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Extract from the Register of European Patents

EP About this file: EP2973722

EP2973722 - SUPERLATTICE CRENELATED GATE FIELD EFFECT TRANSISTOR [Right-click to bookmark this link]
StatusNo opposition filed within time limit
Status updated on  06.09.2019
Database last updated on 02.07.2024
FormerThe patent has been granted
Status updated on  28.09.2018
FormerGrant of patent is intended
Status updated on  25.07.2018
FormerExamination is in progress
Status updated on  17.11.2017
Most recent event   Tooltip01.07.2022Lapse of the patent in a contracting state
New state(s): MK		published on 03.08.2022  [2022/31]
Applicant(s)For all designated states
Northrop Grumman Systems Corporation
2980 Fairview Park Drive
Falls Church, VA 22042-4511 / US
[2018/44]
Former [2016/03]For all designated states
Northrop Grumman Systems Corporation
2980 Fairview Park Drive
Falls Church, VA 22042-4511 / US
Inventor(s)01 / HOWELL, Robert, S.
10212 Sutherland Road
Silver Spring, MD 20901 / US
02 / STEWART, Eric, J.
1211 Highland Drive
Silver Spring, MD 20910 / US
03 / NECHAY, Bettina, A.
1213 Bay Highlands Drive
Annapolis, MD 21403 / US
04 / PARKE, Justin, A.
4738 Columbia Hill Court
Ellicott City, MD 21043 / US
05 / CRAMER, Harlan, C.
8610 Meadowsweet Court
Columbia, MD 21045 / US
06 / HARTMAN, Jeffrey, D.
1607 Woodruff Court
Severn, MD 21144 / US
 [2018/44]
Former [2016/03]01 / HOWELL, Robert, S.
10212 Sutherland Road
Silver Spring, MD 20901 / US
02 / STEWART, Eric, J.
1105 Dryden Street
Silver Spring, MD 20901 / US
03 / NECHAY, Bettina, A.
1213 Bay Highlands Drive
Annapolis, MD 21403 / US
04 / PARKE, Justin, A.
4738 Columbia Hill Court
Ellicott City, MD 21043 / US
05 / CRAMER, Harlan, C.
8610 Meadowsweet Court
Columbia, MD 21045 / US
06 / HARTMAN, Jeffrey, D.
1607 Woodruff Court
Severn, MD 21144 / US
Representative(s)De Vries & Metman
Overschiestraat 180
1062 XK Amsterdam / NL
[2018/44]
Former [2016/03]Dunleavy, Kevin James
Mendelsohn, Drucker & Dunleavy, P.C.
p/o De Vries & Metman
Overschiestraat 180
1062 XK Amsterdam / NL
Application number, filing date14770672.514.03.2014
[2016/03]
WO2014US27397
Priority number, dateUS20131380274714.03.2013         Original published format: US201313802747
[2016/03]
Filing languageEN
Procedural languageEN
PublicationType: A1 Application with search report
No.:WO2014152490
Date:25.09.2014
Language:EN
[2014/39]
Type: A1 Application with search report 
No.:EP2973722
Date:20.01.2016
Language:EN
The application published by WIPO in one of the EPO official languages on 25.09.2014 takes the place of the publication of the European patent application.
