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Extract from the Register of European Patents

EP About this file: EP2885815

EP2885815 - METHOD OF MAKING A THREE-DIMENSIONAL MEMORY ARRAY WITH ETCH STOP [Right-click to bookmark this link]
StatusThe application is deemed to be withdrawn
Status updated on  03.06.2016
Database last updated on 15.06.2024
Most recent event   Tooltip03.06.2016Application deemed to be withdrawnpublished on 06.07.2016  [2016/27]
Applicant(s)For all designated states
SanDisk Technologies Inc.
Two Legacy Town Center
6900 North Dallas Parkway
Plano, Texas 75024 / US
[2015/26]
Inventor(s)01 / LEE, Yao-Sheng
c/o Sandisk Corporation
951 SanDisk Drive
Milpitas, California 95035 / US
02 / ALSMEIER, Johann
c/o Sandisk Corporation
951 SanDisk Drive
Milpitas, California 95035 / US
 [2015/26]
Representative(s)Tothill, John Paul
Dehns
St Bride's House
10 Salisbury Square
London
EC4Y 8JD / GB
[2015/26]
Application number, filing date13739909.309.07.2013
WO2013US49758
Priority number, dateUS20121358641315.08.2012         Original published format: US201213586413
[2015/26]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2014028140
Date:20.02.2014
Language:EN
[2014/08]
Type: A1 Application with search report 
No.:EP2885815
Date:24.06.2015
Language:EN
The application published by WIPO in one of the EPO official languages on 20.02.2014 takes the place of the publication of the European patent application.
[2015/26]
Search report(s)International search report - published on:EP20.02.2014
ClassificationIPC:H01L27/115, H01L21/764, H01L29/792, H01L29/788
[2015/26]
CPC:
H01L21/764 (EP,KR,US); H10B41/20 (US); H01L29/7889 (EP,KR,US);
H01L29/7926 (EP,KR,US); H10B41/27 (EP,KR,US); H10B43/20 (US);
H10B43/27 (EP,US); H10B43/35 (EP,US); H10B41/35 (EP,US) (-)
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2015/26]
TitleGerman:VERFAHREN ZUR HERSTELLUNG EINER DREIDIMENSIONALEN SPEICHERMATRIX MIT ÄTZSTOPPSCHICHT[2015/26]
English:METHOD OF MAKING A THREE-DIMENSIONAL MEMORY ARRAY WITH ETCH STOP[2015/26]
French:PROCÉDÉ DE RÉALISATION D'UN RÉSEAU DE MÉMOIRE À TROIS DIMENSIONS À ARRÊT DE GRAVURE[2015/26]
Entry into regional phase13.03.2015National basic fee paid 
13.03.2015Designation fee(s) paid 
13.03.2015Examination fee paid 
Examination procedure13.03.2015Amendment by applicant (claims and/or description)
13.03.2015Examination requested  [2015/26]
02.02.2016Application deemed to be withdrawn, date of legal effect  [2016/27]
01.03.2016Despatch of communication that the application is deemed to be withdrawn, reason: renewal fee not paid in time  [2016/27]
Fees paidPenalty fee
Additional fee for renewal fee
31.07.201503   M06   Not yet paid
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Cited inInternational search[A]US5972722  (VISOKAY MARK R [US], et al) [A] 10-23* column 4, line 3 - line 19; figure 1 *;
 [A]US2010148237  (KITO MASARU [JP], et al) [A] 10-23 * paragraphs [0083] - [0090]; figures 6-11 *;
 [XYI]US2011031547  (WATANABE NOBUTAKA [JP]) [X] 1-4,9 * paragraphs [0063] - [0092]; figures 2-12B * [Y] 5,6 [I] 10-23;
 [XAY]US2012001252  (ALSMEIER JOHANN [US], et al) [X] 1-4,9 * paragraphs [0077] - [0090]; figures 14A-20B * [A] 10-23 [Y] 5-8;
 [YA]US2012146122  (WHANG SUNG JIN [KR], et al) [Y] 5-8 * abstract * * paragraphs [0010] - [0012] - [0028] - [0030] - [0050] * [A] 10-23;
 [XA]US2012199897  (CHANG SUNG-IL [KR], et al) [X] 1-3 * paragraphs [0063] - [0087]; figures 2-16 * [A] 4-23
by applicant   - T. ENDOH, "Novel Ultra High Density Memory With A Stacked-Surrounding Gate Transistor (S-SGT) Structured Cell", IEDM PROC., (2001), pages 33 - 36, XP001075490
 US20100827947
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.