Deutsch English Français

Contact

EP2923381

European procedure

Quick help

Maintenance news

Scheduled maintenance

Regular maintenance outages:
between 05.00 and 05.15 hrs CET (Monday to Sunday).

Other outages
Availability
Register Forum

2022.02.11

More...

News flashes

News Flashes

New version of the European Patent Register – SPC proceedings information in the Unitary Patent Register.

2024-07-24

More...

Extract from the Register of European Patents

EP About this file: EP2923381

EP2923381 - DEVICE ARCHITECTURE AND METHOD FOR IMPROVED PACKING OF VERTICAL FIELD EFFECT DEVICES [Right-click to bookmark this link]
Status	The application has been withdrawn Status updated on 06.12.2019 Database last updated on 24.08.2024
Former	Examination is in progress Status updated on 07.08.2019
Most recent event Tooltip	06.12.2019	Withdrawal of application	published on 08.01.2020 [2020/02]
Applicant(s)	For all designated states D3 Semiconductor LLC 15050 E. Beltwood Parkway Addison, TX 75001 / US
	[2015/40]
Inventor(s)	01 / HARRINGTON, Thomas, E. 15050 E. Beltwood Parkway Addison, TX 75001 / US
	02 / YANG, Robert, Kuo-chang 15050 E. Beltwood Parkway Addison, TX 75001 / US
	[2015/40]
Representative(s)	Barton, Matthew Thomas Forresters IP LLP Skygarden Erika-Mann-Strasse 11 80636 München / DE
	[N/P]
Former [2015/40]	Barton, Matthew Thomas Forresters Skygarden Erika-Mann-Strasse 11 80636 München / DE
Application number, filing date	13857471.0	26.11.2013
	[2015/40]
	WO2013US72095
Priority number, date	US201261729686P	26.11.2012 Original published format: US 201261729686 P
	[2015/40]
Filing language	EN
Procedural language	EN
Publication	Type:	A1 Application with search report
	No.:	WO2014082095
	Date:	30.05.2014
	Language:	EN
	[2014/22]
	Type:	A1 Application with search report
	No.:	EP2923381
	Date:	30.09.2015
	Language:	EN
	The application published by WIPO in one of the EPO official languages on 30.05.2014 takes the place of the publication of the European patent application.
	[2015/40]
Search report(s)	International search report - published on:	US	30.05.2014
	(Supplementary) European search report - dispatched on:	EP	18.07.2016
Classification	IPC:	H01L29/04, H01L29/78, H01L21/336	[2016/33]
	CPC:	H01L29/7813 (EP,US); H01L21/26586 (US); H01L21/3083 (US); H01L21/31155 (US); H01L29/045 (EP,US); H01L29/0634 (EP,US); (+) H01L29/0653 (EP,US); H01L29/0696 (EP,US); H01L29/1095 (EP,US); H01L29/4236 (US); H01L29/42376 (US); H01L29/4238 (EP,US); H01L29/66348 (EP,US); H01L29/66666 (US); H01L29/66719 (US); H01L29/66734 (EP,US); H01L29/7397 (EP,US); H01L29/7827 (US) (-)
	Former IPC [2015/40]	H01L29/04
Designated contracting states	AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2015/40]
Title	German:	VORRICHTUNGSARCHITEKTUR UND VERFAHREN FÜR EIN VERBESSERTES GEHÄUSE VON VERTIKALEN FELDEFFEKTANORDNUNGEN	[2015/40]
	English:	DEVICE ARCHITECTURE AND METHOD FOR IMPROVED PACKING OF VERTICAL FIELD EFFECT DEVICES	[2015/40]
	French:	ARCHITECTURE DE DISPOSITIF ET PROCÉDÉ D'EMBALLAGE AMÉLIORÉ DE DISPOSITIFS À EFFET DE CHAMP VERTICAUX	[2015/40]
Entry into regional phase	26.06.2015	National basic fee paid
	26.06.2015	Search fee paid
	26.06.2015	Designation fee(s) paid
	26.06.2015	Examination fee paid
Examination procedure	26.06.2015	Examination requested [2015/40]
	14.02.2017	Amendment by applicant (claims and/or description)
	12.08.2019	Despatch of a communication from the examining division (Time limit: M04)
	05.12.2019	Application withdrawn by applicant [2020/02]
Divisional application(s)	The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 12.08.2019
Fees paid	Renewal fee
	25.11.2015	Renewal fee patent year 03
	30.11.2016	Renewal fee patent year 04
	30.11.2017	Renewal fee patent year 05
	30.11.2018	Renewal fee patent year 06
Opt-out from the exclusive Tooltip competence of the Unified Patent Court	See the Register of the Unified Patent Court for opt-out data
	Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Documents cited:	Search	[XA]WO2012149195 (FAIRCHILD SEMICONDUCTOR [US], et al) [X] 1-4,7-9,12,13,15 * paragraph [000111] - paragraph [000116]; figures 19A-19L * * paragraph [00143] - paragraph [00145]; figures 27A,27B,28 * [A] 11;
		[Y]US2004036121 (AOKI TAKAAKI [JP], et al) [Y] 1-10,12-15 * paragraph [0059] - paragraph [0062]; figure 2 * * paragraph [0128] - paragraph [0132]; figure 11 *;
		[Y]US2007029597 (LEE JAE-GIL [KR], et al) [Y] 1-10,12-15 * paragraph [0003] - paragraph [0004] * * paragraph [0058] - paragraph [0061]; figures 6,7 * * paragraph [0078] - paragraph [0080]; figure 11 *;
		[Y]WO2011013379 (FUJI ELECTRIC SYSTEMS CO LTD [JP], et al) [Y] 1-10,12-15 * paragraph [0077] - paragraph [0083]; figures 1-4 * * paragraph [0121]; figures 50-51 *;
		[Y]JP2005317828 (SUMITOMO ELECTRIC INDUSTRIES) [Y] 5 * abstract * * paragraph [0055] *;
		[A] - E.A. Lewis, "The Effect of Surface Orientation on Silicon Oxidation Kinetics", J. Electrochem. Soc: SOLID-STATE SCIENCE AND TECHNOLOGY, (19870901), pages 2322 - 2329, URL: http://jes.ecsdl.org/content/134/9/2332.full.pdf, (20160707), XP055286806 [A] 10,14 * the whole document * DOI: http://dx.doi.org/10.1149/1.2100881
	International search	[Y]US2005035401 (YAMAGUCHI HITOSHI [JP], et al);
		[Y]US2007108512 (SEDLMAIER STEFAN [DE], et al);
		[Y]WO2012149195 (FAIRCHILD SEMICONDUCTOR [US], et al);
		[Y]US2008258239 (ISHIGURO TAKESHI [JP]);
		[Y]US2011180812 (MASUDA TAKEYOSHI [JP], et al);
		[Y]US2004036121 (AOKI TAKAAKI [JP], et al);
		[A]US2010193800 (UCHIDA MASAO [JP], et al);
		[A]US2006102953 (MIURA YOSHINAO [JP], et al)
	by applicant	WO2012149195
		US2004036121
		US2007029597
		WO2011013379
		JP2005317828

The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.

Legal notice
Terms of use
24.2.25; 35p