[2016/03]
Type: B1 Patent specification 
No.:EP2973722
Date:31.10.2018
Language:EN
[2018/44]
Search report(s)International search report - published on:KR25.09.2014
(Supplementary) European search report - dispatched on:EP06.02.2017
ClassificationIPC:H01L29/778, H01L21/336, H01L29/10, H01L29/08, // H01L29/20
[2017/10]
CPC:
H01L29/7784 (EP,US); H01L29/0843 (EP,US); H01L29/0847 (EP,US);
H01L29/1029 (EP,US); H01L29/1037 (EP,US); H01L29/155 (US);
H01L29/41766 (US); H01L29/66462 (EP,US); H01L29/2003 (EP,US) (-)
Former IPC [2016/03]H01L29/778, H01L29/78, H01L21/336
Designated contracting statesAL,   AT,   BE,   BG,   CH,   CY,   CZ,   DE,   DK,   EE,   ES,   FI,   FR,   GB,   GR,   HR,   HU,   IE,   IS,   IT,   LI,   LT,   LU,   LV,   MC,   MK,   MT,   NL,   NO,   PL,   PT,   RO,   RS,   SE,   SI,   SK,   SM,   TR [2016/03]
Extension statesBANot yet paid
MENot yet paid
TitleGerman:FELDEFFEKT-TRANSISTOR MIT ÜBERGITTER UND GERIPPTEM GATE[2018/31]
English:SUPERLATTICE CRENELATED GATE FIELD EFFECT TRANSISTOR[2016/03]
French:TRANSISTOR À EFFET DE CHAMP À SUPER-RÉSEAU À GRILLE CRÉNELÉE[2018/31]
Former [2016/03]GATE-FELDEFFEKT-TRANSISTOR MIT GERIPPTEM SUPERGITTER
Former [2016/03]TRANSISTOR À EFFET DE CHAMP À GRILLE CRÉNELÉE DE SUPER-RÉSEAU
Entry into regional phase01.09.2015National basic fee paid 
01.09.2015Search fee paid 
01.09.2015Designation fee(s) paid 
01.09.2015Examination fee paid 
Examination procedure01.09.2015Examination requested  [2016/03]
01.09.2017Amendment by applicant (claims and/or description)
21.11.2017Despatch of a communication from the examining division (Time limit: M04)
23.03.2018Reply to a communication from the examining division
26.07.2018Communication of intention to grant the patent
23.09.2018Receipt of the translation of the claim(s)
24.09.2018Fee for grant paid
24.09.2018Fee for publishing/printing paid
Divisional application(s)The date of the Examining Division's first communication in respect of the earliest application for which a communication has been issued is  21.11.2017
Opposition(s)01.08.2019No opposition filed within time limit [2019/41]
Fees paidRenewal fee
25.03.2016Renewal fee patent year 03
24.03.2017Renewal fee patent year 04
23.03.2018Renewal fee patent year 05
Opt-out from the exclusive  Tooltip
competence of the Unified
Patent Court		 See the Register of the Unified Patent Court for opt-out data
Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court.
Lapses during opposition  TooltipHU14.03.2014
AL31.10.2018
AT31.10.2018
CY31.10.2018
CZ31.10.2018
DK31.10.2018
EE31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
IT31.10.2018
LT31.10.2018
LV31.10.2018
MC31.10.2018
MK31.10.2018
NL31.10.2018
PL31.10.2018
RO31.10.2018
RS31.10.2018
SE31.10.2018
SI31.10.2018
SK31.10.2018
SM31.10.2018
TR31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
PT01.03.2019
IE14.03.2019
MT14.03.2019
BE31.03.2019
CH31.03.2019
LI31.03.2019
[2022/31]
Former [2021/32]HU14.03.2014
AL31.10.2018
AT31.10.2018
CY31.10.2018
CZ31.10.2018
DK31.10.2018
EE31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
IT31.10.2018
LT31.10.2018
LV31.10.2018
MC31.10.2018
NL31.10.2018
PL31.10.2018
RO31.10.2018
RS31.10.2018
SE31.10.2018
SI31.10.2018
SK31.10.2018
SM31.10.2018
TR31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
PT01.03.2019
IE14.03.2019
MT14.03.2019
BE31.03.2019
CH31.03.2019
LI31.03.2019
Former [2021/26]AL31.10.2018
AT31.10.2018
CY31.10.2018
CZ31.10.2018
DK31.10.2018
