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EP2849232
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EP About this file: EP2849232
| EP2849232 - Semiconductor device and method for manufacturing the same [Right-click to bookmark this link] | Status | The application has been withdrawn Status updated on 24.06.2016 Database last updated on 11.09.2024 | Most recent event Tooltip | 24.06.2016 | Withdrawal of application | published on 27.07.2016 [2016/30] | Applicant(s) | For all designated states Kabushiki Kaisha Toshiba 1-1, Shibaura 1-Chome Minato-Ku Tokyo 105-8001 / JP | [2015/12] | Inventor(s) | 01 /
Ota, Chiharu c/o IP Div. Toshiba Corp. (K. K. TOSHIBA) 1-1, Shibaura 1-chome Minato-ku, Tokyo / JP | 02 /
Takao, Kazuto c/o IP Div. Toshiba Corp. (K. K. TOSHIBA) 1-1, Shibaura 1-chome Minato-ku, Tokyo / JP | 03 /
Nishio, Johji c/o IP Div. Toshiba Corp. (K. K. TOSHIBA) 1-1, Shibaura 1-chome Minato-ku, Tokyo / JP | 04 /
Shinohe, Takashi c/o IP Div. Toshiba Corp. (K. K. TOSHIBA) 1-1, Shibaura 1-chome Minato-ku, Tokyo / JP | [2015/12] | Representative(s) | Moreland, David, et al Marks & Clerk LLP The Beacon 176 St Vincent Street Glasgow G2 5SG / GB | [N/P] |
| Former [2015/12] | Granleese, Rhian Jane Marks & Clerk LLP 90 Long Acre London WC2E 9RA / GB | Application number, filing date | 14181168.7 | 15.08.2014 | [2015/12] | Priority number, date | JP20130189795 | 12.09.2013 Original published format: JP 2013189795 | [2015/12] | Filing language | EN | Procedural language | EN | Publication | Type: | A2 Application without search report | No.: | EP2849232 | Date: | 18.03.2015 | Language: | EN | [2015/12] | Type: | A3 Search report | No.: | EP2849232 | Date: | 06.05.2015 | Language: | EN | [2015/19] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 10.04.2015 | Classification | IPC: | H01L29/861, H01L29/16 | [2015/12] | CPC: |
H01L29/1608 (EP,US);
H01L21/02529 (US);
H01L21/02664 (US);
H01L29/36 (US);
H01L29/861 (EP,US)
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2015/12] | Extension states | BA | Not yet paid | ME | Not yet paid | Title | German: | Halbleiterbauelement und Verfahren zur Herstellung davon | [2015/12] | English: | Semiconductor device and method for manufacturing the same | [2015/12] | French: | Dispositif semi-conducteur et son procédé de fabrication | [2015/12] | Examination procedure | 15.08.2014 | Examination requested [2015/12] | 05.11.2015 | Amendment by applicant (claims and/or description) | 20.06.2016 | Application withdrawn by applicant [2016/30] |
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| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [X]EP2110857 (KANSAI ELECTRIC POWER CO [JP], et al) [X] 1,2,17,18 * paragraphs [0037] , [0 61]; figure 1 *; | [X]WO9926296 (ABB RESEARCH LTD [CH], et al) [X] 1 * page 14, line 15 - line 23; figure 14 *; | [A]EP1973165 (KANSAI ELECTRIC POWER CO [JP], et al) [A] 1-16 * the whole document *; | [A]EP2154723 (CREE INC [US]) [A] 1-16 * figure 2A *; | [A]WO9507548 (SIEMENS AG [DE], et al) [A] 1-16 * abstract *; | [A] - LOSEE P A ET AL, "Degraded Blocking Performance of 4H-SiC Rectifiers under High dV/dt Conditions", POWER SEMICONDUCTOR DEVICES AND ICS, 2005. PROCEEDINGS. ISPSD '05. THE 17TH INTERNATIONAL SYMPOSIUM ON SANTA BARBARA, CA, USA MAY 23-26, 2005, PISCATAWAY, NJ, USA,IEEE, (20050523), doi:10.1109/ISPSD.2005.1487990, ISBN 978-0-7803-8890-1, pages 219 - 222, XP010820730 [A] 1-16 * figure 1b * DOI: http://dx.doi.org/10.1109/ISPSD.2005.1487990 | [A] - JANZEN E ET AL, "Intrinsic defects in high-purity SiC", MICROELECTRONIC ENGINEERING, ELSEVIER PUBLISHERS BV., AMSTERDAM, NL, vol. 83, no. 1, doi:10.1016/J.MEE.2005.10.038, ISSN 0167-9317, (20060101), pages 130 - 134, (20060101), XP024954721 [A] 17-19 * the whole document * DOI: http://dx.doi.org/10.1016/j.mee.2005.10.038 |