EP2787104 - Method for producing group 13 nitride crystal and apparatus for producing the same [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 24.03.2017 Database last updated on 24.08.2024 | Most recent event Tooltip | 10.07.2020 | Lapse of the patent in a contracting state New state(s): IS | published on 12.08.2020 [2020/33] | Applicant(s) | For all designated states Ricoh Company, Ltd. 3-6, Nakamagome 1-chome Ohta-ku Tokyo 143-8555 / JP | [N/P] |
Former [2015/40] | For all designated states Ricoh Company, Ltd. 3-6, Nakamagome 1-chome Ohta-ku Tokyo 143-8555 / JP | ||
Former [2014/41] | For all designated states Ricoh Company Ltd. 3-6, Nakamagome 1-chome Ohta-ku Tokyo 143-8555 / JP | Inventor(s) | 01 /
Satoh, Takashi c/o Ricoh Company, Ltd. 3-6, Nakamagome 1-chome Ohta-ku Tokyo 143-8555 / JP | 02 /
Sarayama, Seiji c/o Ricoh Company, Ltd. 3-6, Nakamagome 1-chome Ohta-ku Tokyo 143-8555 / JP | 03 /
Hayashi, Masahiro c/o Ricoh Company, Ltd. 3-6, Nakamagome 1-chome Ohta-ku Tokyo 143-8555 / JP | 04 /
Miyoshi, Naoya c/o Ricoh Company, Ltd. 3-6, Nakamagome 1-chome Ohta-ku Tokyo 143-8555 / JP | [2014/41] | Representative(s) | Leeming, John Gerard J A Kemp 14 South Square Gray's Inn London WC1R 5JJ / GB | [2014/41] | Application number, filing date | 14157492.1 | 03.03.2014 | [2014/41] | Priority number, date | JP20130051056 | 13.03.2013 Original published format: JP 2013051056 | [2014/41] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP2787104 | Date: | 08.10.2014 | Language: | EN | [2014/41] | Type: | B1 Patent specification | No.: | EP2787104 | Date: | 18.05.2016 | Language: | EN | [2016/20] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 28.07.2014 | Classification | IPC: | C30B9/10, C30B9/12, C30B29/40 | [2014/41] | CPC: |
C30B9/12 (EP,US);
C30B29/403 (EP,US);
C30B29/406 (EP,US);
Y10T117/1024 (EP,US)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2014/41] | Title | German: | Verfahren zur Herstellung von 13 Nitridkristall der Gruppe 13 und Vorrichtung zu seiner Herstellung | [2014/41] | English: | Method for producing group 13 nitride crystal and apparatus for producing the same | [2014/41] | French: | Procédé de production de cristaux de nitrure du groupe 13 et son appareil de production | [2014/41] | Examination procedure | 03.03.2014 | Examination requested [2014/41] | 31.12.2014 | Amendment by applicant (claims and/or description) | 01.07.2015 | Communication of intention to grant the patent | 04.09.2015 | Disapproval of the communication of intention to grant the patent by the applicant or resumption of examination proceedings by the EPO | 23.10.2015 | Communication of intention to grant the patent | 17.02.2016 | Fee for grant paid | 17.02.2016 | Fee for publishing/printing paid | 17.02.2016 | Receipt of the translation of the claim(s) | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 01.07.2015 | Opposition(s) | 21.02.2017 | No opposition filed within time limit [2017/17] | Fees paid | Renewal fee | 25.03.2016 | Renewal fee patent year 03 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | HU | 03.03.2014 | AL | 18.05.2016 | AT | 18.05.2016 | BE | 18.05.2016 | BG | 18.05.2016 | CY | 18.05.2016 | CZ | 18.05.2016 | DK | 18.05.2016 | EE | 18.05.2016 | ES | 18.05.2016 | FI | 18.05.2016 | HR | 18.05.2016 | IT | 18.05.2016 | LT | 18.05.2016 | LV | 18.05.2016 | MC | 18.05.2016 | MK | 18.05.2016 | NL | 18.05.2016 | PL | 18.05.2016 | RO | 18.05.2016 | RS | 18.05.2016 | SE | 18.05.2016 | SI | 18.05.2016 | SK | 18.05.2016 | SM | 18.05.2016 | TR | 18.05.2016 | NO | 18.08.2016 | GR | 19.08.2016 | IS | 18.09.2016 | PT | 19.09.2016 | [2020/33] |
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NO | 18.08.2016 | Documents cited: | Search | [A]EP1806437 (SUMITOMO METAL IND [JP]) [A] 4 * paragraphs [0014] , [0022] - paragraph [0024]; figures 2,3 *; | [A]JP2010168236 (NGK INSULATORS LTD) [A] 1-9 * paragraph [0005] - paragraph [0007]; figure 1 * * paragraphs [0022] - [0023]; examples 1-2,7; claims 1-4 *; | [A]US2011274609 (SHIMODAIRA TAKANAO [JP], et al) [A] 1-9* paragraphs [0005] - [0006] - [0010] - [0011] - [0024] - paragraph [0028]; figure 1; examples 1,7-9; table 1 *; | [XI]WO2013021804 (NGK INSULATORS LTD [JP], et al) [X] 1,2,5-7 * see family document EP2743382 for cited passages * [I] 8; | EP2743382 [ ] (NGK INSULATORS LTD [JP]) [ ] * paragraphs [0009] , [0011] , [0012] , [0018] - paragraph [0024]; figures 4-5 * * paragraphs [0037] , [0045] , [0050] , [0061]; figures 12-15; examples 1-4; table 1 *; | [A] - BELLMANN M P ET AL, "Effect of accelerated crucible rotation on the segregation of impurities in vertical Bridgman growth of multi-crystalline silicon", JOURNAL OF CRYSTAL GROWTH, vol. 318, no. 1, doi:10.1016/J.JCRYSGRO.2010.10.069, ISSN 0022-0248, (20101026), pages 239 - 243, (20101026), XP028164356 [A] 1-9 * the whole document * DOI: http://dx.doi.org/10.1016/j.jcrysgro.2010.10.069 | [A] - SCHEEL ET AL, "Accelerated crucible rotation: A novel stirring technique in high-temperature solution growth", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 13-14, doi:10.1016/0022-0248(72)90516-7, ISSN 0022-0248, (19720501), pages 560 - 565, (19720501), XP024732583 [A] 4 * the whole document * DOI: http://dx.doi.org/10.1016/0022-0248(72)90516-7 | [A] - KASHIWAGI D ET AL, "Global analysis of GaN growth using a solution technique", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 310, no. 7-9, doi:10.1016/J.JCRYSGRO.2007.10.061, ISSN 0022-0248, (20080401), pages 1790 - 1793, (20071030), XP022697532 [A] 1-9 * the whole document * DOI: http://dx.doi.org/10.1016/j.jcrysgro.2007.10.061 | by applicant | JP2007254161 | JP2007277055 | JP4189423B | JP2010083711 | JP2011213579 |