EE31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
IT31.10.2018
LT31.10.2018
LV31.10.2018
MC31.10.2018
NL31.10.2018
PL31.10.2018
RO31.10.2018
RS31.10.2018
SE31.10.2018
SI31.10.2018
SK31.10.2018
SM31.10.2018
TR31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
PT01.03.2019
IE14.03.2019
MT14.03.2019
BE31.03.2019
CH31.03.2019
LI31.03.2019
Former [2020/29]AL31.10.2018
AT31.10.2018
CZ31.10.2018
DK31.10.2018
EE31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
IT31.10.2018
LT31.10.2018
LV31.10.2018
MC31.10.2018
NL31.10.2018
PL31.10.2018
RO31.10.2018
RS31.10.2018
SE31.10.2018
SI31.10.2018
SK31.10.2018
SM31.10.2018
TR31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
PT01.03.2019
IE14.03.2019
MT14.03.2019
BE31.03.2019
CH31.03.2019
LI31.03.2019
Former [2020/17]AL31.10.2018
AT31.10.2018
CZ31.10.2018
DK31.10.2018
EE31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
IT31.10.2018
LT31.10.2018
LV31.10.2018
MC31.10.2018
NL31.10.2018
PL31.10.2018
RO31.10.2018
RS31.10.2018
SE31.10.2018
SI31.10.2018
SK31.10.2018
SM31.10.2018
TR31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
PT01.03.2019
IE14.03.2019
BE31.03.2019
CH31.03.2019
LI31.03.2019
Former [2020/11]AL31.10.2018
AT31.10.2018
CZ31.10.2018
DK31.10.2018
EE31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
IT31.10.2018
LT31.10.2018
LV31.10.2018
MC31.10.2018
NL31.10.2018
PL31.10.2018
RO31.10.2018
RS31.10.2018
SE31.10.2018
SI31.10.2018
SK31.10.2018
SM31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
PT01.03.2019
IE14.03.2019
BE31.03.2019
CH31.03.2019
LI31.03.2019
Former [2020/09]AL31.10.2018
AT31.10.2018
CZ31.10.2018
DK31.10.2018
EE31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
IT31.10.2018
LT31.10.2018
LV31.10.2018
MC31.10.2018
NL31.10.2018
PL31.10.2018
RO31.10.2018
RS31.10.2018
SE31.10.2018
SI31.10.2018
SK31.10.2018
SM31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
PT01.03.2019
IE14.03.2019
Former [2019/50]AL31.10.2018
AT31.10.2018
CZ31.10.2018
DK31.10.2018
EE31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
IT31.10.2018
LT31.10.2018
LV31.10.2018
MC31.10.2018
NL31.10.2018
PL31.10.2018
RO31.10.2018
RS31.10.2018
SE31.10.2018
SI31.10.2018
SK31.10.2018
SM31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
PT01.03.2019
Former [2019/46]AL31.10.2018
AT31.10.2018
CZ31.10.2018
DK31.10.2018
EE31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
IT31.10.2018
LT31.10.2018
LV31.10.2018
MC31.10.2018
NL31.10.2018
PL31.10.2018
RO31.10.2018
RS31.10.2018
SE31.10.2018
SK31.10.2018
SM31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
PT01.03.2019
Former [2019/40]AL31.10.2018
AT31.10.2018
CZ31.10.2018
DK31.10.2018
EE31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
IT31.10.2018
LT31.10.2018
LV31.10.2018
NL31.10.2018
PL31.10.2018
RO31.10.2018
RS31.10.2018
SE31.10.2018
SK31.10.2018
SM31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
PT01.03.2019
Former [2019/37]AL31.10.2018
AT31.10.2018
CZ31.10.2018
DK31.10.2018
EE31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
IT31.10.2018
LT31.10.2018
LV31.10.2018
NL31.10.2018
PL31.10.2018
RO31.10.2018
RS31.10.2018
SE31.10.2018
SM31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
PT01.03.2019
Former [2019/35]AL31.10.2018
AT31.10.2018
CZ31.10.2018
DK31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
IT31.10.2018
LT31.10.2018
LV31.10.2018
NL31.10.2018
PL31.10.2018
RS31.10.2018
SE31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
PT01.03.2019
Former [2019/34]AL31.10.2018
