS. LETT., (1991), vol. 59, no. 13, doi:doi:10.1063/1.106245, page 1608, XP055114038 DOI: http://dx.doi.org/10.1063/1.106245 | - LONDOS C.A ET AL., "Effect of oxygen concentration on the kinetics of thermal donor formation in silicon at temperatures between 350 and 500 °C", APPL. PHYS. LETT., (1993), vol. 62, no. 13, doi:doi:10.1063/1.108628, page 1525, XP002402566 DOI: http://dx.doi.org/10.1063/1.108628 |