EP3262684 - THREE-DIMENSIONAL MEMORY DEVICE WITH STRESS COMPENSATION LAYER WITHIN A WORD LINE STACK [Right-click to bookmark this link] | Status | No opposition filed within time limit Status updated on 18.11.2022 Database last updated on 14.06.2024 | |
Former | The patent has been granted Status updated on 10.12.2021 | ||
Former | Grant of patent is intended Status updated on 22.09.2021 | ||
Former | Examination is in progress Status updated on 31.08.2019 | ||
Former | Request for examination was made Status updated on 01.12.2017 | ||
Former | The international publication has been made Status updated on 07.06.2017 | Most recent event Tooltip | 31.05.2024 | Lapse of the patent in a contracting state New state(s): MK | published on 03.07.2024 [2024/27] | Applicant(s) | For all designated states SanDisk Technologies LLC Two Legacy Town Center 6900 North Dallas Parkway Plano, Texas 75024 / US | [2018/01] | Inventor(s) | 01 /
XU, Jiyin c/o SanDisk Corporation 951 SanDisk Drive Milpitas, California 95035 / US | [2018/01] | Representative(s) | Dehns St. Bride's House 10 Salisbury Square London EC4Y 8JD / GB | [2022/02] |
Former [2018/01] | Tothill, John Paul Dehns St Bride's House 10 Salisbury Square London EC4Y 8JD / GB | Application number, filing date | 15808838.5 | 25.11.2015 | [2018/01] | WO2015US62775 | Priority number, date | US201514628741 | 23.02.2015 Original published format: US201514628741 | [2018/01] | Filing language | EN | Procedural language | EN | Publication | Type: | A1 Application with search report | No.: | WO2016137551 | Date: | 01.09.2016 | Language: | EN | [2016/35] | Type: | A1 Application with search report | No.: | EP3262684 | Date: | 03.01.2018 | Language: | EN | The application published by WIPO in one of the EPO official languages on 01.09.2016 takes the place of the publication of the European patent application. | [2018/01] | Type: | B1 Patent specification | No.: | EP3262684 | Date: | 12.01.2022 | Language: | EN | [2022/02] | Search report(s) | International search report - published on: | EP | 01.09.2016 | Classification | IPC: | H01L27/115 | [2018/01] | CPC: |
H10B41/41 (EP,US);
H01L21/76877 (US);
H01L21/02238 (US);
H01L21/76202 (US);
H10B41/27 (EP,US);
H10B41/35 (US);
| Designated contracting states | AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LI, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR [2018/01] | Extension states | BA | Not yet paid | ME | Not yet paid | Validation states | MA | Not yet paid | MD | Not yet paid | Title | German: | DREIDIMENSIONALE SPEICHERVORRICHTUNG MIT SPANNUNGSAUSGLEICHSSCHICHT IN EINEM WORTZEILENSTAPEL | [2018/01] | English: | THREE-DIMENSIONAL MEMORY DEVICE WITH STRESS COMPENSATION LAYER WITHIN A WORD LINE STACK | [2018/01] | French: | DISPOSITIF DE MÉMOIRE EN TROIS DIMENSIONS DOTÉ D'UNE COUCHE DE COMPENSATION DE CONTRAINTE DANS UN EMPILEMENT DE LIGNES DE MOTS | [2018/01] | Entry into regional phase | 07.06.2017 | National basic fee paid | 07.06.2017 | Designation fee(s) paid | 07.06.2017 | Examination fee paid | Examination procedure | 07.06.2017 | Examination requested [2018/01] | 07.06.2017 | Date on which the examining division has become responsible | 09.04.2018 | Amendment by applicant (claims and/or description) | 04.09.2019 | Despatch of a communication from the examining division (Time limit: M04) | 14.01.2020 | Reply to a communication from the examining division | 23.09.2021 | Communication of intention to grant the patent | 02.12.2021 | Fee for grant paid | 02.12.2021 | Fee for publishing/printing paid | 02.12.2021 | Receipt of the translation of the claim(s) | Divisional application(s) | EP20155903.6 / EP3678178 | Opposition(s) | 13.10.2022 | No opposition filed within time limit [2022/51] | Fees paid | Renewal fee | 13.11.2017 | Renewal fee patent year 03 | 14.11.2018 | Renewal fee patent year 04 | 30.09.2019 | Renewal fee patent year 05 | 13.11.2020 | Renewal fee patent year 06 | 10.11.2021 | Renewal fee patent year 07 |
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Responsibility for the accuracy, completeness or quality of the data displayed under the link provided lies entirely with the Unified Patent Court. | Lapses during opposition Tooltip | HU | 25.11.2015 | AL | 12.01.2022 | AT | 12.01.2022 | CY | 12.01.2022 | CZ | 12.01.2022 | DK | 12.01.2022 | EE | 12.01.2022 | ES | 12.01.2022 | FI | 12.01.2022 | HR | 12.01.2022 | IT | 12.01.2022 | LT | 12.01.2022 | LV | 12.01.2022 | MC | 12.01.2022 | MK | 12.01.2022 | NL | 12.01.2022 | PL | 12.01.2022 | RO | 12.01.2022 | RS | 12.01.2022 | SE | 12.01.2022 | SI | 12.01.2022 | SK | 12.01.2022 | SM | 12.01.2022 | BG | 12.04.2022 | NO | 12.04.2022 | GR | 13.04.2022 | IS | 12.05.2022 | PT | 12.05.2022 | [2024/27] |
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Former [2022/30] | NL | 12.01.2022 | Cited in | International search | [Y]US2004124452 (WELLHAUSEN UWE [JP], et al) [Y] 1-17 * paragraphs [0011] - [0023]; figure 3 *; | [Y]US2012208347 (HWANG SUNG-MIN [KR], et al) [Y] 11,25,26* paragraphs [0162] - [0166]; figures 45,46 *; | [XY]US2013017629 (PYO MYUNGJUNG [KR], et al) [X] 18-24,27-31 * paragraphs [0055] - [0175]; figures 20A-20F,21A-21D * [Y] 1-17,25,26 | by applicant | US5915167 | - T. ENDOH, "Novel Ultra High Density Memory With A Stacked-Surrounding Gate Transistor (S-SGT) Structured Cell", IEDM PROC., (2001), pages 33 - 36 |