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EP2765613
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EP About this file: EP2765613
| EP2765613 - Process for fabricating a transistor [Right-click to bookmark this link] | Status | The application is deemed to be withdrawn Status updated on 10.07.2015 Database last updated on 31.08.2024 | Most recent event Tooltip | 10.07.2015 | Application deemed to be withdrawn | published on 12.08.2015 [2015/33] | Applicant(s) | For all designated states COMMISSARIAT À L'ÉNERGIE ATOMIQUE ET AUX ÉNERGIES ALTERNATIVES Bâtiment "Le Ponant D" 25, rue Leblanc 75015 Paris / FR | For all designated states STMicroelectronics (Crolles 2) SAS 850, rue Jean Monnet 38920 Crolles / FR | For all designated states STmicroelectronics SA 29, boulevard Romain Rolland 92120 Montrouge / FR | [N/P] |
| Former [2014/33] | For all designated states COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES Bâtiment "Le Ponant D" 25, rue Leblanc 75015 Paris / FR | ||
| For all designated states STMicroelectronics (Crolles 2) SAS 850, rue Jean Monnet 38920 Crolles / FR | |||
| For all designated states STmicroelectronics SA 29, boulevard Romain Rolland 92120 Montrouge / FR | Inventor(s) | 01 /
Niebojewski, Heimanu 10 Rue des Bergers 38000 Grenoble / FR | 02 /
Morand, Yves 16 rue Amédée Morel 38000 Grenoble / FR | 03 /
Vinet, Maud 171 B Chemin des Vignes 38140 Rives / FR | [2014/33] | Representative(s) | Hautier, Nicolas Cabinet Hautier 20, rue de la Liberté 06000 Nice / FR | [N/P] |
| Former [2014/33] | Hautier, Nicolas Cabinet Hautier 20, rue de la Liberté 06000 Nice / FR | Application number, filing date | 14154710.9 | 11.02.2014 | [2014/33] | Priority number, date | FR20130051140 | 11.02.2013 Original published format: FR 1351140 | [2014/33] | Filing language | FR | Procedural language | FR | Publication | Type: | A1 Application with search report | No.: | EP2765613 | Date: | 13.08.2014 | Language: | FR | [2014/33] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 06.03.2014 | Classification | IPC: | H01L29/786, H01L29/66 | [2014/33] | CPC: |
H01L29/6656 (EP,US);
H01L21/84 (EP,US);
H01L27/1203 (EP,US);
H01L29/66636 (EP,US);
H01L29/66772 (EP,US);
H01L29/78603 (EP,US)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2014/33] | Extension states | BA | Not yet paid | ME | Not yet paid | Title | German: | Herstellungsverfahren eines Transistors | [2014/33] | English: | Process for fabricating a transistor | [2014/33] | French: | Procédé de fabrication d'un transistor | [2014/33] | Examination procedure | 11.02.2014 | Examination requested [2014/33] | 14.02.2015 | Application deemed to be withdrawn, date of legal effect [2015/33] | 25.03.2015 | Despatch of communication that the application is deemed to be withdrawn, reason: examination fee not paid in time [2015/33] |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [A]US2006094182 (HANAFI HUSSEIN I [US], et al) [A] 1-17 * abstract * * figures 18-24 * * paragraphs [0024] , [0026] , [0029] , [0033] , [0034] , [0035] , [0037] *; | [A]US2007166890 (CHENG KANGGUO [US], et al) [A] 1-17 * abstract * * paragraphs [0027] , [0030] , [0033] *; | [A]US2007278591 (LUO ZHIJIONG [US], et al) [A] 1-17 * abstract * * figures 1-8 ** paragraphs [0005] , [0023] , [0024] *; | [I]US2012273886 (ZHONG HUICAI [US], et al) [I] 1-17 * abstract * * figures 1-9 * * paragraphs [0064] - [0071] - [0074] * | by applicant | - A. BAGHIZADEH; D. AGHA-ALIGOL; D. FATHY; M. LAMEHI-RACHTI; M. MORADI, "Formation of As enriched layer by steam oxidation of As+-implanted Si", APPLIED SURFACE SCIENCE, (2009), vol. 255, pages 5857 - 5860 | - "Oxide Growth Enhancement on Highly n-Type Doped Silicon under Steam Oxidation", ERICH BIERMANN; HORST H. BERGER; PETER LINKE; BERNT MULLER, J. Electrochem. Soc., THE ELECTROCHEMICAL SOCIETY, INC., (199604), vol. 143 | - B. E. DEAL; M. SKLARRESEARCH, "Thermal Oxidation of Heavily Doped Silicon", DEVELOPMENT LABORATORY, FAIRCHILD SEMICONDUCTOR, vol. 112, no. 4 | - DE BAUER; S.G. THOMAS, THIN SOLID FILMS, (2012), vol. 520, pages 3133 - 3138 |