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EP2779212
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EP About this file: EP2779212
| EP2779212 - Method of forming a high electron mobility semiconductor device [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 24.03.2017 Database last updated on 30.10.2024 | |
| Former | Examination is in progress Status updated on 10.03.2017 | Most recent event Tooltip | 24.03.2017 | Withdrawal of application | published on 26.04.2017 [2017/17] | Applicant(s) | For all designated states Semiconductor Components Industries, LLC 5005 East McDowell Road Phoenix, AZ 85008 / US | [2014/38] | Inventor(s) | 01 /
Salih, Ali 2953 E Hackamore Street Mesa, AZ 85213 / US | 02 /
Parsey, Jr, John 1321 E Desert Flower Lane Phoenix, AZ 85048 / US | [2014/38] | Representative(s) | Clarke, Geoffrey Howard, et al Avidity IP Broers Building Hauser Forum 21 JJ Thomson Ave Cambridge CB3 0FA / GB | [N/P] |
| Former [2014/38] | Clarke, Geoffrey Howard, et al Avidity IP Kestrel House Falconry Court Baker's Lane Epping, Essex CM16 5DQ / GB | Application number, filing date | 14159907.6 | 14.03.2014 | [2014/38] | Priority number, date | US201361786577P | 15.03.2013 Original published format: US 201361786577 P | [2014/38] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP2779212 | Date: | 17.09.2014 | Language: | EN | [2014/38] | Type: | A3 Search report | No.: | EP2779212 | Date: | 12.11.2014 | Language: | EN | [2014/46] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 15.10.2014 | Classification | IPC: | H01L21/18, H01L21/02 | [2014/38] | CPC: |
H01L21/187 (EP,CN,US);
H01L29/778 (US);
H01L21/02365 (US);
H01L21/6835 (EP,CN,US);
H01L29/045 (EP,CN,US);
H01L29/0657 (EP,CN,US);
H01L29/66462 (EP,CN,US);
H01L29/7786 (EP,CN,US);
H01L29/7789 (EP,CN,US);
H01L2221/68368 (EP,CN,US)
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| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2015/25] |
| Former [2014/38] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Title | German: | Verfahren zur Herstellung eines Halbleiterbauelements mit hoher Elektronenbeweglichkeit | [2014/38] | English: | Method of forming a high electron mobility semiconductor device | [2014/38] | French: | Procédé de formation d'un dispositif semi-conducteur à haute mobilité d'électrons | [2014/38] | Examination procedure | 11.05.2015 | Amendment by applicant (claims and/or description) | 11.05.2015 | Examination requested [2015/25] | 09.03.2017 | Despatch of a communication from the examining division (Time limit: M04) | 21.03.2017 | Application withdrawn by applicant [2017/17] | Divisional application(s) | The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is 09.03.2017 | Fees paid | Renewal fee | 08.03.2016 | Renewal fee patent year 03 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [I]US2006035440 (GHYSELEN BRUNO [FR], et al); | [X]EP1873817 (SUMITOMO ELECTRIC INDUSTRIES [JP]); | [I]JP2011077102 (TOYODA GOSEI KK) | Examination | US6344375 | WO2004061944 |