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EP3018715
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EP About this file: EP3018715
| EP3018715 - Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate [Right-click to bookmark this link] | |||
| Former [2016/19] | Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate, and associated transistor device | ||
| [2024/27] | Status | Grant of patent is intended Status updated on 27.06.2024 Database last updated on 22.08.2024 | |
| Former | Examination is in progress Status updated on 04.11.2019 | ||
| Former | Request for examination was made Status updated on 18.11.2016 | Most recent event Tooltip | 27.06.2024 | New entry: Communication of intention to grant a patent | Applicant(s) | For all designated states IMEC VZW Kapeldreef 75 3001 Leuven / BE | [2016/19] | Inventor(s) | 01 /
Sun, Jianwu IMEC VZW, Patent department Kapeldreef 75 3001 Leuven / BE | 02 /
Loo, Roger IMEC VZW, Patent department Kapeldreef 75 3001 Leuven / BE | [2016/19] | Representative(s) | Patent Department IMEC IMEC vzw Patent Department Kapeldreef 75 3001 Leuven / BE | [2016/19] | Application number, filing date | 14191938.1 | 05.11.2014 | [2016/19] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | EP3018715 | Date: | 11.05.2016 | Language: | EN | [2016/19] | Search report(s) | (Supplementary) European search report - dispatched on: | EP | 15.04.2015 | Classification | IPC: | H01L29/66, H01L29/78, H01L29/10 | [2016/19] | CPC: |
H01L29/66795 (EP,US);
H01L21/32055 (US);
H01L21/02532 (US);
H01L21/02645 (US);
H01L21/02647 (US);
H01L21/31111 (US);
H01L29/0649 (US);
H01L29/1054 (EP,US);
H01L29/161 (US);
H01L29/785 (EP,US)
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| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2016/51] |
| Former [2016/19] | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR | Extension states | BA | Not yet paid | ME | Not yet paid | Title | German: | Verfahren zur Herstellung einer Transistorvorrichtung mit einem Germanium-Kanalmaterial auf einem siliziumbasierten Substrat | [2024/27] | English: | Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate | [2024/27] | French: | Procédé de fabrication d'un dispositif de transistor comprenant un matériau de canal de germanium sur un substrat à base de silicium | [2024/27] |
| Former [2016/19] | Verfahren zur Herstellung einer Transistorvorrichtung mit einem Germanium-Kanalmaterial auf einem siliziumbasierten Substrat und zugehörige Transistorvorrichtung | ||
| Former [2016/19] | Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate, and associated transistor device | ||
| Former [2016/19] | Procédé de fabrication d'un dispositif de transistor comprenant un matériau de canal de germanium sur un substrat à base de silicium et dispositif à transistor associé | Examination procedure | 05.11.2014 | Date on which the examining division has become responsible | 10.11.2016 | Amendment by applicant (claims and/or description) | 10.11.2016 | Examination requested [2016/51] | 07.11.2019 | Despatch of a communication from the examining division (Time limit: M06) | 12.05.2020 | Reply to a communication from the examining division | 14.09.2022 | Despatch of a communication from the examining division (Time limit: M06) | 24.03.2023 | Reply to a communication from the examining division | 28.06.2024 | Communication of intention to grant the patent | Fees paid | Renewal fee | 23.11.2016 | Renewal fee patent year 03 | 22.11.2017 | Renewal fee patent year 04 | 22.11.2018 | Renewal fee patent year 05 | 20.11.2019 | Renewal fee patent year 06 | 19.11.2020 | Renewal fee patent year 07 | 18.11.2021 | Renewal fee patent year 08 | 22.11.2022 | Renewal fee patent year 09 | 22.11.2023 | Renewal fee patent year 10 |
| Opt-out from the exclusive Tooltip competence of the Unified Patent Court | See the Register of the Unified Patent Court for opt-out data | ||
| Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Documents cited: | Search | [Y]US2009039361 (LI JIZHONG [US], et al); | [A]US2012094467 (WU CHENG-HSIEN [TW], et al); | [A]US2013234147 (WU CHENG-HSIEN [TW], et al); | [A]EP2741320 (IMEC [BE]); | [A]US2014217499 (LEE YI-JING [TW], et al); | [XI]US2014319462 (HUANG YU-LIEN [TW], et al); | [E]US2015054040 (LEE YI-JING [TW], et al); |