AT31.10.2018
DK31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
IT31.10.2018
LT31.10.2018
LV31.10.2018
NL31.10.2018
PL31.10.2018
RS31.10.2018
SE31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
PT01.03.2019
Former [2019/26]AL31.10.2018
AT31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
LT31.10.2018
LV31.10.2018
NL31.10.2018
PL31.10.2018
RS31.10.2018
SE31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
PT01.03.2019
Former [2019/25]AT31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
LT31.10.2018
LV31.10.2018
NL31.10.2018
PL31.10.2018
RS31.10.2018
SE31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
Former [2019/24]AT31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
LT31.10.2018
LV31.10.2018
NL31.10.2018
PL31.10.2018
SE31.10.2018
BG31.01.2019
NO31.01.2019
GR01.02.2019
IS28.02.2019
Former [2019/23]AT31.10.2018
ES31.10.2018
FI31.10.2018
HR31.10.2018
LT31.10.2018
LV31.10.2018
NL31.10.2018
PL31.10.2018
BG31.01.2019
NO31.01.2019
IS28.02.2019
Former [2019/22]FI31.10.2018
LT31.10.2018
PL31.10.2018
BG31.01.2019
NO31.01.2019
IS28.02.2019
Former [2019/21]FI31.10.2018
LT31.10.2018
NO31.01.2019
IS28.02.2019
Former [2019/20]LT31.10.2018
NO31.01.2019
Documents cited:Search[A]US2002185655  (FAHIMULLA AYUB M [US], et al) [A] 1-8 * figure 4 and associated text *;
 [A]US2009194790  (SATO YOSHIHIRO [JP], et al) [A] 3,4,8* figure 6 and associated text *;
 [I]KR20120010512  (SAMSUNG ELECTRONICS CO LTD [KR]) [I] 1-8 * figures 5, 6 and associated text *;
 [A]  - SHENG-HOU LIU ET AL, "Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure", CHINESE PHYSICS LETTERS, (201107), vol. 28, no. 7, doi:10.1088/0256-307X/28/7/077202, ISSN 0256-307X, page 077202, XP055171836 [A] 1-8 * figure 1 and associated text *

DOI:   http://dx.doi.org/10.1088/0256-307X/28/7/077202
International search[A]US2005189584  (MATSUDA HAJIME [JP]);
 [A]US2007114567  (MATOCHA KEVIN S [US], et al);
 [A]US2009045438  (INOUE TAKASHI [JP], et al);
 [A]KR20120010512  (SAMSUNG ELECTRONICS CO LTD [KR]);
 [A]US2012217506  (BRIERE MICHAEL A [US])
by applicantKR20120010512
    - T. PALACIOS et al., "Use of Double-Channel Heterostructures to Improve the Access Resistance and Linearity in GaN-Based HEMTs", IEEE Transactions on Electron Devices, (20060300), vol. 53, no. 3, pages 562 - 65
    - R. CHU, "AlGaN-GaN Double-Channel HEMTs", IEEE Transactions on Electron Devices, (20050400), vol. 52, no. 4, doi:doi:10.1109/TED.2005.844791, pages 438 - 46, XP011128325

DOI:   http://dx.doi.org/10.1109/TED.2005.844791
    - S. HEIKMAN et al., "High conductivity modulation doped AlGaN/GaN multiple channel heterostructures", J. of Applied Physics, (20031015), vol. 94, no. 8, doi:doi:10.1063/1.1610244, pages 5321 - 25, XP012060421

DOI:   http://dx.doi.org/10.1063/1.1610244
    - N.H. SHENG et al., "Multiple-Channel GaAs/AlGaAs High Electron Mobility Transistors", IEEE Electron Device Letters, (19850600), vol. EDL-6, no. 6, pages 307 - 10
    - P. SHIV HALASYAMATI et al., "Noncentrosymmetric Oxides", Chem. Mater., (19980000), vol. 10, pages 2753 - 2769
    - D. PARAMANIK et al., "Formation of large-area GaN nanostructures with controlled geometry and morphology using top-down fabrication scheme", Vac. Sci. Technol. B, (20120000), vol. 30, page 052202
The EPO accepts no responsibility for the accuracy of data originating from other authorities; in particular, it does not guarantee that it is complete, up to date or fit for specific purposes.